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IRFZ44S PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IRFZ44S
部品説明 Power MOSFET
メーカ Vishay
ロゴ Vishay ロゴ 



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IRFZ44S Datasheet, IRFZ44S PDF,ピン配置, 機能
IRFZ44S, IRFZ44L, SiHFZ44S, SiHFZ44L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
Qg (Max.) (nC)
60
VGS = 10 V
67
Qgs (nC)
18
Qgd (nC)
25
Configuration
Single
0.028
I2PAK (TO-262)
D2PAK (TO-263)
D
G
SD
D
G
S
G
S
N-Channel MOSFET
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• Advanced Process Technology
• Surface Mount (IRFZ44S, SiHFZ44S)
• Low-Profile Through-Hole (IRFZ44L, SiHFZ44L)
• 175 °C Operating Temperature
• Fast Switching
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay utilize
advanced processing techniques to achieve extermely low
on resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
power MOSFETs are well known for, provides the designer
with an extermely efficient reliabel deviece for use in a wide
variety of applications.
The D2PAK is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and lowest possible on-resistance
in any existing surface mount package. The D2PAK is
suitable for high current applications because of its low
internal connection resistance and can dissipate up to 2.0 W
in a typical surface mount application.
The through-hole version (IRFZ44L, SiHFZ44L) is available
for low profile applications.
ORDERING INFORMATION
Package
D2PAK (TO-263)
Lead (Pb)-free and Halogen-free
SiHFZ44S-GE3
Lead (Pb)-free
Note
IRFZ44SPbF
SiHFZ44S-E3
a. See device orientation.
D2PAK (TO-263)
SiHFZ44STRR-GE3a
IRFZ44STRRPbFa
SiHFZ44STR-E3a
D2PAK (TO-263)
SiHFZ44STRL-GE3a
IRFZ44STRLPbFa
SiHFZ44STL-E3a
I2PAK (TO-262)
-
IRFZ44LPbF
SiHFZ44L-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltagef
Gate-Source Voltagef
Continuous Drain Currente
Continuous Drain Current
Pulsed Drain Currenta, e
Linear Derating Factor
VGS at 10 V
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
Single Pulse Avalanche Energyb
Maximum Power Dissipation
Peak Diode Recovery dV/dtc, f
TA = 25 °C
TC = 25 °C
EAS
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperatured)
for 10 s
TJ, Tstg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V; starting TJ = 25 °C, L = 44 μH, Rg = 25 , IAS = 51 A (see fig. 12).
c. ISD 51 A, dI/dt 250 A/μs, VDD VDS, TJ 175 °C.
d. 1.6 mm from case.
e. Calculated continuous current based on maximum allowable junction temperature.
f. Uses IRFZ44, SiHFZ44 data and test conditions.
LIMIT
60
± 20
50
36
200
1.0
100
3.7
150
4.5
- 55 to + 175
300
UNIT
V
A
W/°C
mJ
W
V/ns
°C
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91293
S11-1063-Rev. C, 30-May-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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