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IXBT6N170 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IXBT6N170
部品説明 BIMOSFET Monolithic Bipolar MOS Transistor
メーカ IXYS
ロゴ IXYS ロゴ 

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IXBT6N170 Datasheet, IXBT6N170 PDF,ピン配置, 機能
High Voltage, High Gain
BIMOSFETTM Monolithic
Bipolar MOS Transistor
IXBH6N170
IXBT6N170
VCES =
IC90 =
VCE(sat)
1700V
6A
3.4V
Symbol
VCES
VCGR
VGES
VGEM
IC25
IC90
ICM
SSOA
(RBSOA)
PC
TJ
TJM
Tstg
TTLSOLD
Md
Weight
Test Conditions
TC = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1MΩ
Continuous
Transient
TC = 25°C
TC = 90°C
TC = 25°C, 1ms
VGE = 15V, TVJ = 125°C, RG = 24Ω
Clamped inductive load
TC = 25°C
1.6mm (0.062 in.) from case for 10s
Plastic body for 10 seconds
Mounting torque (TO-247)
TO-247
TO-268
Maximum Ratings
1700
1700
V
V
± 20
± 30
V
V
12 A
6A
36 A
ICM = 16
VCES 1350
75
A
V
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300
260
1.13/10
°C
°C
Nm/lb.in.
6g
4g
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
BVCES
IC = 250μA, VCE = VGE
VGE(th)
sICES
IGES
VCE(sat)
IC = 250μA, VCE = VGE
VCE = 0.8 VCES
VGE = 0V
TJ = 125°C
VCE = 0V, VGE = ±20V
IC = 6A, VGE = 15V, Note 1
TJ = 125°C
Characteristic Values
Min. Typ. Max.
1700
V
2.5 5.5 V
10 μA
100 μA
±100 nA
2.84 3.40
3.46
V
V
TO-247 (IXBH)
G
CE
TO-268 (IXBT)
C (TAB)
GE
C (TAB)
G = Gate
E = Emitter
C = Collector
TAB = Collector
Features
z High blocking voltage
z Integrated Anti-parallel diode
z International standard packages
z Low conduction losses
Advantages
z Low gate drive requirement
z High power density
Applications:
z Switched-mode and resonant-mode
power supplies
z Uninterruptible power supplies (UPS)
z Laser generator
z Capacitor discharge circuit
z AC switches
© 2008 IXYS CORPORATION, All rights reserved
DS99004C(10/08)

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BIMOSFET Monolithic Bipolar MOS Transistor

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