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IXBP5N160G PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IXBP5N160G
部品説明 High Voltage BIMOSFET
メーカ IXYS
ロゴ IXYS ロゴ 



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IXBP5N160G Datasheet, IXBP5N160G PDF,ピン配置, 機能
High Voltage
BIMOSFETTM
Monolithic Bipolar MOS Transistor
IXBP 5N160 G
IXBH 5N160 G
IC25 = 5.7 A
VCES = 1600 V
VCE(sat) = 4.9 V
tf = 70 ns
Preliminary data sheet
C TO-220 AB (IXBP)
G
C
E
C (TAB)
G
TO-247 AD (IXBH)
E
G
C C (TAB)
E
A = Anode, C = Cathode , TAB = Cathode
IGBT
Symbol
VCES
VGES
IC25
IC90
ICM
VCEK
Ptot
Symbol
VCE(sat)
V
GE(th)
ICES
IGES
td(on)
t
r
td(off)
tf
C
ies
QGon
VF
RthJC
Conditions
TVJ = 25°C to 150°C
TC = 25°C
TC = 90°C
VGE
=
10/0
V;
R
G
=
47
;
TVJ
=
125°C
RBSOA, Clamped inductive load; L = 100 µH
TC = 25°C
Maximum Ratings
1600
V
± 20
V
5.7 A
3.5 A
6
0.8VCES
68
A
W
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
IC = 3 A; VGE = 15 V; TVJ = 25°C
TVJ = 125°C
I = 0.3 mA; V = V
C GE CE
VGE = 0 V; VCE = VCES; TVJ = 25°C
VCE = 0.8VCES; TVJ = 125°C
VCE = 0 V; VGE = ± 20 V
Inductive load, TVJ = 125°C
VCE = 960 V; IC = 3 A
VGE = 10/0 V; RG = 47
4.9 7.2 V
5.6 V
3.5 5.5 V
150 µA
50 µA
100 nA
140 ns
200 ns
120 ns
70 ns
V = 25 V; V = 0 V; f = 1 MHz
CE GE
VCE = 600V; VGE = 10 V; IC = 3 A
(reverse conduction); IF = 3 A
325 pF
26 nC
6V
1.85 K/W
Features
• High Voltage BIMOSFETTM
- substitute for high voltage MOSFETs
with significantly lower voltage drop
- MOSFET compatible control
10 V turn on gate voltage
- fast switching for high frequency
operation
- reverse conduction capability
• industry standard package
- TO-220AB
- TO-247AD
epoxy meets UL94V-0
Applications
• switched mode power supplies
• DC-DC converters
• resonant converters
• lamp ballasts
• laser generators, x ray generators
IXYS reserves the right to change limits, test conditions and dimensions.
© 2003 IXYS All rights reserved
IXYS Semiconductor GmbH
Edisonstr. 15, D-68623 Lampertheim
Phone: +49-6206-503-0, Fax: +49-6206-503627
1-2
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: (408) 982-0700, Fax: 408-496-0670

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