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NDF04N60ZのメーカーはON Semiconductorです、この部品の機能は「N-Channel Power MOSFET / Transistor」です。 |
部品番号 | NDF04N60Z |
| |
部品説明 | N-Channel Power MOSFET / Transistor | ||
メーカ | ON Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとNDF04N60Zダウンロード(pdfファイル)リンクがあります。 Total 9 pages
NDF04N60Z, NDD04N60Z
N-Channel Power MOSFET
600 V, 2.0 W
Features
• Low ON Resistance
• Low Gate Charge
• ESD Diode−Protected Gate
• 100% Avalanche Tested
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Parameter
Symbol NDF NDD Unit
Drain−to−Source Voltage
Continuous Drain Current RqJC (Note 1)
Continuous Drain Current RqJC, TA =
100°C (Note 1)
VDSS
ID
ID
600
4.8 4.1
3.0 2.6
V
A
A
Pulsed Drain Current,
VGS @ 10V
Power Dissipation RqJC
Gate−to−Source Voltage
Single Pulse Avalanche Energy, ID = 4.0
A
IDM
PD
VGS
EAS
20 20 A
30 83
±30
120
W
V
mJ
ESD (HBM) (JESD22−A114)
RMS Isolation Voltage
(t = 0.3 sec., R.H. ≤ 30%, TA = 25°C)
(Figure 15)
Vesd
VISO
3000
4500 −
V
V
Peak Diode Recovery (Note 2)
dV/dt
4.5 V/ns
MOSFET dV/dt
dV/dt
60 V/ns
Continuous Source Current
(Body Diode)
IS 4.0 A
Maximum Temperature for Soldering
Leads
TL
260 °C
Operating Junction and
Storage Temperature Range
TJ, Tstg
−55 to 150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Limited by maximum junction temperature
2. ISD = 4.0 A, di/dt ≤ 100 A/ms, VDD ≤ BVDSS, TJ = +150°C
www.onsemi.com
VDSS (@ TJmax)
650 V
RDS(on) (MAX) @ 2 A
2.0 Ω
N−Channel
D (2)
G (1)
S (3)
1 23
NDF04N60ZG,
NDF04N60ZH
TO−220FP
CASE 221AH
4
4
1 23
NDD04N60Z−1G
IPAK
CASE 369D
12
3
NDD04N60ZT4G
DPAK
CASE 369AA
ORDERING AND MARKING INFORMATION
See detailed ordering, marking and shipping information on
page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
January, 2015 − Rev. 9
1
Publication Order Number:
NDF04N60Z/D
1 Page NDF04N60Z, NDD04N60Z
TYPICAL CHARACTERISTICS
8
TJ = 25°C
6
VGS = 15 V
10 V
7V
6.8 V
6.6 V
4 6.4 V
6.2 V
2 6.0 V
5.8 V
0 5.6 V
0 5 10 15 20 25
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
8
VDS ≥ 30 V
6
4
TJ = 150°C
TJ = 25°C
2
0 TJ = −55°C
3 4 5678
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
3.5 3
ID = 2 A
TJ = 25°C
3 TJ = 25°C
2.5
2.5
2 VGS = 10 V
2
1.5 1.5
1
5 67 89
VGS (V)
Figure 3. On−Resistance vs. Gate Voltage
2.6
ID = 2 A
VGS = 10 V
2
1
10
0.5 1 1.5
2 2.5 3 3.5 4
ID, DRAIN CURRENT (A)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
10,000
VGS = 0 V
1000
TJ = 150°C
1.4
0.8
0.2
−50 −25 0 25 50 75 100 125
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
150
100
TJ = 100°C
10
0 100 200 300 400 500 600
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
www.onsemi.com
3
3Pages NDF04N60Z, NDD04N60Z
ORDERING INFORMATION
Order Number
NDF04N60ZG
Package
TO−220FP
(Pb−Free, Halogen−Free)
Shipping†
50 Units / Rail
NDF04N60ZH
TO−220FP
(Pb−Free, Halogen−Free)
50 Units / Rail
NDD04N60Z−1G
IPAK
(Pb−Free, Halogen−Free)
75 Units / Rail
NDD04N60ZT4G
DPAK
(Pb−Free, Halogen−Free)
2500 / Tape and Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
MARKING DIAGRAMS
NDF04N60ZG
or
NDF04N60ZH
AYWW
Gate
Source
4
Drain
4
Drain
Drain
TO−220FP
1 23
Gate Drain Source
IPAK
2
1 Drain 3
Gate Source
DPAK
A
Y
WW
G, H
= Location Code
= Year
= Work Week
= Pb−Free, Halogen−Free Package
www.onsemi.com
6
6 Page | |||
ページ | 合計 : 9 ページ | ||
|
PDF ダウンロード | [ NDF04N60Z データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
NDF04N60Z | N-Channel Power MOSFET / Transistor | ON Semiconductor |
NDF04N60ZH | N-Channel Power MOSFET / Transistor | ON Semiconductor |