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NTHD5905T1のメーカーはON Semiconductorです、この部品の機能は「Power MOSFET ( Transistor )」です。 |
部品番号 | NTHD5905T1 |
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部品説明 | Power MOSFET ( Transistor ) | ||
メーカ | ON Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとNTHD5905T1ダウンロード(pdfファイル)リンクがあります。 Total 8 pages
NTHD5905T1
Power MOSFET
Dual P−Channel ChipFETt
3.0 Amps, 8 Volts
Features
• Low RDS(on) for Higher Efficiency
• Logic Level Gate Drive
• Miniature ChipFET Surface Mount Package
Applications
• Power Management in Portable and Battery−Powered Products; i.e.,
Cellular and Cordless Telephones and PCMCIA Cards
http://onsemi.com
DUAL P−CHANNEL
3.0 AMPS, 8 VOLTS
RDS(on) = 90 mW
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Steady
Symbol 5 secs State
Drain−Source Voltage
Gate−Source Voltage
Continuous Drain Current
(TJ = 150°C) (Note 1)
TA = 25°C
TA = 85°C
Pulsed Drain Current
Continuous Source Current
(Diode Conduction) (Note 1)
VDS −8.0
VGS "8.0
ID
"4.1
"2.9
"3.0
"2.2
IDM "10
IS −1.8 −0.9
Maximum Power Dissipation
(Note 1)
TA = 25°C
TA = 85°C
Operating Junction and Storage
Temperature Range
PD
TJ, Tstg
2.1 1.1
1.1 0.6
−55 to +150
1. Surface Mounted on 1″ x 1″ FR4 Board.
Unit
V
V
A
A
A
W
°C
S1
G1
S2
G2
D1
P−Channel MOSFET
D2
P−Channel MOSFET
ChipFET
CASE 1206A
STYLE 2
PIN CONNECTIONS
MARKING
DIAGRAM
D1 8
D1 7
D2 6
D2 5
1 S1
2 G1
3 S2
4 G2
1
2
3
4
8
7
6
5
A9 = Specific Device Code
ORDERING INFORMATION
Device
Package
Shipping
NTHD5905T1 ChipFET
3000/Tape & Reel
© Semiconductor Components Industries, LLC, 2005
February, 2005 − Rev. XXX
1
Publication Order Number:
NTHD5905T1/D
1 Page 10
VGS = 5
thru 3 V
8
6
NTHD5905T1
TYPICAL ELECTRICAL CHARACTERISTICS
2.5 V
10
8
2V 6
TC = −55°C
25°C
125°C
44
2
1.5 V
2
1V
00
0 0.5 1.0 1.5 2.0 2.5 3.0
0 0.5 1.0 1.5 2.0 2.5 3.0
−VDS, Drain−to−Source Voltage (V)
−VGS, Gate−to−Source Voltage (V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
0.30
0.25
VGS = 1.8 V
0.20
0.15
0.10
VGS = 2.5 V
VGS = 4.5 V
0.05
0
0 2 4 6 8 10
−ID, Drain Current (A)
Figure 3. On−Resistance vs. Drain Current
1000
800
600
400
200
0
0
Ciss
Coss
Crss
4 8 12 16
−VDS, Drain−to−Source Voltage (V)
Figure 4. Capacitance
20
5 1.6
VGS = 4.5 V
4 1.4 ID = 3 A
3 1.2
2 1.0
1 0.8
0 0.6
01
23
4
5
6
−50 −25 0
25 50 75 100 125 150
Qg, Total Gate Charge (nC)
TJ, Junction Temperature (°C)
Figure 5. Gate Charge
Figure 6. On−Resistance vs.
Junction Temperature
http://onsemi.com
3
3Pages Notes
NTHD5905T1
http://onsemi.com
6
6 Page | |||
ページ | 合計 : 8 ページ | ||
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部品番号 | 部品説明 | メーカ |
NTHD5905T1 | Power MOSFET ( Transistor ) | ON Semiconductor |