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IRFP22N60K の電気的特性と機能

IRFP22N60KのメーカーはVishayです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRFP22N60K
部品説明 Power MOSFET ( Transistor )
メーカ Vishay
ロゴ Vishay ロゴ 




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IRFP22N60K Datasheet, IRFP22N60K PDF,ピン配置, 機能
IRFP22N60K, SiHFP22N60K
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
600
VGS = 10 V
150
45
76
Single
0.24
D
TO-247AC
G
S
D
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
FEATURES
• Low Gate Charge Qg Results in Simple Drive
Requirement
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
Available
RoHS*
COMPLIANT
• Fully Characterized Capacitance and Avalanche Voltage
and Current
• Enhanced Body Diode dV/dt Capability
• Compliant to RoHS Directive 2002/95/EC
BENEFITS
• Hard Switching Primary or PFS Switch
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• High Speed Power Switching
• Motor Drive
TO-247AC
IRFP22N60KPbF
SiHFP22N60K-E3
IRFP22N60K
SiHFP22N60K
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
Pulsed Drain Currenta
VGS at 10 V
TC = 25 °C
TC = 100 °C
ID
IDM
Linear Derating Factor
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
EAS
IAR
EAR
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
TC = 25 °C
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting TJ = 25 °C, L = 1.5 mH, Rg = 25 , IAS = 22 A (see fig. 12).
c. ISD 22 A, dI/dt 360 A/μs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
LIMIT
600
± 30
22
14
88
2.9
380
22
37
370
15
- 55 to + 150
300d
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91208
S11-0445-Rev. B, 21-Mar-11
www.vishay.com
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1 Page





IRFP22N60K pdf, ピン配列
IRFP22N60K, SiHFP22N60K
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
VGS
TOP
15V
12V
10V
10 8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
1
0.1
5.0V
0.01
0.001
0.1
20µs PULSE WIDTH
Tj = 25°C
1 10 100
VDS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
100.00
10.00
TJ = 150°C
1.00
TJ = 25°C
0.10
VDS = 50V
20µs PULSE WIDTH
0.01
5.0 6.0 7.0 8.0 9.0 10.0
VGS , Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
100
VGS
TOP 15V
12V
10V
8.0V
7.0V
6.0V
10 5.5V
BOTTOM 5.0V
5.0V
1
0.1
0.1
20µs PULSE WIDTH
Tj = 150°C
1 10 100
VDS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics
3.0
ID = 22A
2.5
2.0
1.5
1.0
0.5
V GS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature (° C)
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91208
S11-0445-Rev. B, 21-Mar-11
www.vishay.com
3
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


3Pages


IRFP22N60K 電子部品, 半導体
IRFP22N60K, SiHFP22N60K
Vishay Siliconix
15 V
VDS
L
Driver
RG
20 V
tp
D.U.T
IAS
0.01Ω
+
- VDD
A
Fig. 12a - Unclamped Inductive Test Circuit
800
600
VDS
tp
IAS
Fig. 12b - Unclamped Inductive Waveforms
TOP
BOTTOM
ID
9.8A
14A
22A
400
200
0
25 50 75 100 125 150
Starting TJ, Junction Temperature
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
10 V
QGS
VG
QG
QGD
Charge
Fig. 13a - Basic Gate Charge Waveform
Current regulator
Same type as D.U.T.
12 V
50 kΩ
0.2 µF
0.3 µF
+
D.U.T. - VDS
VGS
3 mA
IG ID
Current sampling resistors
Fig. 13b - Gate Charge Test Circuit
www.vishay.com
6
Document Number: 91208
S11-0445-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

6 Page



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Link :


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