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MMDF2P02E の電気的特性と機能

MMDF2P02EのメーカーはON Semiconductorです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 MMDF2P02E
部品説明 Power MOSFET ( Transistor )
メーカ ON Semiconductor
ロゴ ON Semiconductor ロゴ 




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MMDF2P02E Datasheet, MMDF2P02E PDF,ピン配置, 機能
MMDF2P02E
Power MOSFET
2 Amps, 25 Volts
PChannel SO8, Dual
These miniature surface mount MOSFETs feature ultra low RDS(on)
and true logic level performance. They are capable of withstanding
high energy in the avalanche and commutation modes and the
draintosource diode has a low reverse recovery time. These devices
are designed for use in low voltage, high speed switching applications
where power efficiency is important. Typical applications are dcdc
converters, and power management in portable and battery powered
products such as computers, printers, cellular and cordless phones.
They can also be used for low voltage motor controls in mass storage
products such as disk drives and tape drives. The avalanche energy is
specified to eliminate the guesswork in designs where inductive loads
are switched and offer additional safety margin against unexpected
voltage transients.
Features
Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life
Logic Level Gate Drive Can Be Driven by Logic ICs
Miniature SO8 Surface Mount Package Saves Board Space
Diode Is Characterized for Use In Bridge Circuits
Diode Exhibits High Speed, with Soft Recovery
IDSS Specified at Elevated Temperatures
Avalanche Energy Specified
Mounting Information for SO8 Package Provided
This is a PbFree Device
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) (Note 1)
Rating
Symbol Value
Unit
DraintoSource Voltage
GatetoSource Voltage Continuous
Drain Current Continuous @ TA = 25°C
Drain Current Continuous @ TA = 100°C
Drain Current Single Pulse (tp 10 ms)
Total Power Dissipation @ TA = 25°C
(Note 2)
Derate above 25°C
VDSS
VGS
ID
ID
IDM
PD
25 Vdc
± 20 Vdc
2.5 Adc
1.7
13 Apk
2.0 W
16 mW/°C
Operating and Storage Temperature Range
Single Pulse DraintoSource Avalanche
Energy Starting TJ = 25°C
(VDD = 20 Vdc, VGS = 10 Vdc, Peak
IL = 7.0 Apk, L = 10 mH, RG = 25 W)
Thermal Resistance, JunctiontoAmbient
(Note 2)
TJ, Tstg
EAS
RqJA
55 to 150
245
62.5
°C
mJ
°C/W
Maximum Lead Temperature for Soldering
Purposes, 0.0625from case for 10 sec.
TL
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Negative sign for PChannel device omitted for clarity.
2. Mounted on 2square FR4 board (1sq. 2 oz. Cu 0.06thick single sided) with
one die operating, 10 sec. max.
http://onsemi.com
2 AMPERES, 25 VOLTS
RDS(on) = 250 mW
PChannel
D
G
S
8
1
SO8, Dual
CASE 751
STYLE 11
MARKING
DIAGRAM
8
F2PO2
AYWW G
G
1
F2P02 = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = PbFree Package
(Note: Microdot may be in either location)
PIN ASSIGNMENT
Source1
Gate1
Source2
Gate2
18
27
36
45
Top View
Drain1
Drain1
Drain2
Drain2
ORDERING INFORMATION
Device
Package
Shipping
MMDF2P02ER2G SO8 2500 Tape & Reel
(PbFree)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2011
October, 2011 Rev. 9
1
Publication Order Number:
MMDF2P02E/D

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MMDF2P02E pdf, ピン配列
MMDF2P02E
TYPICAL ELECTRICAL CHARACTERISTICS
4
VGS = 10 7 V
5 V 4.7 V
TJ = 25°C
4.5 V
3
4.3 V
2 4.1 V
3.9 V
1
3.7 V
3.5 V
3.3 V
0
0 0.4 0.8 1.2 1.6
2
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. OnRegion Characteristics
0.6
ID = 1 A
0.5 TJ = 25°C
0.4
0.3
0.2
0.1
0
3 4 5 6 7 8 9 10
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 3. OnResistance versus
GatetoSource Voltage
2.0
VGS = 10 V
ID = 2 A
1.5
1.0
4
VDS 10 V
3
2
1
100°C
25°C
TJ = -55°C
0
2.5 3 3.5 4
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.6
TJ = 25°C
0.5
4.5
0.4
0.3 VGS = 4.5
0.2
10 V
0.1
0 0.5 1 1.5 2
ID, DRAIN CURRENT (AMPS)
Figure 4. OnResistance versus Drain Current
and Gate Voltage
100
VGS = 0 V
TJ = 125°C
10
0.5
0
- 50 - 25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. OnResistance Variation with
Temperature
100°C
1
0 4 8 12 16 20
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 6. DraintoSource Leakage Current
versus Voltage
http://onsemi.com
3


3Pages


MMDF2P02E 電子部品, 半導体
MMDF2P02E
100
VGS = 20 V
SINGLE PULSE
10 TC = 25°C
Mounted on 2sq. FR4 board (1sq. 2 oz. Cu 0.06
thick single sided) with one die operating, 10s max.
100 ms 10 ms
10 ms
1 dc
0.1
0.01
0.1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1
10
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 12. Maximum Rated Forward Biased
Safe Operating Area
100
280
I pk = 7 A
240
200
160
120
80
40
0
25 50 75 100 125 150
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 13. Maximum Avalanche Energy versus
Starting Junction Temperature
TYPICAL ELECTRICAL CHARACTERISTICS
10
1 D = 0.5
0.2
0.1
0.1 0.05
0.02
0.01
0.01
0.001
1.0E-05
SINGLE PULSE
1.0E-04
1.0E-03
Normalized to qja at 10s.
Chip 0.0175 W 0.0710 W 0.2706 W 0.5776 W 0.7086 W
0.0154 F 0.0854 F 0.3074 F 1.7891 F 107.55 F Ambient
1.0E-02
1.0E-01
t, TIME (s)
1.0E+00
Figure 14. Thermal Response
1.0E+01
1.0E+02
1.0E+03
IS
tp
di/dt
trr
ta tb
0.25 IS
IS
TIME
Figure 15. Diode Reverse Recovery Waveform
http://onsemi.com
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共有リンク

Link :


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