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IRLR120 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IRLR120
部品説明 Power MOSFET
メーカ Vishay
ロゴ Vishay ロゴ 



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IRLR120 Datasheet, IRLR120 PDF,ピン配置, 機能
www.vishay.com
IRLR120, IRLU120, SiHLR120, SiHLU120
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
100
VGS = 5.0 V
12
3.0
7.1
Single
0.27
D
DPAK
(TO-252)
D
IPAK
(TO-251)
D
G
GS
GD S
S
N-Channel MOSFET
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Surface Mount (IRLR120, SiHLR120)
• Straight Lead (IRLU120, SiHLU120)
• Available in Tape and Reel
• Logic-Level Gate Drive
• RDS(on) Specified at VGS = 4 V and 5 V
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRLU, SiHLU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface mount applications.
ORDERING INFORMATION
Package
DPAK (TO-252)
Lead (Pb)-free and Halogen-free SiHLR120-GE3
Lead (Pb)-free
IRLR120PbF
SiHLR120-E3
Note
a. See device orientation.
DPAK (TO-252)
SiHLR120TRL-GE3
IRLR120TRLPbFa
SiHLR120TL-E3a
DPAK (TO-252)
SiHLR120TR-GE3
IRLR120TRPbFa
SiHLR120T-E3a
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
Linear Derating Factor (PCB Mount)e
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)e
Peak Diode Recovery dV/dtc
VGS at 5.0 V
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
TC = 25 °C
TA = 25 °C
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d
for 10 s
TJ, Tstg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, starting TJ = 25 °C, L = 5.3 mH, Rg = 25 , IAS = 7.7 A (see fig. 12).
c. ISD 9.2 A, dI/dt 110 A/μs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
DPAK (TO-252)
SiHLR120TRR-GE3
IRLR120TRRPbFa
SiHLR120TR-E3a
LIMIT
100
± 10
7.7
4.9
31
0.33
0.020
210
7.7
4.2
42
2.5
5.5
- 55 to + 150
260
IPAK (TO-251)
SiHLU120-GE3
IRLU120PbF
SiHLU120-E3
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
S13-0167-Rev. D, 04-Feb-13
1
Document Number: 91324
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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