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IRF9620S の電気的特性と機能

IRF9620SのメーカーはVishayです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRF9620S
部品説明 Power MOSFET ( Transistor )
メーカ Vishay
ロゴ Vishay ロゴ 




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IRF9620S Datasheet, IRF9620S PDF,ピン配置, 機能
Power MOSFET
IRF9620S, SiHF9620S
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
Qg (Max.) (nC)
- 200
VGS = - 10 V
22
Qgs (nC)
12
Qgd (nC)
10
Configuration
Single
S
1.5
D2PAK (TO-263)
G
GD
S
D
P-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
Note
a. See device orientation.
D2PAK (TO-263)
SiHF9620S-GE3
IRF9620SPbF
SiHF9620S-E3
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• Surface Mount
• Available in Tape and Reel
• Dynamic dV/dt Rating
• P-Channel
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
The Power MOSFETs technology is the key to Vishay’s
advanced line of Power MOSFET transistors. The efficient
geometry and unique processing of the Power MOSFETs
design achieve very low on-state resistance combined with
high transconductance and extreme device ruggedness.
The D2PAK (TO-263) is a surface mount power package
capable of accommodating die sizes up to HEX-4. It
provides the highest power capability and the lowest
possible on-resistance in any existing surface mount
package. The D2PAK (TO-263) is suitable for high current
applications because of its low internal connection
resistance and can dissipate up to 2.0 W in a typical surface
mount application.
D2PAK (TO-263)
SiHF9620STRL-GE3a
IRF9620STRLPbFa
SiHF9620STL-E3a
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
VGS at - 10 V
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
Linear Derating Factor (PCB Mount)e
Inductive Current, Clamp
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)e
Peak Diode Recovery dV/dtc
TC = 25 °C
TA = 25 °C
ILM
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 5).
b. Not Applicable
c. ISD - 3.5 A, dI/dt 95 A/μs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
e. When mounted on 1” square PCB (FR-4 or G-10 material).
LIMIT
- 200
± 20
- 3.5
- 2.0
- 14
0.32
0.025
- 14
40
3.0
- 5.0
- 55 to + 150
300d
UNIT
V
A
W/°C
A
W
V/ns
°C
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91083
S11-1051-Rev. C, 30-May-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1 Page





IRF9620S pdf, ピン配列
IRF9620S, SiHF9620S
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
-5
VGS = - 10, - 9, - 8, - 7 V
-4
-6V
-3
-2
-1
0
0
-5V
-4V
- 10
- 20
80 µs Pulse Test
- 30 - 40 - 50
91083_01
VDS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
-5
80 µs Pulse Test
-4
VGS = - 10, - 9, - 8, - 7 V
-3 -6V
-2
-5V
-1
-4V
0
0 -1 -2 -3 -4 -5
91083_03
VDS, Drain-to-Source Voltage (V)
Fig. 3 - Typical Saturation Characteristics
-5
TJ = - 55 °C
- 4 TJ = 25 °C
- 3 TJ = 125 °C
-2
-1
0
0
80 µs Pulse Test
VDS > ID(on) x RDS(on) max.
- 2 - 4 - 6 - 8 - 10
91083_02
VGS, Gate-to-Source Voltage (V)
Fig. 2 - Typical Transfer Characteristics
102
Operation in this area limited
5 by RDS(on)
2
10
100 µs
5
2
1
5
2
0.1
1
2
1 ms
10 ms
TC = 25 °C
TJ = 150 °C
Single Pulse
5 10 2
5 102 2
5 103
91083_04
Negative VDS, Drain-to-Source Voltage (V)
Fig. 4 - Maximum Safe Operating Area
2.0
1.0
0.5 D = 0.5
0.2 0.2
0.1
0.1
0.05
0.05 0.02
0.01
0.02
0.01
10-5
2
Single Pulse (Transient
Thermal Impedence)
5 10-4 2
5 10-3 2
5 10-2 2
PDM
t1
t2
Notes:
1. Duty Factor, D = t1/t2
2. Per Unit Base = RthJC = 3.12 °C/W
3. TJM - TC = PDM ZthJC(t)
5 0.1 2
5 1.0 2
5 10
91083_05
t1, Square Wave Pulse Duration (s)
Fig. 5 - Maximum Effective Transient Thermal Impedance, Junction-to-Case vs. Pulse Duration
Document Number: 91083
S11-1051-Rev. C, 30-May-11
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


3Pages


IRF9620S 電子部品, 半導体
IRF9620S, SiHF9620S
Vishay Siliconix
- 10 V
QGS
VG
QG
QGD
Charge
Fig. 18a - Basic Gate Charge Waveform
Current regulator
Same type as D.U.T.
12 V
50 kΩ
0.2 µF
0.3 µF
-
D.U.T. + VDS
VGS
- 3 mA
IG ID
Current sampling resistors
Fig. 18b - Gate Charge Test Circuit
D.U.T.
+
Peak Diode Recovery dV/dt Test Circuit
+
Circuit layout considerations
Low stray inductance
Ground plane
Low leakage inductance
current transformer
-
- -+
Rg
dV/dt controlled by Rg
+
ISD controlled by duty factor “D”
D.U.T. - device under test
- VDD
Note
Compliment N-Channel of D.U.T. for driver
Driver gate drive
P.W.
Period
D=
P.W.
Period
VGS = - 10 Va
D.U.T. lSD waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
Re-applied
voltage
Body diode forward drop
Inductor current
VDD
Ripple 5 %
ISD
Note
a. VGS = - 5 V for logic level and - 3 V drive devices
Fig. 19 - For P-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91083.
www.vishay.com
6
Document Number: 91083
S11-1051-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

6 Page



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