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NTHC5513のメーカーはON Semiconductorです、この部品の機能は「Power MOSFET ( Transistor )」です。 |
部品番号 | NTHC5513 |
| |
部品説明 | Power MOSFET ( Transistor ) | ||
メーカ | ON Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとNTHC5513ダウンロード(pdfファイル)リンクがあります。 Total 10 pages
NTHC5513
Power MOSFET
20 V, +3.9 A / −3.0 A,
Complementary ChipFETt
Features
• Complementary N−Channel and P−Channel MOSFET
• Small Size, 40% Smaller than TSOP−6 Package
• Leadless SMD Package Featuring Complementary Pair
• ChipFET Package Provides Great Thermal Characteristics Similar to
Larger Packages
• Low RDS(on) in a ChipFET Package for High Efficiency Performance
• Low Profile (< 1.10 mm) Allows Placement in Extremely Thin
Environments Such as Portable Electronics
• Pb−Free Package is Available
Applications
• Load Switch Applications Requiring Level Shift
• DC−DC Conversion Circuits
• Drive Small Brushless DC Motors
• Designed for Power Management Applications in Portable, Battery
Powered Products
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
N−Ch TA = 25°C
Steady
State TA = 85°C
tv5
P−Ch
Steady
State
TA = 25°C
TA = 25°C
TA = 85°C
Pulsed Drain Current
(Note 1)
tv5
N−Ch
P−Ch
TA = 25°C
t = 10 ms
t = 10 ms
VDSS
VGS
ID
ID
IDM
20
±12
2.9
2.1
3.9
−2.2
−1.6
−3.0
12
−9.0
V
V
A
A
A
Power Dissipation
(Note 1)
Steady
State
TA = 25°C
PD
1.1 W
tv5
Operating Junction and Storage
Temperature
TA = 25°C
Lead Temperature for Soldering Purposes
(1/8” from case for 10 seconds)
TJ,
TSTG
TL
2.1
−55 to
150
260
°C
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surface Mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
[1 oz] including traces).
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V(BR)DSS
N−Channel
20 V
P−Channel
−20 V
RDS(on) TYP
60 mW @ 4.5 V
80 mW @ 2.5 V
130 mW @ −4.5 V
200 mW @ −2.5 V
ID MAX
3.9 A
−3.0 A
D1 S2
G1 G2
S1
N−Channel MOSFET
D2
P−Channel MOSFET
ChipFET
CASE 1206A
STYLE 2
PIN
CONNECTIONS
MARKING
DIAGRAM
D1 8
D1 7
D2 6
D2 5
1 S1
2 G1
3 S2
4 G2
1
2
3
4
8
7
6
5
C1 = Specific Device Code
M = Month Code
ORDERING INFORMATION
Device
Package
Shipping†
NTHC5513T1 ChipFET 3000/Tape & Reel
NTHC5513T1G ChipFET 3000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2004
October, 2004 − Rev. 4
1
Publication Order Number:
NTHC5513/D
1 Page NTHC5513
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol N/P
Test Conditions
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
td(ON)
Rise Time
tr
Turn−Off Delay Time
td(OFF)
Fall Time
tf
Turn−On Delay Time
td(ON)
Rise Time
tr
Turn−Off Delay Time
td(OFF)
Fall Time
tf
DRAIN−SOURCE DIODE CHARACTERISTICS
N VDD = 16 V, VGS = 4.5 V, ID = 2.9 A,
RG = 2.5 W
P
VDD = −16 V, VGS = −4.5 V, ID = −2.2 A,
RG = 2.5 W
Forward Diode Voltage (Note 5)
VSD
N
P
VGS = 0 V
Reverse Recovery Time (Note 4)
tRR N
P
Charge Time
Discharge Time
ta N
P VGS = 0 V,
tb N dIS / dt = 100 A/ms
P
Reverse Recovery Charge
QRR
N
P
4. Switching characteristics are independent of operating junction temperatures.
5. Pulse Test: Pulse Width v 250 ms, Duty Cycle v 2%.
IS = 2.6 A
IS = −2.1 A
IS = 1.5 A
IS = −1.5 A
IS = 1.5 A
IS = −1.5 A
IS = 1.5 A
IS = −1.5 A
IS = 1.5 A
IS = −1.5 A
Min Typ Max Unit
5.0 10 ns
9.0 18
10 20
3.0 6.0
7.0 12
13 25
33 50
27 40
0.8 1.15
−0.8 −1.15
12.5
32
9.0
10
3.5
22
6.0
15
V
ns
nC
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3
3Pages NTHC5513
TYPICAL P−CHANNEL PERFORMANCE CURVES
(TJ = 25°C unless otherwise noted)
4
VGS = −6 V to −3 V
TJ = 25°C
VGS = −2.4 V
−2 V
−2.2 V
3
4
VDS ≥ −10 V
3
−1.8 V
2
−1.6 V
1 −1.4 V
−1.2 V
0
01 2345678
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 11. On−Region Characteristics
2
TC = −55°C
1
25°C
100°C
0
0.5 1 1.5 2 2.5
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 12. Transfer Characteristics
3
0.5
ID = −2.1 A
TJ = 25°C
0.4
0.3
0.2
0.1
0
12 3 4 5
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
6
Figure 13. On−Resistance vs. Gate−to−Source
Voltage
0.25
0.225
TJ = 25°C
0.2
VGS = −2.5 V
0.175
0.15
0.125
VGS = −4.5 V
0.1
0.5 1.5 2.5 3.5
−ID, DRAIN CURRENT (AMPS)
Figure 14. On−Resistance vs. Drain Current
and Gate Voltage
1.6
ID = −2.1 A
VGS = −4.5 V
1.4
1.2
10000
VGS = 0 V
1000
TJ = 150°C
1 100 TJ = 100°C
0.8
0.6
−50 −25
0
25 50 75 100 125 150
−TJ, JUNCTION TEMPERATURE (°C)
Figure 15. On−Resistance Variation with
Temperature
10
2 4 6 8 10 12 14 16 18 20
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 16. Drain−to−Source Leakage Current
vs. Voltage
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部品番号 | 部品説明 | メーカ |
NTHC5513 | Power MOSFET ( Transistor ) | ON Semiconductor |