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RZQ050P01 の電気的特性と機能

RZQ050P01のメーカーはROHM Semiconductorです、この部品の機能は「Pch -12V -5A Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 RZQ050P01
部品説明 Pch -12V -5A Power MOSFET
メーカ ROHM Semiconductor
ロゴ ROHM Semiconductor ロゴ 




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RZQ050P01 Datasheet, RZQ050P01 PDF,ピン配置, 機能
RZQ050P01
Pch -12V -5A Power MOSFET
Datasheet
VDSS
RDS(on) (Max.)
ID
PD
-12V
26mW
-5A
1.25W
lFeatures
1) Low on - resistance.
2) -1.5V Drive.
3) Built-in G-S Protection Diode.
4) Small Surface Mount Package (TSMT6).
5) Pb-free lead plating ; RoHS compliant
lApplication
DC/DC converters
lAbsolute maximum ratings(Ta = 25°C)
Parameter
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Power dissipation
Junction temperature
Range of storage temperature
lOutline
TSMT6
SOT-457T
(6)
(5)
(4)
(1)
(2)
(3)
lInner circuit
(1) Drain
(2) Drain
(3) Gate
(4) Source
(5) Drain
(6) Drain
*1 ESD PROTECTION DIODE
*2 BODY DIODE
lPackaging specifications
Packaging
Reel size (mm)
Tape width (mm)
Type
Basic ordering unit (pcs)
Taping code
Marking
Taping
180
8
3,000
TR
YF
Symbol
VDSS
ID *1
ID,pulse *2
VGSS
PD *3
PD *4
Tj
Tstg
Value
-12
5
20
10
1.25
0.6
150
-55 to +150
Unit
V
A
A
V
W
W
°C
°C
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
1/11
2012.10 - Rev.B

1 Page





RZQ050P01 pdf, ピン配列
RZQ050P01
Data Sheet
lElectrical characteristics(Ta = 25°C)
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn - on delay time
Rise time
Turn - off delay time
Fall time
Symbol
Ciss
Coss
Crss
td(on) *5
tr *5
td(off) *5
tf *5
Conditions
VGS = 0V
VDS = -6V
f = 1MHz
VDD -6V, VGS = -4.5V
ID = -2.5A
RL = 2.4W
RG = 10W
Min.
-
-
-
-
-
-
-
Values
Typ.
2850
350
320
12
100
420
225
Max.
-
-
-
-
-
-
-
Unit
pF
ns
lGate Charge characteristics(Ta = 25°C)
Parameter
Symbol
Conditions
Total gate charge
Gate - Source charge
Gate - Drain charge
Qg *5
Qgs *5
Qgd *5
VDD -6V, ID= -5A
VGS = -4.5V
Values
Min. Typ. Max.
- 35
-
- 6.5
-
- 5.5
-
Unit
nC
lBody diode electrical characteristics (Source-Drain)(Ta = 25°C)
Parameter
Symbol
Conditions
Min.
Values
Typ.
Max.
Inverse diode continuous,
forward current
Forward voltage
IS *1 Ta = 25C
VSD *5 VGS = 0V, Is = -5A
- - -1
- - -1.2
Unit
A
V
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
3/11
2012.10 - Rev.B


3Pages


RZQ050P01 電子部品, 半導体
RZQ050P01
lElectrical characteristic curves
Data Sheet
Fig.9 Gate Threshold Voltage
vs. Junction Temperature
3
VDS = -10V
ID = -1mA
Pulsed
2
1
Fig.10 Transconductance vs. Drain Current
100
VDS= -6V
Pulsed
10
Ta= 125ºC
Ta=75ºC
1 Ta=25ºC
Ta= -25ºC
0
-50
0 50 100 150
Junction Temperature : Tj [°C]
0
0.1
1
Drain Current : -ID [A]
10
Fig.11 Drain CurrentDerating Curve
1.2
1
0.8
0.6
0.4
0.2
0
-25 0 25 50 75 100 125 150
Junction Temperature : Tj [ºC]
Fig.12 Static Drain - Source On - State
Resistance vs. Gate Source Voltage
150
Ta=25ºC
125
ID = -2.5A
Pulsed
100 ID = -5.0A
75
50
25
0
0 2 4 6 8 10
Gate - Source Voltage : -VGS [V]
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
6/11
2012.10 - Rev.B

6 Page



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部品番号部品説明メーカ
RZQ050P01

Pch -12V -5A Power MOSFET

ROHM Semiconductor
ROHM Semiconductor


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