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MMDF2P02EのメーカーはON Semiconductorです、この部品の機能は「Power MOSFET ( Transistor )」です。 |
部品番号 | MMDF2P02E |
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部品説明 | Power MOSFET ( Transistor ) | ||
メーカ | ON Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとMMDF2P02Eダウンロード(pdfファイル)リンクがあります。 Total 7 pages
MMDF2P02E
Power MOSFET
2 Amps, 25 Volts
P−Channel SO−8, Dual
These miniature surface mount MOSFETs feature ultra low RDS(on)
and true logic level performance. They are capable of withstanding
high energy in the avalanche and commutation modes and the
drain−to−source diode has a low reverse recovery time. These devices
are designed for use in low voltage, high speed switching applications
where power efficiency is important. Typical applications are dc−dc
converters, and power management in portable and battery powered
products such as computers, printers, cellular and cordless phones.
They can also be used for low voltage motor controls in mass storage
products such as disk drives and tape drives. The avalanche energy is
specified to eliminate the guesswork in designs where inductive loads
are switched and offer additional safety margin against unexpected
voltage transients.
Features
• Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life
• Logic Level Gate Drive − Can Be Driven by Logic ICs
• Miniature SO−8 Surface Mount Package − Saves Board Space
• Diode Is Characterized for Use In Bridge Circuits
• Diode Exhibits High Speed, with Soft Recovery
• IDSS Specified at Elevated Temperatures
• Avalanche Energy Specified
• Mounting Information for SO−8 Package Provided
• This is a Pb−Free Device
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) (Note 1)
Rating
Symbol Value
Unit
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Drain Current − Continuous @ TA = 25°C
Drain Current − Continuous @ TA = 100°C
Drain Current − Single Pulse (tp ≤ 10 ms)
Total Power Dissipation @ TA = 25°C
(Note 2)
Derate above 25°C
VDSS
VGS
ID
ID
IDM
PD
25 Vdc
± 20 Vdc
2.5 Adc
1.7
13 Apk
2.0 W
16 mW/°C
Operating and Storage Temperature Range
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 20 Vdc, VGS = 10 Vdc, Peak
IL = 7.0 Apk, L = 10 mH, RG = 25 W)
Thermal Resistance, Junction−to−Ambient
(Note 2)
TJ, Tstg
EAS
RqJA
−55 to 150
245
62.5
°C
mJ
°C/W
Maximum Lead Temperature for Soldering
Purposes, 0.0625″ from case for 10 sec.
TL
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Negative sign for P−Channel device omitted for clarity.
2. Mounted on 2″ square FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided) with
one die operating, 10 sec. max.
http://onsemi.com
2 AMPERES, 25 VOLTS
RDS(on) = 250 mW
P−Channel
D
G
S
8
1
SO−8, Dual
CASE 751
STYLE 11
MARKING
DIAGRAM
8
F2PO2
AYWW G
G
1
F2P02 = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
PIN ASSIGNMENT
Source−1
Gate−1
Source−2
Gate−2
18
27
36
45
Top View
Drain−1
Drain−1
Drain−2
Drain−2
ORDERING INFORMATION
Device
Package
Shipping†
MMDF2P02ER2G SO−8 2500 Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2011
October, 2011 − Rev. 9
1
Publication Order Number:
MMDF2P02E/D
1 Page MMDF2P02E
TYPICAL ELECTRICAL CHARACTERISTICS
4
VGS = 10 7 V
5 V 4.7 V
TJ = 25°C
4.5 V
3
4.3 V
2 4.1 V
3.9 V
1
3.7 V
3.5 V
3.3 V
0
0 0.4 0.8 1.2 1.6
2
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
0.6
ID = 1 A
0.5 TJ = 25°C
0.4
0.3
0.2
0.1
0
3 4 5 6 7 8 9 10
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 3. On−Resistance versus
Gate−to−Source Voltage
2.0
VGS = 10 V
ID = 2 A
1.5
1.0
4
VDS ≥ 10 V
3
2
1
100°C
25°C
TJ = -55°C
0
2.5 3 3.5 4
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.6
TJ = 25°C
0.5
4.5
0.4
0.3 VGS = 4.5
0.2
10 V
0.1
0 0.5 1 1.5 2
ID, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
100
VGS = 0 V
TJ = 125°C
10
0.5
0
- 50 - 25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
100°C
1
0 4 8 12 16 20
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−to−Source Leakage Current
versus Voltage
http://onsemi.com
3
3Pages MMDF2P02E
100
VGS = 20 V
SINGLE PULSE
10 TC = 25°C
Mounted on 2″ sq. FR4 board (1″ sq. 2 oz. Cu 0.06″
thick single sided) with one die operating, 10s max.
100 ms 10 ms
10 ms
1 dc
0.1
0.01
0.1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1
10
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 12. Maximum Rated Forward Biased
Safe Operating Area
100
280
I pk = 7 A
240
200
160
120
80
40
0
25 50 75 100 125 150
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 13. Maximum Avalanche Energy versus
Starting Junction Temperature
TYPICAL ELECTRICAL CHARACTERISTICS
10
1 D = 0.5
0.2
0.1
0.1 0.05
0.02
0.01
0.01
0.001
1.0E-05
SINGLE PULSE
1.0E-04
1.0E-03
Normalized to qja at 10s.
Chip 0.0175 W 0.0710 W 0.2706 W 0.5776 W 0.7086 W
0.0154 F 0.0854 F 0.3074 F 1.7891 F 107.55 F Ambient
1.0E-02
1.0E-01
t, TIME (s)
1.0E+00
Figure 14. Thermal Response
1.0E+01
1.0E+02
1.0E+03
IS
tp
di/dt
trr
ta tb
0.25 IS
IS
TIME
Figure 15. Diode Reverse Recovery Waveform
http://onsemi.com
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