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IPB123N10N3G の電気的特性と機能

IPB123N10N3GのメーカーはInfineon Technologiesです、この部品の機能は「Power-Transistor」です。


製品の詳細 ( Datasheet PDF )

部品番号 IPB123N10N3G
部品説明 Power-Transistor
メーカ Infineon Technologies
ロゴ Infineon Technologies ロゴ 




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IPB123N10N3G Datasheet, IPB123N10N3G PDF,ピン配置, 機能
IPP126N10N3 G
IPB123N10N3 G IPI126N10N3 G
OptiMOSTM3 Power-Transistor
Features
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• 175 °C operating temperature
Product Summary
V DS
R DS(on),max TO-263
ID
100 V
12.3 m
58 A
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
• Halogen-free according to IEC61249-2-21
Type
IPP126N10N3 G IPB123N10N3 G IPI126N10N3 G
Package
PG-TO220-3
PG-TO263-3
Marking
126N10N
123N10N
Maximum ratings, at T j=25 °C, unless otherwise specified
PG-TO262-3
126N10N
Parameter
Symbol Conditions
Value
Continuous drain current
I D T C=25 °C2)
T C=100 °C
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS I D=46 A, R GS=25
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
58
42
232
70
±20
94
-55 ... 175
55/175/56
1)J-STD20 and JESD22
2) See figure 3
Unit
A
mJ
V
W
°C
Rev. 2.3
page 1
2010-06-23

1 Page





IPB123N10N3G pdf, ピン配列
Parameter
Symbol Conditions
IPP126N10N3 G
IPB123N10N3 G IPI126N10N3 G
min.
Values
typ.
Unit
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C iss
C oss
C rss
t d(on)
tr
t d(off)
tf
V GS=0 V, V DS=50 V,
f =1 MHz
V DD=50 V, V GS=10 V,
I D=46 A, R G=1.6
-
-
-
-
-
-
-
1880
330
14
14
8
24
5
2500 pF
439
-
- ns
-
-
-
Gate Charge Characteristics6)
Gate to source charge
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Output charge
Q gs - 9 - nC
Q gd - 5 -
Q sw
V DD=50 V, I D=46 A,
V GS=0 to 10 V
-
9
-
Q g - 26 35
V plateau
- 4.9 - V
Q oss
V DD=50 V, V GS=0 V
-
35 46 nC
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
IS
I S,pulse
V SD
t rr
Q rr
T C=25 °C
V GS=0 V, I F=46 A,
T j=25 °C
V R=15 V, I F=46 A ,
di F/dt =100 A/µs
- - 58 A
- - 232
- 0.9 1.2 V
- 61 - ns
- 103 - nC
6) See figure 16 for gate charge parameter definition
Rev. 2.3
page 3
2010-06-23


3Pages


IPB123N10N3G 電子部品, 半導体
IPP126N10N3 G
IPB123N10N3 G IPI126N10N3 G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=46 A; V GS=10 V
V GS(th)=f(T j); V GS=V DS
parameter: I D
28
26
24
22
20
18
16
98 %
14
12 typ
10
8
6
4
2
0
-60 -20 20
60 100 140 180
T j [°C]
4
3.5
3
460 µA
2.5
46 µA
2
1.5
1
0.5
0
-60 -20 20 60 100 140 180
T j [°C]
11 Typ. capacitances
C =f(V DS); V GS=0 V; f =1 MHz
104
12 Forward characteristics of reverse diode
I F=f(V SD)
parameter: T j
103
Ciss
103
Coss
102
102
175 °C
25 °C
25 °C, 98%
175 °C, 98%
Crss
101
101
0
Rev. 2.3
20 40 60
V DS [V]
100
80 0
page 6
0.5 1 1.5
V SD [V]
2
2010-06-23

6 Page



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部品番号部品説明メーカ
IPB123N10N3G

Power-Transistor

Infineon Technologies
Infineon Technologies


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