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PDF GA03IDDJT30-FR4 Data sheet ( Hoja de datos )
| Número de pieza | GA03IDDJT30-FR4 | |
| Descripción | Isolated Gate Driver | |
| Fabricantes | GeneSiC | |
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Isolated Gate Driver
Gate Driver for SiC SJT with Output
and Signal Isolation
Features
Requires single 12 V voltage supply
Pin Out compatible with MOSFET driver boards
Multiple Internal level topology for low drive losses
High-side drive capable with 3000 V isolation
5000 V Signal Isolation (up to 10 s)
Capable of high gate currents with 3 W maximum power
RoHS Compliant
Product Image
GA03IDDJT30-FR4
VISOLATION
PDRIVE
fmax
= 3000 V
= 5W
= 350 kHz
Section I: Introduction
The GA03IDDJT30-FR4 provides an optimized gate drive solution for SiC Junction Transistors (SJT). The board utilizes DC/DC converters
and FOD3182 opto-isolators making it capable of driving high and low-side devices in a half-bridge configuration as well as IXDN609 gate
driver ICs providing fast switching and customizable continuous gate currents necessary for SJT devices. Its footprint and 12 V supply voltage
make it a plug-in replacement for existing SiC MOSFET gate drive solutions.
Figure 1: Simplified GA03IDDJT30-FR4 Gate Drive Board Block Diagram
Section II: Compatibility with SiC SJTs
The GA03IDDJT30-FR4 has an installed RG of 3.75 Ω on-board which may need to be modified by the user for safe operation of certain SJT
parts. Please see the table below and Section VII for more information.
Table 1: GA03IDDJT30-FR4 – SiC SJT Compatibility Information Table
SJT Part Number
Compatible
Requires RG Modification
GA03JT12-247
GA05JT12-247/263
GA06JT12-247
GA10JT12-247/263
GA20JT12-247/263
GA50JT12-247
GA04JT17-247
GA16JT17-247
GA50JT17-247
Not Required
Not Required
Not Required
Recommended (see Section VII)
Yes Required (see Section VII)
Required (see Section VII)
Not Required
Required (see Section VII)
Required (see Section VII)
Nov. 2014
http://www.genesicsemi.com/commercial-sic/sic-junction-transistors/
Pg 1 of 9
1 page  
Isolated Gate Driver
GA03IDDJT30-FR4
Figure 5: Location of RG (RG1 and RG2 in parallel) on GA03IDDJT30-FR4 driver for substitution
C: Gate Capacitor CG Modification
An external gate capacitor CG connected directly to the device gate pin delivers the positive current peak IG,ON during device turn-on and the
negative current peak IG,OFF during turn-off. A high value resistor R4 in parallel with CG sets the SJT gate pin to a defined potential (-VEE) during
steady off-state.
At device turn-on, CG is pulled to the GA03IDDJT30-FR4 internal voltage level VGH which produces a transient peak of gate voltage and
current. This current peak rapidly charges the internal SJT CGS and CGD capacitances. A Schottky diode, D1, in series with RG blocks any CG
induced current from draining out through RG and ensures that all of the charge within CG flows only into the device gate, allowing for an ultra-
fast device turn-on. During steady on-state, a potential of VGH - VGS = VGH – 3 V is across CG. When the device is turned off, CG is pulled to
negative VEE and VGS is pulled to a transient peak of VGS,turn-off = VEE – (VGH – 3 V), this induces the negative current peak IG,off out of the gate
which discharges the SJT internal capacitances.
D: Voltage Supply Selection
The GA03IDDJT30-FR4 gate drive design features three internal supply voltages VGH, VGL, and VEE (listed in Table 4) supplied through two
DC/DC converters. During device turn-on, VGH charges the capacitor CG thereby delivering the narrow width, high current pulse IG,ON to the SJT
gate and charges the SJT’s internal terminal capacitances CGD and CGS. For a given level of parasitic inductance in the gate circuit and SJT
package, the rise time of IG,ON is controlled by the value of VGH and CG. During the steady on-state, VGL in combination with the internal and
external gate resistances provides a continuous gate current for the SJT to remain on. The VEE supply controls the gate negative voltage
during turn-off and steady off-state for faster switching and to avoid spurious turn-on which may be caused by external circuit noise. The
power rating of the provided voltage supplies are adequate to meet the gate drive power requirements as determined by
1
,2
1
,2
,,
Table 4: GA03IDDJT30-FR4 Gate Drive Voltage Supply Component List
Symbol
Parameter
Values
Range
Default
VGH Supply Voltage, Gate Capacitor 15 – 20
+ 20.0
VGL Supply Voltage, Gate Resistor 5.0 – 7.0
+ 5.0
VEE Negative Supply Voltage
-10 – GND - 5.0
E: Voltage Supply Isolation
The DC/DC supply voltage converters are suggested to provide isolation at a minimum of twice the working VDS on the SJT transistor during
off-state to provide adequate protection to circuitry external to the gate drive circuit. The installed DC/DC converters have an isolation of
3.0 kV and greater. Alternatively, DC/DC converter galvanic isolation may be bypassed and direct connection of variable voltage supplies may
Nov. 2014
http://www.genesicsemi.com/commercial-sic/sic-junction-transistors/
Pg 5 of 9
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet GA03IDDJT30-FR4.PDF ] | |
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