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PDF IRF9610S Data sheet ( Hoja de datos )
| Número de pieza | IRF9610S | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | Vishay | |
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IRF9610S, SiHF9610S
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
- 200
VGS = - 10 V
Qg (Max.) (nC)
11
Qgs (nC)
Qgd (nC)
7
4
Configuration
Single
D2PAK (TO-263)
S
3
G
GD
S
D
P-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
FEATURES
• Surface Mount
• Available in Tape and Reel
• Dynamic dV/dt Rating
• P-Channel
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Material categorization: For definitions of
compliance please see www.vishay.com/doc?99912
Note
* Lead (Pb)-containing terminations are not RoHS-compliant.
Exemptions may apply.
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The D2PAK (TO-263) is a surface mount power package
capable of accommodating die sizes up to HEX-4. It
provides the highest power capability and the lowest
possible on-resistance in any existing surface mount
package. The D2PAK (TO-263) is suitable for high current
applications because of its low internal connection
resistance and can dissipate up to 2 W in a typical surface
mount application.
D2PAK (TO-263)
SiHF9610S-GE3
SiHF9610STRR-GE3
SiHF9610STRL-GE3
IRF9610SPbF
SiHF9610S-E3
IRF9610STRRPbF
IRF9610STRLPbF
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
VGS at - 10 V
TC = 25 °C
TC = 100 °C
Linear Derating Factor
Linear Derating Factor (PCB Mount)d
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)d
Peak Diode Recovery dV/dtb
TC = 25 °C
TA = 25 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
VDS
VGS
ID
IDM
PD
dV/dt
TJ, Tstg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 5).
b. ISD - 1.8 A, dI/dt 70 A/μs, VDD VDS, TJ 150 °C.
c. 1.6 mm from case.
d. When mounted on 1" square PCB (FR-4 or G-10 material).
LIMIT
- 200
± 20
- 1.8
-1
-7
0.16
0.025
20
3
-5
- 55 to + 150
300c
UNIT
V
A
W/°C
W
V/ns
°C
S12-1558-Rev. D, 02-Jul-12
1
Document Number: 91081
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
www.vishay.com
IRF9610S, SiHF9610S
Vishay Siliconix
7
RDS(on) measured with current pulse of
6
2.0 µs duration. Initial TJ = 25 °C.
(Heating effect of 2.0 µs pulse is minimal.)
5
VGS = - 10 V
4
3
VGS = - 20 V
2
1
0
0
91081_12
-1 -2 -3 -4 -5 -6 -7
ID, Drain Current (A)
Fig. 12 - Typical On-Resistance vs. Drain Current
2.0
1.6
1.2
0.8
0.4
0.0
25 50 75 100 125 150
91081_13
TC, Case Temperature (°C)
Fig. 13 - Maximum Drain Current vs. Case Temperature
20
15
10
5
0
0 20 40 60 80 100 120 140
91081_14
TC, Case Temperature (°C)
Fig. 14 - Power vs. Temperature Derating Curve
L
Vary tp to obtain
required IL
VDS
VDD
VGS = - 10 V tp
D.U.T.
EC
IL
VDD = 0.5 VDS
0.05 Ω
EC = 0.75 VDS
-
+
Fig. 15 - Clamped Inductive Test Circuit
VDD
IL
tp VDS
EC
Fig. 16 - Clamped Inductive Waveforms
S12-1558-Rev. D, 02-Jul-12
5
Document Number: 91081
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet IRF9610S.PDF ] | |
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