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PDF IRF840L Data sheet ( Hoja de datos )
| Número de pieza | IRF840L | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | Vishay | |
| Logotipo |  |
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Power MOSFET
IRF840L, SiHF840L
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
500
VGS = 10 V
63
9.3
32
Single
0.85
I2PAK
(TO-262)
D
G
S
D
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The I2PAK (TO-262) is a power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and lowest possible on-resistance.
The I2PAK (TO-262) is suitable for high current applications
because of its low internal connection resistance and can
dissipate up to 2.0 W.
I2PAK (TO-262)
SiHF840L-GE3
IRF840LPbF
SiHF840L-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
Pulsed Drain Currenta
VGS at 10 V
TC = 25 °C
TC = 100 °C
ID
IDM
Linear Derating Factor
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
EAS
IAR
EAR
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
TC = 25 °C
TC = 100 °C
PD
dV/dt
Operating Junction and Storage Temperature Range
TJ, Tstg
Soldering Recommendations (Peak Temperature)
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 14 mH, Rg = 25 , IAS = 8.0 A (see fig. 12).
c. ISD 8.0 A, dI/dt 100 A/μs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
LIMIT
500
± 20
8.0
5.1
32
1.0
510
8.0
13
125
50
3.5
- 55 to + 150
300d
UNIT
V
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91069
S10-2554-Rev. B, 08-Nov-10
www.vishay.com
1
1 page  
IRF840L, SiHF840L
Vishay Siliconix
8.0
6.0
4.0
2.0
0.0
25
91069_09
50 75 100 125
TC, Case Temperature (°C)
150
Fig. 9 - Maximum Drain Current vs. Case Temperature
VDS
VGS
Rg
RD
D.U.T.
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
+- VDD
Fig. 10a - Switching Time Test Circuit
VDS
90 %
10 %
VGS
td(on) tr
td(off) tf
Fig. 10b - Switching Time Waveforms
10
1
D = 0.5
0.2
0.1 0.1
0.05
0.02
0.01
10-2
10-3
10-5
91069_11
Single Pulse
(Thermal Response)
10-4
10-3
10-2
0.1
t1, Rectangular Pulse Duration (S)
PDM
t1
t2
Notes:
1. Duty Factor, D = t1/t2
2. Peak Tj = PDM x ZthJC + TC
1 10 102
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
VDS
Vary tp to obtain
required IAS
Rg
10 V
tp
L
D.U.T.
IAS
0.01 W
+
- VDD
Fig. 12a - Unclamped Inductive Test Circuit
VDS
VDS
tp
VDD
IAS
Fig. 12b - Unclamped Inductive Waveforms
Document Number: 91069
S10-2554-Rev. B, 08-Nov-10
www.vishay.com
5
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IRF840L.PDF ] | |
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