DataSheet.jp

IRFZ48L PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IRFZ48L
部品説明 Power MOSFET
メーカ Vishay
ロゴ Vishay ロゴ 



Total 9 pages
		

No Preview Available !

IRFZ48L Datasheet, IRFZ48L PDF,ピン配置, 機能
www.vishay.com
IRFZ48S, IRFZ48L, SiHFZ48S, SiHFZ48L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
60
VGS = 10 V
110
29
36
Single
0.018
D
I2PAK (TO-262)
D2PAK (TO-263)
FEATURES
• Advanced process technology
• Surface mount (IRFZ48S, SiHFZ48S)
• Low-profile through-hole (IRFZ48L, SiHFZ48L)
• 175 °C operating temperature
Available
• Fast switching
• Material categorization: for definitions of
compliance
please
see
www.vishay.com/doc?99912
Available
Note
* This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non-RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details.
G
DS
G
D
S
G
S
N-Channel MOSFET
DESCRIPTION
Third generation power MOSFETs from Vishay utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
Power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a
wide variety of applications.
The D2PAK is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D2PAK is suitable for high current applications because of
its low internal connection resistance and can dissipate up
to 2 W in a typical surface mount application.
The through-hole version (IRFZ48L, SiHFZ48L) is available
for low-profile applications.
ORDERING INFORMATION
Package
Lead (Pb)-free and halogen-free
Lead (Pb)-free
Note
a. See device orientation.
D2PAK (TO-263)
SiHFZ48S-GE3
IRFZ48SPbF
I2PAK (TO-262)
SiHFZ48L-GE3
-
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current f
Pulsed Drain Current a, e
VGS at 10 V
TC = 25 °C
TC = 100 °C
ID
IDM
Linear Derating Factor
Single Pulse Avalanche Energy b, e
EAS
Maximum Power Dissipation
Peak Diode Recovery dV/dt c, e
TC = 25 °C
TA = 25 °C
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak temperature) d
for 10 s
TJ, Tstg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, Starting TJ = 25 °C, L = 22 μH, Rg = 25 , IAS = 72 A (see fig. 12).
c. ISD 72 A, dI/dt 200 A/μs, VDD VDS, TJ 175 °C.
d. 1.6 mm from case.
e. Uses IRFZ48, SiHFZ48 data and test conditions.
f. Calculated continuous current based on maximum allowable junction temperature.
LIMIT
60
± 20
50
50
290
1.3
100
190
3.7
4.5
-55 to +175
300
UNIT
V
A
W/°C
mJ
W
V/ns
°C
S15-1659-Rev. D, 20-Jul-15
1
Document Number: 90377
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1 Page





ページ 合計 : 9 ページ
PDF
ダウンロード
[ IRFZ48L.PDF ]

共有リンク

Link :

おすすめデータシート

部品番号部品説明メーカ
IRFZ48

Power MOSFET

Vishay
Vishay
IRFZ48L

Power MOSFET

Vishay
Vishay
IRFZ48N

N-channel enhancement mode TrenchMOS transistor

NXP
NXP
IRFZ48N

Power MOSFET

International Rectifier
International Rectifier

www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap