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IXBF40N160 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IXBF40N160
部品説明 High Voltage BIMOSFET
メーカ IXYS
ロゴ IXYS ロゴ 



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IXBF40N160 Datasheet, IXBF40N160 PDF,ピン配置, 機能
High Voltage
BIMOSFETTM
in High Voltage ISOPLUS i4-PACTM
Monolithic Bipolar MOS Transistor
IXBF 40N160
IC25 = 28 A
VCES = 1600 V
VCE(sat) = 6.2 V
tf = 40 ns
1
5
IGBT
Symbol
VCES
VGES
IC25
IC90
ICM
VCEK
Ptot
Symbol
V
CE(sat)
VGE(th)
ICES
IGES
td(on)
t
r
td(off)
tf
C
ies
QGon
VF
RthJC
Conditions
TVJ = 25°C to 150°C
TC = 25°C
TC = 90°C
VGE = 15/0 V; RG = 22 Ω; TVJ = 125°C
RBSOA, Clamped inductive load; L = 100 µH
TC = 25°C
Maximum Ratings
1600
± 20
V
V
28 A
16 A
40
0.8VCES
250
A
W
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
I
C
=
20
A;
V
GE
=
15
V;
TVJ
=
25°C
TVJ = 125°C
IC = 2 mA; VGE = VCE
VCE = 0.8VCES; VGE = 0 V; TVJ = 25°C
TVJ = 125°C
VCE = 0 V; VGE = ± 20 V
Inductive load, TVJ = 125°C
VCE = 960 V; IC = 25 A
V
GE
=
15/0
V;
R
G
=
22
Ω
6.2 7.1 V
6.9 V
4 8V
0.4 mA
0.8 mA
500 nA
200 ns
60 ns
300 ns
40 ns
V = 25 V; V = 0 V; f = 1 MHz
CE GE
VCE = 600V; VGE = 15 V; IC = 20 A
(reverse conduction); IF = 20A
3300
130
2.5
pF
nC
V
0.5 K/W
Features
• High Voltage BIMOSFETTM
- substitute for high voltage MOSFETs
with significantly lower voltage drop
- fast switching for high frequency
operation
- reverse conduction capability
• ISOPLUS i4-PACTM
high voltage package
- isolated back surface
- enlarged creepage towards heatsink
- enlarged creepage between high
voltage pins
- application friendly pinout
- high reliability
- industry standard outline
Applications
• switched mode power supplies
• DC-DC converters
• resonant converters
• lamp ballasts
• laser generators, x ray generators
IXYS reserves the right to change limits, test conditions and dimensions.
© 2006 IXYS All rights reserved
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