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IRLR8103 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IRLR8103
部品説明 HEXFET Chipset for DC-DC Converters
メーカ International Rectifier
ロゴ International Rectifier ロゴ 



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IRLR8103 Datasheet, IRLR8103 PDF,ピン配置, 機能
PD - 93838
IRLR8103/IRLRP8D -59308339
IRLR8103/IRLR8503
Provisional Data Sheet
• N-Channel Application-Specific MOSFETs
• Ideal for CPU Core DC-DC Converters
• Low Conduction Losses
• Low Switching Losses
• Minimizes Parallel MOSFETs for high current
applications
HEXFET® Chipset for DC-DC Converters
D
Description
These new devices employ advanced HEXFET® power
MOSFET technology to achieve an unprecedented balance
of on-resistance and gate charge.The reduced conduction
and switching losses make them ideal for high efficiency
DC-DC converters that power the latest generation of
microprocessors.
G
S D-Pak
Both the IRLR8103 and IRLR8503 have been optimized
and are 100% tested for all parameters that are critical in
synchronous buck converters including RDS(on), gate charge
and Cdv/dt-induced turn-on immunity.The IRLR8103 offers
particulary low RDS(on) and high Cdv/dt immunity for
synchronous FET applications. The IRLR8503 offers an
extremely low combination of Qsw & RDS(on) for reduced
losses in control FET applications.
The package is designed for vapor phase, infrared,
convection, or wave soldering techniques. Power
dissipation of greater than 80W is possible in a typical PCB
mount application.
DEVICE RATINGS (typ.)
VDS
RDS(on)
QG
Qsw
Q
oss
IRLR8103
30V
6 m
45 nC
20.3 nC
23 nC
IRLR8503
30V
12 m
15 nC
5.4 nC
23 nC
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain or Source
Current (VGS 10V)
Pulsed Drain Current
TA = 25°C
TL = 90°C
Power Dissipation
TA = 25°C
T = 90°C
L
Junction & Storage Temperature Range
Continuous Source Current (Body Diode)
Pulsed Source Current
Symbol
VDS
VGS
ID
IDM
PD
T ,T
J STG
I
S
ISM
IRLR8103
IRLR8503
30
±20
89…
49…
61…
34…
350 196
89 62
42 30
–55 to 150
89…
49…
350 196
Units
V
A
W
°C
A
Thermal Resistance
Parameter
Maximum Junction-to-Ambient PCBƒ
Maximum Junction-to-Case
www.irf.com
RθJA
RθJC
Revised 1/13/00
Max.
50
1.4
2.0
Units
°C/W
°C/W
1

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