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PDF IRF644NL Data sheet ( Hoja de datos )
| Número de pieza | IRF644NL | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | Vishay | |
| Logotipo |  |
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IRF644N, IRF644NS, IRF644NL, SiHF644N, SiHF644NS, SiHF644NL
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
250 V
RDS(on) (Ω)
VGS = 10 V
Qg (Max.) (nC)
54
Qgs (nC)
9.2
Qgd (nC)
26
Configuration
Single
0.240
I2PAK (TO-262)
TO-220
D
S
D
G
D2PAK (TO-263)
S
D
G
G
GD
S
S
N-Channel MOSFET
FEATURES
• Advanced Process Technology
• Dynamic dV/dt Rating
• 175 °C Operating Temperature
• Fast Switching
• Fully Avalanche Rated
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
DESCRIPTION
Fifth generation Power MOSFETs from Vishay utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
Power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a
wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
The D2PAK is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on
resistance in any existing surface mount package. The
D2PAK is suitable for high current applications because of its
low internal connection resistance and can dissipate up to
2.0 W in a typical surface mount application.
ORDERING INFORMATION
Package
TO-220
D2PAK (TO-263)
Lead (Pb)-free
IRF644NPbF
SiHF644N-E3
IRF644NSPbF
SiHF644NS-E3
SnPb
IRF644N
SiHF644N
Note
a. See device orientation.
IRF644NS
SiHF644NS
D2PAK (TO-263)
IRF644NSTRLPbFa
SiHF644NSTL-E3a
IRF644NSTRLa
SiHF644NSTLa
D2PAK (TO-263)
IRF644NSTRRPbFa
SiHF644NSTR-E3a
IRF644NSTRRa
SiHF644NSTRa
I2PAK (TO-262)
IRF644NLPbF
SiHF644NL-E3
IRF644NL
SiHF644NL
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91038
S-83000-Rev. A, 19-Jan-09
www.vishay.com
1
1 page  
IRF644N, IRF644NS, IRF644NL, SiHF644N, SiHF644NS, SiHF644NL
Vishay Siliconix
102
TJ = 175 °C
10
TJ = 25 °C
1
0.1
0.0
91038_07
VGS = 0 V
0.4 0.8 1.2 1.6
VSD, Source-to-Drain Voltage (V)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
103
Operation in this area limited
by RDS(on)
102
10
1
0.1
1
91038_08
100 µs
1 ms
TC = 25 °C
TJ = 175 °C
Single Pulse
10 ms
10 102 103
VDS, Drain-to-Source Voltage (V)
Fig. 8 - Maximum Safe Operating Area
15
12
9
6
3
0
25
91038_09
50 75 100 125 150
TC, Case Temperature (°C)
175
Fig. 9 - Maximum Drain Current vs. Case Temperature
VDS
VGS
RG
RD
D.U.T.
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
+- VDD
Fig. 10a - Switching Time Test Circuit
VDS
90 %
10 %
VGS
td(on) tr
td(off) tf
Fig. 10b - Switching Time Waveforms
Document Number: 91038
S-83000-Rev. A, 19-Jan-09
www.vishay.com
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRF644NL.PDF ] | |
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