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STD15N65M5 の電気的特性と機能

STD15N65M5のメーカーはSTMicroelectronicsです、この部品の機能は「N-channel Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 STD15N65M5
部品説明 N-channel Power MOSFET
メーカ STMicroelectronics
ロゴ STMicroelectronics ロゴ 




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STD15N65M5 Datasheet, STD15N65M5 PDF,ピン配置, 機能
STB15N65M5,
STD15N65M5
N-channel 650 V, 0.308 Ω typ., 11 A MDmesh™ V Power MOSFET
in D2PAK and DPAK packages
Datasheet — production data
Features
Order codes
STB15N65M5
STD15N65M5
VDS @
TJmax
RDS(on)
max
ID
710 V < 0.34 Ω 11 A
Worldwide best RDS(on) * area
Higher VDSS rating and high dv/dt capability
Excellent switching performance
100% avalanche tested
Applications
Switching applications
Description
These devices are N-channel MDmesh™ V
Power MOSFETs based on an innovative
proprietary vertical process technology, which is
combined with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The
resulting product has extremely low on-
resistance, which is unmatched among silicon-
based Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficiency.
TAB
2
1
D2PAK
3
TAB
3
1
DPAK
Figure 1. Internal schematic diagram
$ 4!"
'
3
!-V
Table 1. Device summary
Order codes
STB15N65M5
STD15N65M5
Marking
15N65M5
Package
D2PAK
DPAK
Packaging
Tape and reel
November 2012
This is information on a product in full production.
Doc ID 023207 Rev 1
1/19
www.st.com
19

1 Page





STD15N65M5 pdf, ピン配列
STB15N65M5, STD15N65M5
1 Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
VGS Gate-source voltage
ID Drain current (continuous) at TC = 25 °C
ID Drain current (continuous) at TC = 100 °C
IDM (1) Drain current (pulsed)
PTOT Total dissipation at TC = 25 °C
dv/dt (1) Peak diode recovery voltage slope
Tstg Storage temperature
Tj Max. operating junction temperature
1. ISD 11 A, di/dt 400 A/µs; VDD = 400 V, VDS(peak) < V(BR)DSS
Table 3. Thermal data
Symbol
Parameter
Rthj-case Thermal resistance junction-case max
Rthj-pcb(1) Thermal resistance junction-pcb max
1. When mounted on 1 inch² FR-4, 2 Oz copper board.
Table 4. Avalanche characteristics
Symbol
Parameter
IAR
Avalanche current, repetetive or not repetetive
(pulse width limited by Tjmax )
EAS
Single pulse avalanche energy (starting
TJ = 25 °C, ID= IAR; VDD=50 V)
Value
± 25
11
6.9
44
85
15
- 55 to 150
150
Unit
V
A
A
A
W
V/ns
°C
°C
Value
D2PAK
DPAK
1.47
30 50
Unit
°C/W
°C/W
Value
2.5
160
Unit
A
mJ
Doc ID 023207 Rev 1
3/19


3Pages


STD15N65M5 電子部品, 半導体
Electrical characteristics
STB15N65M5, STD15N65M5
2.1 Electrical characteristics (curves)
Figure 2.
ID
(A)
Safe operating area for D²PAK
Figure 3.
AM15285v1
Thermal impedance for D²PAK
10
1
OpeLriamtiiotendinbythmisaaxreRaDSis(on)
0.1
0.01
0.1
1
Tj=150°C
Tc=25°C
Single
pulse
10 100
10µs
100µs
1ms
10ms
VDS(V)
Figure 4.
ID
(A)
Safe operating area for DPAK
Figure 5.
AM15284v1
Thermal impedance for DPAK
10
1
OpeLriamtiiotendinbythmisaaxreRaDSis(on)
0.1
0.01
0.1
1
Tj=150°C
Tc=25°C
Single
pulse
10 100
10µs
100µs
1ms
10ms
VDS(V)
Figure 6. Output characteristics
ID
(A)
VGS= 9, 10 V
20
VGS= 8 V
15
VGS= 7 V
10
Figure 7.
AM15287v1
ID
(A)
20
Transfer characteristics
VDS= 25 V
15
10
AM152887v1
5
VGS= 6 V
0
0 5 10 15 20 25 VDS(V)
5
0
3 4 5 6 7 8 9 VGS(V)
6/19 Doc ID 023207 Rev 1

6 Page



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部品番号部品説明メーカ
STD15N65M5

N-channel Power MOSFET

STMicroelectronics
STMicroelectronics


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