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US6J11 の電気的特性と機能

US6J11のメーカーはROHM Semiconductorです、この部品の機能は「Pch -12V -1.3A Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 US6J11
部品説明 Pch -12V -1.3A Power MOSFET
メーカ ROHM Semiconductor
ロゴ ROHM Semiconductor ロゴ 




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US6J11 Datasheet, US6J11 PDF,ピン配置, 機能
US6J11
Pch -12V -1.3A Power MOSFET
Datasheet
VDSS
RDS(on) (Max.)
ID
PD
-12V
260mW
-1.3A
1.0W
lOutline
TUMT6
SOT-363T
(6)
(5)
(4)
(1)
(2)
(3)
lFeatures
1) Low on - resistance.
2) -1.5V Drive.
3) Built-in G-S Protection Diode.
4) Small Surface Mount Package (TUMT6).
5) Pb-free lead plating ; RoHS compliant
lInner circuit
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Drain
(4) Tr2 Source
(5) Tr2 Gate
(6) Tr1 Drain
*1 ESD PROTECTION DIODE
*2 BODY DIODE
lPackaging specifications
Packaging
Taping
lApplication
DC/DC converters
Reel size (mm)
Tape width (mm)
Type
Basic ordering unit (pcs)
180
8
3,000
Taping code
TR
Marking
J11
lAbsolute maximum ratings(Ta = 25°C) <It is the same ratings for the Tr1 and Tr2>
Parameter
Symbol
Value
Unit
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
VDSS
ID *1
ID,pulse *2
VGSS
-12
1.3
5.2
10
V
A
A
V
Power dissipation
Junction temperature
Range of storage temperature
PD *3
PD *4
Tj
Tstg
1.0
0.7
0.32
150
-55 to +150
W / total
W / element
W / total
°C
°C
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
1/11
2012.10 - Rev.B

1 Page





US6J11 pdf, ピン配列
US6J11
Data Sheet
lElectrical characteristics(Ta = 25°C)
<It is the same characteristics for the Tr1 and Tr2>
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn - on delay time
Rise time
Turn - off delay time
Fall time
Symbol
Conditions
Min.
Ciss VGS = 0V
-
Coss
Crss
td(on) *5
tr *5
td(off) *5
tf *5
VDS = -6V
f = 1MHz
VDD -6V, VGS = -4.5V
ID = -0.6A
RL = 10W
RG = 10W
-
-
-
-
-
-
Values
Typ.
290
28
21
8
10
30
9
Max.
-
-
-
-
-
-
-
Unit
pF
ns
lGate Charge characteristics(Ta = 25°C)
<It is the same characteristics for the Tr1 and Tr2>
Parameter
Symbol
Conditions
Total gate charge
Gate - Source charge
Gate - Drain charge
Qg *5
Qgs *5
Qgd *5
VDD -6V, ID= -1.3A
VGS = -4.5V
Values
Min. Typ. Max.
- 2.4 -
- 0.6 -
- 0.4 -
Unit
nC
lBody diode electrical characteristics (Source-Drain)(Ta = 25°C)
<It is the same characteristics for the Tr1 and Tr2>
Parameter
Symbol
Conditions
Min.
Values
Typ.
Max.
Inverse diode continuous,
forward current
Forward voltage
IS *1 Ta = 25°C
VSD *5 VGS = 0V, Is = -1.3A
-
-
- -0.5
- -1.2
Unit
A
V
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
3/11
2012.10 - Rev.B


3Pages


US6J11 電子部品, 半導体
US6J11
lElectrical characteristic curves
Fig.9 Gate Threshold Voltage
vs. Junction Temperature
2
VDS = -10V
ID = -1mA
Pulsed
Data Sheet
Fig.10 Transconductance vs. Drain Current
10
VDS= -6V
Pulsed
1
0
-50
0 50 100 150
Junction Temperature : Tj [°C]
1
0.1
0.01
Ta= -25ºC
Ta=25ºC
Ta=75ºC
Ta=125ºC
0.1 1
Drain Current : -ID [A]
10
Fig.11 Drain CurrentDerating Curve
1.2
1
0.8
0.6
0.4
0.2
0
-25 0
25 50 75 100 125 150
Junction Temperature : Tj [ºC]
Fig.12 Static Drain - Source On - State
Resistance vs. Gate Source Voltage
600
Ta=25ºC
500 Pulsed
400 ID = -0.6A
300 ID = -1.3A
200
100
0
0 2 4 6 8 10
Gate - Source Voltage : -VGS [V]
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
6/11
2012.10 - Rev.B

6 Page



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部品番号部品説明メーカ
US6J11

Pch -12V -1.3A Power MOSFET

ROHM Semiconductor
ROHM Semiconductor


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