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PDF IRF734 Data sheet ( Hoja de datos )
| Número de pieza | IRF734 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | Vishay | |
| Logotipo |  |
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Power MOSFET
IRF734, SiHF734
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
450
VGS = 10 V
45
6.6
24
Single
1.2
TO-220
D
G
S
D
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free
RoHS
COMPLIANT
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
TO-220
IRF734PbF
SiHF734-E3
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
Pulsed Drain Currenta
VGS at 10 V
TC = 25 °C
TC = 100 °C
ID
IDM
Linear Derating Factor
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
EAS
IAR
EAR
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
TC = 25 °C
PD
dV/dt
Operating Junction and Storage Temperature Range
TJ, Tstg
Soldering Recommendations (Peak Temperature)
for 10 s
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 24 mH, RG = 25 Ω, IAS = 4.9 A (see fig. 12).
c. ISD ≤ 4.9 A, dI/dt ≤ 80 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.
d. 1.6 mm from case.
LIMIT
450
± 20
4.9
3.1
20
0.59
330
4.9
7.4
74
4.0
- 55 to + 150
300d
10
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
Document Number: 91049
S-82998-Rev. A, 12-Jan-08
www.vishay.com
1
1 page  
5.0
4.0
3.0
2.0
1.0
0.0
25
91049_09
50 75 100 125
TC, Case Temperature (°C)
150
Fig. 9 - Maximum Drain Current vs. Case Temperature
IRF734, SiHF734
Vishay Siliconix
VDS
VGS
RG
RD
D.U.T.
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
+- VDD
Fig. 10a - Switching Time Test Circuit
VDS
90 %
10 %
VGS
td(on) tr
td(off) tf
Fig. 10b - Switching Time Waveforms
10
1 0 − 0.5
0.2
0.1
0.1 0.05
0.02
0.01
10-2
10-5
91049_11
Single Pulse
(Thermal Response)
10-4
10-3
10-2
0.1
t1, Rectangular Pulse Duration (s)
PDM
t1
t2
Notes:
1. Duty Factor, D = t1/t2
2. Peak Tj = PDM x ZthJC + TC
1 10
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
VDS
Vary tp to obtain
required IAS
RG
10 V
tp
L
D.U.T.
IAS
0.01 Ω
+
- VDD
Fig. 12a - Unclamped Inductive Test Circuit
Document Number: 91049
S-82998-Rev. A, 12-Jan-08
VDS
VDS
tp
VDD
IAS
Fig. 12b - Unclamped Inductive Waveforms
www.vishay.com
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRF734.PDF ] | |
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