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IRF9530 の電気的特性と機能

IRF9530のメーカーはVishayです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRF9530
部品説明 Power MOSFET ( Transistor )
メーカ Vishay
ロゴ Vishay ロゴ 




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IRF9530 Datasheet, IRF9530 PDF,ピン配置, 機能
Power MOSFET
IRF9530, SiHF9530
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
- 100
VGS = - 10 V
38
6.8
21
Single
0.30
TO-220AB
S
G
S
D
G
D
P-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• P-Channel
• 175 °C Operating Temperature
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
Available
RoHS*
COMPLIANT
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.
TO-220AB
IRF9530PbF
SiHF9530-E3
IRF9530
SiHF9530
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
VGS at - 10 V
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
TC = 25 °C
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = - 25 V, starting TJ = 25 °C, L = 4.2 mH, Rg = 25 , IAS = - 12 A (see fig. 12).
c. ISD - 12 A, dI/dt 140 A/μs, VDD VDS, TJ 175 °C.
d. 1.6 mm from case.
LIMIT
- 100
± 20
- 12
- 8.2
- 48
0.59
400
- 12
8.8
88
- 5.5
- 55 to + 175
300d
10
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91076
S11-0512-Rev. B, 21-Mar-11
www.vishay.com
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1 Page





IRF9530 pdf, ピン配列
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
IRF9530, SiHF9530
Vishay Siliconix
VGS
Top - 15 V
- 10 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
101 - 5.0 V
Bottom - 4.5 V
- 4.5 V
100
10-1
91076_01
20 µs Pulse Width
TC = 25 °C
100 101
- VDS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics, TC = 25 °C
25 °C
101 175 °C
100
4
91076_03
20 µs Pulse Width
VDS = - 50 V
5 6 7 8 9 10
- VGS, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
VGS
Top - 15 V
- 10 V
- 8.0 V
- 7.0 V
- 6.0 V
101 - 5.5 V
- 5.0 V
Bottom - 4.5 V
- 4.5 V
100
10-1
91076_02
20 µs Pulse Width
TC = 175 °C
100 101
- VDS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics, TC = 175 °C
3.0
ID = - 12 A
VGS = - 10 V
2.5
2.0
1.5
1.0
0.5
0.0
- 60- 40 - 20 0 20 40 60 80 100 120 140 160 180
91076_04
TJ, Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91076
S11-0512-Rev. B, 21-Mar-11
www.vishay.com
3
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


3Pages


IRF9530 電子部品, 半導体
IRF9530, SiHF9530
Vishay Siliconix
VDS
Vary tp to obtain
required IAS
RG
- 10 V
tp
L
D.U.T
IAS
0.01 Ω
-
+
V
DD
A
Fig. 12a - Unclamped Inductive Test Circuit
IAS
VDS
VDD
tp
VDS
Fig. 12b - Unclamped Inductive Waveforms
1200
1000
800
ID
Top - 4.9 A
- 8.5 A
Bottom - 12 A
600
400
200
0 VDD = - 25 V
25 50 75
100 125 150 175
91076_12c
Starting TJ, Junction Temperature (°C)
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
- 10 V
QGS
VG
QG
QGD
Charge
Fig. 13a - Basic Gate Charge Waveform
Current regulator
Same type as D.U.T.
12 V
50 kΩ
0.2 µF
0.3 µF
-
D.U.T. + VDS
VGS
- 3 mA
IG ID
Current sampling resistors
Fig. 13b - Gate Charge Test Circuit
www.vishay.com
6
Document Number: 91076
S11-0512-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

6 Page



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