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NDF04N60Z の電気的特性と機能

NDF04N60ZのメーカーはON Semiconductorです、この部品の機能は「N-Channel Power MOSFET / Transistor」です。


製品の詳細 ( Datasheet PDF )

部品番号 NDF04N60Z
部品説明 N-Channel Power MOSFET / Transistor
メーカ ON Semiconductor
ロゴ ON Semiconductor ロゴ 




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NDF04N60Z Datasheet, NDF04N60Z PDF,ピン配置, 機能
NDF04N60Z, NDD04N60Z
N-Channel Power MOSFET
600 V, 2.0 W
Features
Low ON Resistance
Low Gate Charge
ESD DiodeProtected Gate
100% Avalanche Tested
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Parameter
Symbol NDF NDD Unit
DraintoSource Voltage
Continuous Drain Current RqJC (Note 1)
Continuous Drain Current RqJC, TA =
100°C (Note 1)
VDSS
ID
ID
600
4.8 4.1
3.0 2.6
V
A
A
Pulsed Drain Current,
VGS @ 10V
Power Dissipation RqJC
GatetoSource Voltage
Single Pulse Avalanche Energy, ID = 4.0
A
IDM
PD
VGS
EAS
20 20 A
30 83
±30
120
W
V
mJ
ESD (HBM) (JESD22A114)
RMS Isolation Voltage
(t = 0.3 sec., R.H. 30%, TA = 25°C)
(Figure 15)
Vesd
VISO
3000
4500
V
V
Peak Diode Recovery (Note 2)
dV/dt
4.5 V/ns
MOSFET dV/dt
dV/dt
60 V/ns
Continuous Source Current
(Body Diode)
IS 4.0 A
Maximum Temperature for Soldering
Leads
TL
260 °C
Operating Junction and
Storage Temperature Range
TJ, Tstg
55 to 150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Limited by maximum junction temperature
2. ISD = 4.0 A, di/dt 100 A/ms, VDD BVDSS, TJ = +150°C
www.onsemi.com
VDSS (@ TJmax)
650 V
RDS(on) (MAX) @ 2 A
2.0 Ω
NChannel
D (2)
G (1)
S (3)
1 23
NDF04N60ZG,
NDF04N60ZH
TO220FP
CASE 221AH
4
4
1 23
NDD04N60Z1G
IPAK
CASE 369D
12
3
NDD04N60ZT4G
DPAK
CASE 369AA
ORDERING AND MARKING INFORMATION
See detailed ordering, marking and shipping information on
page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
January, 2015 Rev. 9
1
Publication Order Number:
NDF04N60Z/D

1 Page





NDF04N60Z pdf, ピン配列
NDF04N60Z, NDD04N60Z
TYPICAL CHARACTERISTICS
8
TJ = 25°C
6
VGS = 15 V
10 V
7V
6.8 V
6.6 V
4 6.4 V
6.2 V
2 6.0 V
5.8 V
0 5.6 V
0 5 10 15 20 25
VDS, DRAINTOSOURCE VOLTAGE (V)
Figure 1. OnRegion Characteristics
8
VDS 30 V
6
4
TJ = 150°C
TJ = 25°C
2
0 TJ = 55°C
3 4 5678
VGS, GATETOSOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
3.5 3
ID = 2 A
TJ = 25°C
3 TJ = 25°C
2.5
2.5
2 VGS = 10 V
2
1.5 1.5
1
5 67 89
VGS (V)
Figure 3. OnResistance vs. Gate Voltage
2.6
ID = 2 A
VGS = 10 V
2
1
10
0.5 1 1.5
2 2.5 3 3.5 4
ID, DRAIN CURRENT (A)
Figure 4. OnResistance vs. Drain Current and
Gate Voltage
10,000
VGS = 0 V
1000
TJ = 150°C
1.4
0.8
0.2
50 25 0 25 50 75 100 125
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. OnResistance Variation with
Temperature
150
100
TJ = 100°C
10
0 100 200 300 400 500 600
VDS, DRAINTOSOURCE VOLTAGE (V)
Figure 6. DraintoSource Leakage Current
vs. Voltage
www.onsemi.com
3


3Pages


NDF04N60Z 電子部品, 半導体
NDF04N60Z, NDD04N60Z
ORDERING INFORMATION
Order Number
NDF04N60ZG
Package
TO220FP
(PbFree, HalogenFree)
Shipping
50 Units / Rail
NDF04N60ZH
TO220FP
(PbFree, HalogenFree)
50 Units / Rail
NDD04N60Z1G
IPAK
(PbFree, HalogenFree)
75 Units / Rail
NDD04N60ZT4G
DPAK
(PbFree, HalogenFree)
2500 / Tape and Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
MARKING DIAGRAMS
NDF04N60ZG
or
NDF04N60ZH
AYWW
Gate
Source
4
Drain
4
Drain
Drain
TO220FP
1 23
Gate Drain Source
IPAK
2
1 Drain 3
Gate Source
DPAK
A
Y
WW
G, H
= Location Code
= Year
= Work Week
= PbFree, HalogenFree Package
www.onsemi.com
6

6 Page



ページ 合計 : 9 ページ
 
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共有リンク

Link :


部品番号部品説明メーカ
NDF04N60Z

N-Channel Power MOSFET / Transistor

ON Semiconductor
ON Semiconductor
NDF04N60ZH

N-Channel Power MOSFET / Transistor

ON Semiconductor
ON Semiconductor


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