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IRFBE20のメーカーはVishayです、この部品の機能は「Power MOSFET ( Transistor )」です。 |
部品番号 | IRFBE20 |
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部品説明 | Power MOSFET ( Transistor ) | ||
メーカ | Vishay | ||
ロゴ | |||
このページの下部にプレビューとIRFBE20ダウンロード(pdfファイル)リンクがあります。 Total 8 pages
Power MOSFET
IRFBE20, SiHFBE20
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
800
VGS = 10 V
38
5.0
21
Single
6.5
D
TO-220
G
S
D
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
TO-220
IRFBE20PbF
SiHFBE20-E3
IRFBE20
SiHFBE20
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
Pulsed Drain Currenta
VGS at 10 V
TC = 25 °C
TC = 100 °C
ID
IDM
Linear Derating Factor
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
TC = 25 °C
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
TJ, Tstg
Soldering Recommendations (Peak Temperature)
for 10 s
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 104 mH, RG = 25 Ω, IAS = 1.8 A (see fig. 12).
c. ISD ≤ 1.8 A, dI/dt ≤ 80 A/µs, VDD ≤ 600, TJ ≤ 150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91117
S-81262-Rev. A, 07-Jul-08
LIMIT
800
± 20
1.8
1.2
7.2
0.43
180
1.8
5.4
54
2.0
- 55 to + 150
300d
10
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
www.vishay.com
1
1 Page TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
IRFBE20, SiHFBE20
Vishay Siliconix
Fig. 1 - Typical Output Characteristics, TC = 25 °C
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics, TC = 150 °C
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91117
S-81262-Rev. A, 07-Jul-08
www.vishay.com
3
3Pages IRFBE20, SiHFBE20
Vishay Siliconix
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
10 V
QGS
VG
QG
QGD
Charge
Fig. 13a - Basic Gate Charge Waveform
Current regulator
Same type as D.U.T.
12 V
50 kΩ
0.2 µF
0.3 µF
+
D.U.T. - VDS
VGS
3 mA
IG ID
Current sampling resistors
Fig. 13b - Gate Charge Test Circuit
www.vishay.com
6
Document Number: 91117
S-81262-Rev. A, 07-Jul-08
6 Page | |||
ページ | 合計 : 8 ページ | ||
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PDF ダウンロード | [ IRFBE20 データシート.PDF ] |
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部品番号 | 部品説明 | メーカ |
IRFBE20 | Power MOSFET(Vdss=800V/ Rds(on)=6.5ohm/ Id=1.8A) | International Rectifier |
IRFBE20 | Power MOSFET ( Transistor ) | Vishay |