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PDF BSC118N10NSG Data sheet ( Hoja de datos )
| Número de pieza | BSC118N10NSG | |
| Descripción | Power-Transistor | |
| Fabricantes | Infineon Technologies | |
| Logotipo |  |
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BSC118N10NS G
OptiMOS™2 Power-Transistor
Features
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
Product Summary
V DS
R DS(on),max
ID
100 V
11.8 mΩ
71 A
• 150 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
PG-TDSON-8
• Ideal for high-frequency switching and synchronous rectification
• Halogen-free according to IEC61249-2-21
Type
BSC118N10NS G
Package
PG-TDSON-8
Marking
118N10NS
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C
T C=100 °C
T A=25 °C,
R thJA=45 K/W2)
Pulsed drain current3)
Avalanche energy, single pulse
Gate source voltage
I D,pulse
E AS
V GS
T C=25 °C
I D=50 A, R GS=25 Ω
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1)J-STD20 and JESD22
Value
71
44
11
280
155
±20
114
-55 ... 150
55/150/56
Unit
A
mJ
V
W
°C
Rev. 1.08
page 1
2009-11-03
1 page  
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
160
BSC118N10NS G
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
25
10 V
7V
120
6V
80
20
5 V 5.5 V
15
6V
7V
5.5 V
40
5V
10 10 V
5
4.5 V
0
012345
V DS [V]
0
0
50 100
I D [A]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
160
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
120
150
120
80
40
0
0
Rev. 1.08
150 °C
25 °C
246
V GS [V]
80
40
0
80
page 5
20 40 60 80 100 120
I D [A]
2009-11-03
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet BSC118N10NSG.PDF ] | |
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