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APT8M80K の電気的特性と機能

APT8M80KのメーカーはMicrosemiです、この部品の機能は「N-Channel MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 APT8M80K
部品説明 N-Channel MOSFET
メーカ Microsemi
ロゴ Microsemi ロゴ 




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APT8M80K Datasheet, APT8M80K PDF,ピン配置, 機能
APT8M80K
800V, 8A, 1.35Ω MAX,
N-Channel MOSFET
Power MOS 8is a high speed, high voltage N-channel switch-mode power MOSFET.
A proprietary planar stripe design yields excellent reliability and manufacturability. Low
switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-
tance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
help control slew rates during switching, resulting in low EMI and reliable paralleling,
even when switching at very high frequency. Reliability in flyback, boost, forward, and
other circuits is enhanced by the high avalanche energy capability.
APT8M80K
Single die MOSFET
G
FEATURES
• Fast switching with low EMI/RFI
• Low RDS(on)
• Ultra low Crss for improved noise immunity
• Low gate charge
• Avalanche energy rated
• RoHS compliant
TYPICAL APPLICATIONS
• PFC and other boost converter
• Buck converter
• Two switch forward (asymmetrical bridge)
• Single switch forward
• Flyback
• Inverters
D
S
Absolute Maximum Ratings
Symbol Parameter
ID
Continuous Drain Current @ TC = 25°C
Continuous Drain Current @ TC = 100°C
IDM Pulsed Drain Current 1
VGS Gate-Source Voltage
EAS Single Pulse Avalanche Energy 2
IAR Avalanche Current, Repetitive or Non-Repetitive
Thermal and Mechanical Characteristics
Symbol Characteristic
PD
RθJC
Total Power Dissipation @ TC = 25°C
Junction to Case Thermal Resistance
RθCS Case to Sink Thermal Resistance, Flat, Greased Surface
TJ,TSTG Operating and Storage Junction Temperature Range
TL Soldering Temperature for 10 Seconds (1.6mm from case)
WT Package Weight
Torque Mounting Torque ( TO-220 Package), 4-40 or M3 screw
MicrosemiWebsite-http://www.microsemi.com
Ratings
8
5
25
±30
285
4
Unit
A
V
mJ
A
Min Typ Max Unit
225 W
0.56
°C/W
0.11
-55 150
°C
300
0.07 oz
1.2 g
10 in·lbf
1.1 N·m

1 Page





APT8M80K pdf, ピン配列
16
VGS = 10V
14
12
10
TJ = -55°C
TJ = 25°C
8
6
4
TJ = 125°C
2
TJ = 150°C
0
0 5 10 15 20 25 30
VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V)
Figure 1, Output Characteristics
3.0
NORMALIZED TO
VGS = 10V @ 4A
2.5
2.0
1.5
1.0
0.5
0
-55 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 3, RDS(ON) vs Junction Temperature
10
TJ = -55°C
8
TJ = 25°C
6 TJ = 125°C
4
2
0
012345
ID, DRAIN CURRENT (A)
Figure 5, Gain vs Drain Current
16
ID = 4A
14
6
12
VDS = 160V
10
VDS = 400V
8
6
VDS = 640V
4
2
0
0 10 20 30 40 50 60 70
Qg, TOTAL GATE CHARGE (nC)
Figure 7, Gate Charge vs Gate-to-Source Voltage
8
TJ = 125°C
7
6
VGS= 10, & 15V
VGS= 6, & 6.5V
APT8M80K
5.5V
5
4
3 5V
2
1 4.5V
4V
0
0 5 10 15 20 25 30
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 2, Output Characteristics
25
VDS> ID(ON) x RDS(ON) MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
20
15
TJ = -55°C
10
TJ = 25°C
5
TJ = 125°C
0
01 2 3 4 56 7 8
VGS, GATE-TO-SOURCE VOLTAGE (V)
Figure 4, Transfer Characteristics
2,000
1,000
Ciss
100
Coss
10
Crss
1
0 100 200 300 400 500 600 700 800
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 6, Capacitance vs Drain-to-Source Voltage
25
20
15
TJ = 25°C
10 TJ = 150°C
5
0
0 0.3 0.6 0.9 1.2 1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (V)
Figure 8, Reverse Drain Current vs Source-to-Drain Voltage


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共有リンク

Link :


部品番号部品説明メーカ
APT8M80K

N-Channel MOSFET

Microsemi
Microsemi


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