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PDF STD27N3LH5 Data sheet ( 特性 )
| 部品番号 | STD27N3LH5 |
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| 部品説明 | N-channel Power MOSFET | ||
| メーカ | STMicroelectronics | ||
| ロゴ |  |
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このページの下部にプレビューとSTD27N3LH5ダウンロード（pdfファイル）リンクがあります。 Total 21 pages
STD27N3LH5, STP27N3LH5
STU27N3LH5
N-channel 30 V, 0.014 Ω, 27 A, DPAK, IPAK, TO-220
STripFET™ V Power MOSFET
Features
Type
VDSS RDS(on) max
STD27N3LH5 30 V
0.019 Ω
STP27N3LH5
30 V
0.020 Ω
STU27N3LH5 30 V
0.020 Ω
■ RDS(on) * Qg industry benchmark
■ Extremely low on-resistance RDS(on)
■ Very low switching gate charge
■ High avalanche ruggedness
■ Low gate drive power losses
ID
27 A
27 A
27 A
Application
■ Switching applications
Description
This STripFET™V Power MOSFET technology is
among the latest improvements, which have been
especially tailored to achieve very low on-state
resistance providing also one of the best-in-class
figure of merit (FOM).
IPAK
3
2
1
3
1
DPAK
TO-220
3
2
1
Figure 1. Internal schematic diagram
D (TAB or 2)
G (1)
Table 1. Device summary
Order codes
STD27N3LH5
STU27N3LH5
STP27N3LH5
Marking
27N3LH5
27N3LH5
27N3LH5
S (3)
sc08440
Package
DPAK
IPAK
TO-220
Packaging
Tape and reel
Tube
Tube
March 2011
Doc ID 15617 Rev 3
1/21
www.st.com
21
1 Page  
STD27N3LH5, STP27N3LH5, STU27N3LH5
1 Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
VDS Drain-source voltage (VGS = 0)
VGS
ID (1)
Gate-Source voltage
Drain current (continuous) at TC = 25 °C
ID
IDM (2)
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
PTOT Total dissipation at TC = 25 °C
Derating factor
EAS (3) Single pulse avalanche energy
TJ Operating junction temperature
Tstg Storage temperature
1. Limited by wire bonding
2. Pulse width limited by safe operating area
3. Starting TJ = 25 °C, ID = 21 A, L= 0.2 mH
Value
DPAK, IPAK
TO-220
30
± 22
27
19
108
30 45
0.2
50
- 55 to 175
Unit
V
V
A
A
A
W
W/°C
mJ
°C
Table 3. Thermal resistance
Symbol
Parameter
Value
DPAK, IPAK
TO-220
RthJC
RthJA
TJ
Thermal resistance junction-case max
Thermal resistance junction-case max
Maximum lead temperature for soldering
purpose
5 3.33
100
275
Unit
°C/W
°C/W
°C
Doc ID 15617 Rev 3
3/21
3Pages 
Electrical characteristics
STD27N3LH5, STP27N3LH5, STU27N3LH5
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area for TO-220
Figure 3. Thermal impedance for TO-220
ID
(A)
100
10
OpLeimraitteiodnbiny mthaisxaRreDaS(oisn)
1
0.1
0.01
0.1
Tj=175°C
Tc=25°C
Sinlge
pulse
1 10
AM03897v1
100µs
1ms
10ms
VDS(V)
Figure 4. Safe operating area for DPAK, IPAK Figure 5. Thermal impedance for DPAK, IPAK
ID
(A)
100
10
OpLeimraitteiodnbiny tmhiasxaRreDaS(iosn)
1
0.1
0.01
0.1
Tj=175°C
Tc=25°C
Sinlge
pulse
1 10
AM03898v1
100µs
1ms
10ms
VDS(V)
Figure 6. Output characteristics
Figure 7. Transfer characteristics
ID
(A)
70 VGS=10V
60
50
AM03900v1
6V
5V
ID
(A)
70 VDS=5V
60
50
AM03901v1
40 40
4V
30 30
20 3V
10
0
0 1 2 3 4 VDS(V)
20
10
0
0 2 4 6 8 VGS(V)
6/21 Doc ID 15617 Rev 3
6 Page | |||
| ページ | 合計 : 21 ページ | ||
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PDF ダウンロード | [ STD27N3LH5.PDF ] | |
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| STD27N3LH5 | N-channel Power MOSFET | STMicroelectronics |