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HY1707B の電気的特性と機能

HY1707BのメーカーはHOOYIです、この部品の機能は「N-Channel Enhancement Mode MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 HY1707B
部品説明 N-Channel Enhancement Mode MOSFET
メーカ HOOYI
ロゴ HOOYI ロゴ 




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HY1707B Datasheet, HY1707B PDF,ピン配置, 機能
HY1707P/M/B/I/MF/PS/PM
Features
70V/80A,
RDS(ON)= 6m(typ.) @ VGS=10V
Avalanche Rated
Reliable and Rugged
Lead Free and Green Devices Available
(RoHS Compliant)
N-Channel Enhancement Mode MOSFET
Pin Description
DS
G
TO-220FB-3L
DS
G
TO-220FB-3S
DS
G
TO-263-2L
DS
G
TO-262-3L
Applications
Power Management for Inverter Systems.
DS
G
TO-220MF-3L
DS
G
TO-3PS-3L
D
DS
G
TO-3PS-3M
G N-Channel MOSFET
Ordering and Marking Information
S
P MB I
HY1707 HY1707 HY1707 HY1707
YYÿ XXXJWW G YYÿ XXXJWW G YYÿ XXXJWW G YYÿ XXXJWW G
MF PS PM
HY1707 HY1707 HY1707
YYÿ XXXJWW G YYÿ XXXJWW G YYÿ XXXJWW G
Package Code
P : TO-220FB-3L
B: TO-263-2L
MF: TO-220MF-3L
PM: TO-3PS-3M
Date Code
YYXXX WW
M : TO-220FB-3S
I : TO-262-3L
PS: TO-3PS-3L
Assembly Material
G : Lead Free Device
Note: HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. HOOYI lead-free products meet or exceed the lead-free
requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. HOOYI
defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in
homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
HOOYI reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
1 www.hooyi.cc
151015

1 Page





HY1707B pdf, ピン配列
HY1707P/M/B/I/MF/PS/PM
Electrical Characteristics (Cont.)
(T
C
=
25°C
Unless
Otherwise
Noted)
Symbol
Parameter
Test Conditions
Dynamic Characteristics
RG Gate Resistance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
td(ON) Turn-on Delay Time
Tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
Tf Turn-off Fall Time
Gate Charge Characteristics
VGS=0V,VDS=0V,F=1MHz
VGS=0V,
VDS=25V,
Frequency=1.0MHz
VDD=35V, RG =3 ,
IDS=40A, VGS=10V,
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=55V, VGS=10V,
IDS=40A
Note * : Pulse test ; pulse width 300µs, duty cycle2%.
HY1707
Min. Typ. Max.
- 0.9 -
- 4550 -
- 900 -
- 280 -
- 21 39
- 10 19
- 25 48
- 31 57
- 88 -
- 20 -
- 21 -
Unit
pF
ns
nC
3 www.hooyi.cc


3Pages


HY1707B 電子部品, 半導体
HY1707P/M/B/I/MF/PS/PM
Typical Operating Characteristics (Cont.)
Drain-Source On Resistance
2.2
V = 10V
2.0
GS
I = 40A
DS
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
R @T
ON
=25oC:
j
6m
0.2
-50 -25 0 25 50 75 100 125 150 175
Tj - Junction Temperature (°C)
Source-Drain Diode Forward
160
100
T =175oC
10 j
1
T =25oC
j
0.1
0.0 0.3 0.6 0.9 1.2 1.5
VSD - Source-Drain Voltage (V)
Capacitance
10000
9000
Frequency=1MHz
8000
7000
6000
5000
Ciss
4000
3000
2000
1000 Crss
Coss
0
0 5 10 15 20 25 30 35 40
VDS - Drain - Source Voltage (V)
Gate Charge
10
V = 55V
9
DS
I = 40A
DS
8
7
6
5
4
3
2
1
0
0 12 24 36 48 60 72 84 96
QG - Gate Charge (nC)
6 www.hooyi.cc

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
HY1707B

N-Channel Enhancement Mode MOSFET

HOOYI
HOOYI
HY1707I

N-Channel Enhancement Mode MOSFET

HOOYI
HOOYI
HY1707M

N-Channel Enhancement Mode MOSFET

HOOYI
HOOYI
HY1707MF

N-Channel Enhancement Mode MOSFET

HOOYI
HOOYI


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