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IRLZ34SのメーカーはVishayです、この部品の機能は「Power MOSFET ( Transistor )」です。 |
部品番号 | IRLZ34S |
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部品説明 | Power MOSFET ( Transistor ) | ||
メーカ | Vishay | ||
ロゴ | |||
このページの下部にプレビューとIRLZ34Sダウンロード(pdfファイル)リンクがあります。 Total 8 pages
IRLZ34S, IRLZ34L, SiHLZ34S, SiHLZ34L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
Qg (Max.) (nC)
60
VGS = 5 V
35
Qgs (nC)
7.1
Qgd (nC)
25
Configuration
Single
0.05
I2PAK (TO-262)
D2PAK (TO-263)
D
G
DS
G
D
S
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb) free and Halogen-free
Lead (Pb) free
D2PAK (TO-263)
SiHLZ34S-GE3
-
-
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• Advanced Process Technology
• Surface Mount (IRLZ34S, SiHLZ34S)
• Low-Profile Through-Hole (IRLZ34L, SiHLZ34L)
• 175 °C Operating Temperature
• Fast Switching
• Fully Avalanche Rated
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast swichting speed and ruggedized device design that
Power MOSFETs are known for, provides the designer with
an extremely efficient and reliable device for use in a wide
variety of applications.
The D2PAK is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D2PAK is suitable for high current applications because of
its low internal connection resistance and can dissipate up
to 2.0 W in a typical surface mount application.
The through-hole version (IRLZ34L, SiHLZ34L) is available
for low-profile applications.
I2PAK (TO-262)
-
IRLZ34LPbF
SiHLZ34L-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
Single Pulse Avalanche Energyb
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)e
Peak Diode Recovery dV/dtc
VGS at 5 V
TC = 25 °C
TC = 100 °C
TC = 25 °C
TA = 25 °C
VDS
VGS
ID
IDM
EAS
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, Starting TJ = 25 °C, L = 285 μH, Rg = 25 , IAS = 30 A (see fig. 12).
c. ISD 30 A, dI/dt 200 A/μs, VDD VDS, TJ 175 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
LIMIT
60
± 10
30
21
110
0.59
128
88
3.7
4.5
- 55 to + 175
300d
UNIT
V
A
W/°C
mJ
W
V/ns
°C
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 90418
S11-1044-Rev. D, 30-May-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 Page IRLZ34S, IRLZ34L, SiHLZ34S, SiHLZ34L
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Fig. 1 - Typical Output Characteristics, TC = 25 °C
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics, TC = 175 °C
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 90418
S11-1044-Rev. D, 30-May-11
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
3Pages IRLZ34S, IRLZ34L, SiHLZ34S, SiHLZ34L
Vishay Siliconix
VDS
Vary tp to obtain
required IAS
Rg
5V
tp
L
D.U.T.
IAS
0.01 W
+
- V DD
Fig. 12a - Unclamped Inductive Test Circuit
VDS
VDS
tp
VDD
IAS
Fig. 12b - Unclamped Inductive Waveforms
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
5V
QGS
VG
QG
QGD
Charge
Fig. 13a - Basic Gate Charge Waveform
Current regulator
Same type as D.U.T.
12 V
50 kΩ
0.2 µF
0.3 µF
+
D.U.T. - VDS
VGS
3 mA
IG ID
Current sampling resistors
Fig. 13b - Gate Charge Test Circuit
www.vishay.com
6
Document Number: 90418
S11-1044-Rev. D, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
6 Page | |||
ページ | 合計 : 8 ページ | ||
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部品番号 | 部品説明 | メーカ |
IRLZ34 | HEXFET POWER MOSFET | International Rectifier |
IRLZ34 | Power MOSFET ( Transistor ) | Vishay |
IRLZ34L | HEXFET Power MOSFET | International Rectifier |
IRLZ34L | Power MOSFET ( Transistor ) | Vishay |