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IRLR110 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IRLR110
部品説明 Power MOSFET
メーカ Vishay
ロゴ Vishay ロゴ 



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IRLR110 Datasheet, IRLR110 PDF,ピン配置, 機能
IRLR110, IRLU110, SiHLR110, SiHLU110
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
100
VGS = 5.0 V
6.1
2.0
3.3
Single
0.54
D
DPAK
(TO-252)
D
IPAK
(TO-251)
D
G
GS
GD S
S
N-Channel MOSFET
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Surface Mount (IRLR110, SiHLR110)
• Straight Lead (IRLU110, SiHLU110)
• Available in Tape and Reel
• Logic-Level Gate Drive
• RDS(on) Specified at VGS = 4 V and 5 V
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRLU, SiHLU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface mount applications.
ORDERING INFORMATION
Package
DPAK (TO-252)
Lead (Pb)-free and Halogen-free
SiHLR110-GE3
Lead (Pb)-free
IRLR110PbF
SiHLR110-E3
SnPb
IRLR110
SiHLR110
Note
a. See device orientation.
DPAK (TO-252)
SiHLR110TR-GE3
IRLR110TRPbFa
SiHLR110T-E3a
IRLR110TRa
SiHLR110Ta
DPAK (TO-252)
SiHLR110TRL-GE3
IRLR110TRLPbF
SiHLR110TL-E3
IRLR110TRLa
SiHLR110TLa
IPAK (TO-251)
SiHLU110-GE3
IRLU110PbF
SiHLU110-E3
IRLU110
SiHLU110
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
Linear Derating Factor (PCB Mount)e
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)e
Peak Diode Recovery dV/dtc
VGS at 5.0 V
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
TC = 25 °C
TA = 25 °C
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, starting TJ = 25 °C, L = 8.1 mH, Rg = 25 Ω, IAS = 4.3 A (see fig. 12).
c. ISD 5.6 A, dI/dt 140 A/μs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
LIMIT
100
± 10
4.3
2.7
17
0.20
0.020
100
4.3
2.5
25
2.5
5.5
- 55 to + 150
260d
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91323
S10-1139-Rev. C, 17-May-10
www.vishay.com
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