DataSheet.jp

IRFPS35N50L の電気的特性と機能

IRFPS35N50LのメーカーはVishayです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRFPS35N50L
部品説明 Power MOSFET ( Transistor )
メーカ Vishay
ロゴ Vishay ロゴ 




このページの下部にプレビューとIRFPS35N50Lダウンロード(pdfファイル)リンクがあります。

Total 8 pages

No Preview Available !

IRFPS35N50L Datasheet, IRFPS35N50L PDF,ピン配置, 機能
IRFPS35N50L, SiHFPS35N50L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
500
VGS = 10 V
230
65
110
Single
0.125
D
SUPER-247TM
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
S
D
G
FEATURES
• Super Fast Body Diode Eliminates the Need for
External Diodes in ZVS Applications
Available
• Lower Gate Charge Results in Simpler Drive RoHS*
Requirements
COMPLIANT
• Enhanced dV/dt Capabilities Offer Improved Ruggedness
• Higher Gate Voltage Threshold Offers Improved Noise
Immunity
• Lead (Pb)-free Available
APPLICATIONS
• Zero Voltage Switching SMPS
• Telecom and Server Power Supplies
• Uninterruptible Power Supplies
• Motor Control Applications
SUPER-247TM
IRFPS35N50LPbF
SiHFPS35N50L-E3
IRFPS35N50L
SiHFPS35N50L
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
VGS at 10 V
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
TC = 25 °C
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting TJ = 25 °C, L = 0.97 mH, RG = 25 Ω, IAS = 34 A (see fig. 12).
c. ISD 34 A, dI/dt 765 A/µs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91257
S-81368-Rev. A, 21-Jul-08
LIMIT
500
± 30
34
22
140
3.6
560
34
45
450
15
- 55 to + 150
300d
10
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
www.vishay.com
1

1 Page





IRFPS35N50L pdf, ピン配列
IRFPS35N50L, SiHFPS35N50L
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1000
100
10
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
1000
100
10
1
TJ = 150° C
0.1
0.01
0.001
0.1
4.5V
20µs PULSE WIDTH
Tj = 25°C
1 10 100
VDS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
1
TJ = 25° C
0.1
V DS= 50V
20µs PULSE WIDTH
0.01
4.0 5.0 6.0 7.0 8.0 9.0 10.0
VGS , Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
1000
100
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
10
1 4.5V
0.1
0.1
20µs PULSE WIDTH
TJ= 150 °C
1 10
VDS , Drain-to-Source Voltage (V)
100
Fig. 2 - Typical Output Characteristics
3.0 ID = 34A
2.5
2.0
1.5
1.0
0.5
VGS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91257
S-81368-Rev. A, 21-Jul-08
www.vishay.com
3


3Pages


IRFPS35N50L 電子部品, 半導体
IRFPS35N50L, SiHFPS35N50L
Vishay Siliconix
1200
1000
800
TOP
BOTTOM
ID
15A
22A
34A
600
400
200
0
25 50 75 100 125 150
Starting TJ , Junction Temperature ( °C)
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
100
10us
100us
10
1ms
TC = 25°C
TJ = 150°C
Single Pulse
1
1 10
10ms
100
1000
10000
VDS , Drain-to-Source Voltage (V)
Fig. 12d - Maximum Safe Operating Area
Current regulator
Same type as D.U.T.
12 V
50 kΩ
0.2 µF
0.3 µF
VGS
3 mA
+
D.U.T. - VDS
IG ID
Current sampling resistors
Fig. 13a - Gate Charge Test Circuit
Current regulator
Same type as D.U.T.
12 V
50 kΩ
0.2 µF
0.3 µF
+
D.U.T. - VDS
VGS
3 mA
IG ID
Current sampling resistors
Fig. 13b - Basic Gate Charge Waveform
www.vishay.com
6
Document Number: 91257
S-81368-Rev. A, 21-Jul-08

6 Page



ページ 合計 : 8 ページ
 
PDF
ダウンロード
[ IRFPS35N50L データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
IRFPS35N50L

HEXFET Power MOSFET

International Rectifier
International Rectifier
IRFPS35N50L

Power MOSFET ( Transistor )

Vishay
Vishay
IRFPS35N50LPBF

SMPS MOSFET

International Rectifier
International Rectifier


www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap