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PDF IXGH24N170AH1 Data sheet ( Hoja de datos )
| Número de pieza | IXGH24N170AH1 | |
| Descripción | High Voltage IGBT | |
| Fabricantes | IXYS | |
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High Voltage
IGBTs w/Diode
Preliminary Technical Information
IXGH24N170AH1
IXGT24N170AH1
VCES =
IC25 =
VCE(sat) ≤
tfi(typ) =
1700V
24A
6.0V
40ns
TO-247 (IXGH)
Symbol
VCES
VCGR
VGES
VGEM
IICC2950
ICM
SSOA
(RBSOA)
tSC
PC
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
Maximum Ratings
TC = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1MΩ
Continuous
Transient
1700
1700
± 20
± 30
V
V
V
V
TTCC
= 25°C
= 90°C
TC = 25°C, 1ms
24
16
75
VCGlaEm=p1e5dVI,nTdVuJc=tiv1e25L°oCa,dRG = 10Ω
0.I8CM•
= 50
VCES
TJ = 125°C, VCE = 1200V, VGE = 15V, RG = 22Ω
10
TC = 25°C
250
-55 ... +150
150
-55 ... +150
A
A
A
A
V
μs
W
°C
°C
°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10 seconds
300 °C
260 °C
Mounting Torque (TO-247)
1.13/10
Nm/lb.in.
TO-247
TO-268
6g
4g
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
BVCES
IC = 250μA, VGE = 0V
VGE(th)
IC = 250μA, VCE = VGE
ICES VCE = 0.8 • VCES, VGE = 0V
IGES
VCE(sat)
VCE = 0V, VGE = ± 20V
IC = 16A, VGE = 15V, Note 1
Characteristic Values
Min.
Typ.
Max.
1700
3.0 5.0
V
V
TJ = 125°C
100 μA
1.5 mA
±100 nA
4.5 6.0 V
TJ = 125°C
4.8
V
G
CE
C (TAB)
TO-268 (IXGT)
GE
C (TAB)
G = Gate
E = Emitter
C = Collector
TAB = Collector
Features
z Optimized for Low Conduction and
Switching Losses
z Anti-Parallel Ultra Fast Diode
z International Standard Packages
Advantages
z High Power Density
z Low Gate Drive Requirement
Applications
z Power Inverters
z UPS
z Motor Drives
z SMPS
z PFC Circuits
z Welding Machines
© 2009 IXYS CORPORATION, All Rights Reserved
DS99413A(05/09)
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet IXGH24N170AH1.PDF ] | |
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