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RUF020N02のメーカーはROHM Semiconductorです、この部品の機能は「Nch 20V 2.0A Power MOSFET」です。 |
部品番号 | RUF020N02 |
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部品説明 | Nch 20V 2.0A Power MOSFET | ||
メーカ | ROHM Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとRUF020N02ダウンロード(pdfファイル)リンクがあります。 Total 12 pages
RUF020N02
Nch 20V 2.0A Power MOSFET
Datasheet
VDSS
RDS(on) (Max.)
ID
PD
20V
105mW
2A
0.8W
lFeatures
1) Low on - resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (TUMT3).
4) Pb-free lead plating ; RoHS compliant
lApplication
DC/DC converters
lAbsolute maximum ratings(Ta = 25°C)
Parameter
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Power dissipation
Junction temperature
Range of storage temperature
lOutline
TUMT3
SOT-323T
(1)
(2)
lInner circuit
(3)
(1) Gate
(2) Source
(3) Drain
*1 ESD PROTECTION DIODE
*2 BODY DIODE
lPackaging specifications
Packaging
Reel size (mm)
Tape width (mm)
Type
Basic ordering unit (pcs)
Taping code
Marking
Taping
180
8
3,000
TL
XK
Symbol
VDSS
ID *1
ID,pulse *2
VGSS
PD *3
PD *4
Tj
Tstg
Value
20
2
6
10
0.8
0.32
150
-55 to +150
Unit
V
A
A
V
W
W
°C
°C
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
1/11
2013.02 - Rev.B
1 Page RUF020N02
Data Sheet
lElectrical characteristics(Ta = 25°C)
Parameter
Symbol
Conditions
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn - on delay time
Rise time
Turn - off delay time
Fall time
Ciss
Coss
Crss
td(on) *5
tr *5
td(off) *5
tf *5
VGS = 0V
VDS = 10V
f = 1MHz
VDD ⋍ 10V, VGS = 4.5V
ID = 1A
RL = 10W
RG = 10W
Values
Min. Typ. Max.
- 180 -
- 45 -
- 25 -
-6-
- 17 -
- 30 -
- 30 -
Unit
pF
ns
lGate Charge characteristics(Ta = 25°C)
Parameter
Symbol
Conditions
Total gate charge
Gate - Source charge
Gate - Drain charge
Qg *5
Qgs *5
Qgd *5
VDD ⋍ 10V, ID=2A
VGS = 4.5V
Values
Min. Typ. Max.
- 2.0 -
- 0.6 -
- 0.4 -
Unit
nC
lBody diode electrical characteristics (Source-Drain)(Ta = 25°C)
Parameter
Symbol
Conditions
Min.
Values
Typ.
Max.
Inverse diode continuous,
forward current
Forward voltage
IS *1 Ta = 25°C
VSD *5 VGS = 0V, Is = 2A
- - 0.6
- - 1.2
Unit
A
V
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
3/11
2013.02 - Rev.B
3Pages RUF020N02
lElectrical characteristic curves
Fig.9 Gate Threshold Voltage
vs. Junction Temperature
3
VDS = 10V
ID = 1mA
pulsed
2
1
0
-50
0 50 100 150
Junction Temperature : Tj [°C]
Data Sheet
Fig.10 Transconductance vs. Drain Current
10
VDS= 10V
Pulsed
1
0.1
0.01
Ta= -25ºC
Ta=25ºC
Ta=75ºC
Ta=125ºC
0.1 1
Drain Current : ID [A]
10
Fig.11 Drain CurrentDerating Curve
1.2
1
0.8
0.6
0.4
0.2
0
-25 0
25 50 75 100 125 150
Junction Temperature : Tj [ºC]
Fig.12 Static Drain - Source On - State
Resistance vs. Gate Source Voltage
300
Ta=25ºC
Pulsed
250 ID= 2.0A
200 ID= 1.0A
150
100
50
0
0 2 4 6 8 10
Gate - Source Voltage : VGS [V]
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
6/11
2013.02 - Rev.B
6 Page | |||
ページ | 合計 : 12 ページ | ||
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部品番号 | 部品説明 | メーカ |
RUF020N02 | Nch 20V 2.0A Power MOSFET | ROHM Semiconductor |