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IXTM11N80 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IXTM11N80
部品説明 MegaMOS FET
メーカ IXYS
ロゴ IXYS ロゴ 



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IXTM11N80 Datasheet, IXTM11N80 PDF,ピン配置, 機能
MegaMOSTMFET
N-Channel Enhancement Mode
VDSS
IXTH / IXTM 11N80 800 V
IXTH / IXTM 13N80 800 V
ID25
11 A
13 A
RDS(on)
0.95
0.80
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
VGS
VGSM
I
D25
IDM
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 M
Continuous
Transient
T
C
= 25°C
TC = 25°C, pulse width limited by TJM
11N80
13N80
11N80
13N80
800 V
800 V
±20 V
±30 V
11 A
13 A
44 A
52 A
PD
TJ
TJM
Tstg
Md
Weight
TC = 25°C
Mounting torque
300 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
1.13/10 Nm/lb.in.
TO-204 = 18 g, TO-247 = 6 g
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300 °C
TO-247 AD (IXTH)
D (TAB)
TO-204 AA (IXTM)
G = Gate,
S = Source,
G
D = Drain,
TAB = Drain
Features
q International standard packages
q Low R
HDMOSTM process
DS (on)
q Rugged polysilicon gate cell structure
q Low package inductance (< 5 nH)
- easy to drive and to protect
q Fast switching times
Symbol
V
DSS
VGS(th)
IGSS
IDSS
R DS(on)
Test Conditions
Characteristic Values
(T
J
=
25°C,
unless
otherwise
specified)
min. typ. max.
V = 0 V, I = 3 mA
GS D
VDS = VGS, ID = 250 µA
VGS = ±20 VDC, VDS = 0
VDS = 0.8 • VDSS
V =0V
GS
TJ = 25°C
T
J
=
125°C
VGS = 10 V, ID = 0.5 ID25
Pulse test, t 300 µs,
800
2
11N80
13N80
V
4.5 V
±100 nA
250 µA
1 mA
0.95
0.80
Applications
q Switch-mode and resonant-mode
power supplies
q Motor controls
q Uninterruptible Power Supplies (UPS)
q DC choppers
Advantages
q Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
q Space savings
q High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS Corporation
3540 Bassett Street, Santa Clara,CA 95054
Tel: 408-982-0700 Fax: 408-496-0670
915380F (5/96)
IXYS Semiconductor
Edisonstr. 15, D-68623 Lampertheim, Germany
Tel: +49-6206-5030 Fax: +49-6206-503629

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