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PDF STDLED656 Data sheet ( Hoja de datos )
| Número de pieza | STDLED656 | |
| Descripción | N-channel Power MOSFET | |
| Fabricantes | STMicroelectronics | |
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STDLED656, STFILED656,
STPLED656, STULED656
N-channel 650 V, 1.1 Ω typ., 6.0 A Power MOSFET
in DPAK, I2PAKFP, TO-220 and IPAK packages
Datasheet − preliminary data
Features
TAB
Order codes VDS
RDS(on)
max
ID PTOT
3
1
DPAK
t(s)TAB
roduc3
2
1
te PTO-220
123
I²PAKFP
TAB
IPAK
3
2
1
oleFigure 1. Internal schematic diagram
bsD(2,TAB)
ct(s) - OG(1)
lete ProduS(3)
Obso AM01476v1
STDLED656
STFILED656
STPLED656
STULED656
650 V
1.3 Ω
6.0 A
70 W
25 W
70 W
• 100% avalanche tested
• Extremely high dv/dt capability
• Gate charge minimized
• Very low intrinsic capacitance
• Improved diode reverse recovery
characteristics
• Zener-protected
Applications
• LED lighting applications
Description
These Power MOSFETs boast extremely low on-
resistance and very good dv/dt capability,
rendering them suitable for buck-boost and
flyback topologies.
Order codes
STDLED656
STFILED656
STPLED656
STULED656
Table 1. Device summary
Marking
Package
LED656
DPAK
I2PAKFP (TO-281)
TO-220
IPAK
Packaging
Tape and reel
Tube
March 2013
DocID024429 Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
1/22
www.st.com
22
1 page  
STDLED656, STFILED656, STPLED656, STULED656
Electrical characteristics
Table 7. Source drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max Unit
ISD
ISDM (1)
VSD (2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 5.4 A, VGS = 0
5.4 A
-
21.6 A
- 1.5 V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 5.4 A, di/dt = 100 A/µs
VDD= 60 V
(see Figure 21)
285
- 5100
14
ns
nC
A
trr
Qrr
)IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 5.4 A, di/dt = 100 A/µs
VDD= 60 V TJ = 150 °C
(see Figure 21)
t(s1. Pulse width limited by safe operating area
c2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
330
- 2500
15.5
ns
nC
A
ProduTable 8. Gate-source Zener diode
teSymbol
Parameter
Test conditions
soleV(BR)GSO
Gate-source breakdown
voltage
IGS= ± 1 mA, ID=0
Min. Typ. Max. Unit
30 -
-V
- ObThe built-in back-to-back Zener diodes have been specifically designed to enhance not only
)the device’s ESD capability, but also to make them capable of safely absorbing any voltage
t(stransients that may occasionally be applied from gate to source. In this respect, the Zener
voltage is appropriate to achieve efficient and cost-effective protection of device integrity.
Obsolete ProducThe integrated Zener diodes thus eliminate the need for external components.
DocID024429 Rev 1
5/22
5 Page 
STDLED656, STFILED656, STPLED656, STULED656
Package mechanical data
Table 9. DPAK (TO-252) mechanical data
mm
Dim.
Min. Typ. Max.
A 2.20
2.40
A1 0.90
1.10
A2 0.03
0.23
b 0.64
0.90
b4 5.20
5.40
c 0.45
t(s)c2 0.48
D 6.00
ucD1
rodE 6.40
PE1
tee
lee1 4.40
soH 9.35
bL 1.00
- O(L1)
t(s)L2
cL4 0.60
uR
Obsolete ProdV2 0°
0.60
0.60
6.20
5.10
6.60
4.70
2.28
4.60
10.10
1.50
2.80
0.80
1.00
0.20
8°
DocID024429 Rev 1
11/22
11 Page | ||
| Páginas | Total 22 Páginas | |
| PDF Descargar | [ Datasheet STDLED656.PDF ] | |
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