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IXGX60N60C2D1 の電気的特性と機能

IXGX60N60C2D1のメーカーはIXYSです、この部品の機能は「IGBT ( Insulated Gate Bipolar Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IXGX60N60C2D1
部品説明 IGBT ( Insulated Gate Bipolar Transistor )
メーカ IXYS
ロゴ IXYS ロゴ 




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IXGX60N60C2D1 Datasheet, IXGX60N60C2D1 PDF,ピン配置, 機能
HiPerFASTTM
IGBT with Diode
IXGK 60N60C2D1
IXGX 60N60C2D1
C2-Class High Speed IGBTs
V
I CES
VC25
t CE(sat)
fi(typ)
= 600 V
= 75 A
= 2.5 V
= 35 ns
Symbol
Test Conditions
VCES
VCGR
VGES
VGEM
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 MΩ
Continuous
Transient
IC25 TC = 25°C (limited by leads)
IC110
TC = 110°C
IF110 TC = 110°C
ICM TC = 25°C, 1 ms
SSOA
(RBSOA)
PC
TJ
TJM
Tstg
Md
Weight
VGE = 15 V, TVJ = 125°C, RG = 10 Ω
Clamped inductive load @ VCE 600 V
TC = 25°C
Mounting torque, TO-264
TO-264
PLUS247
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Ratings
600 V
600 V
±20 V
±30 V
75 A
60 A
48 A
300 A
ICM = 100
A
480 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
1.13/10 Nm/lb.in.
10 g
6g
300 °C
Symbol
Test Conditions
VGE(th)
ICES
IGES
VCE(sat)
IC = 250 μA, VCE = VGE
VCE = VCES
VGE = 0 V
VCE = 0 V, VGE = ±20 V
IC = 50 A, VGE = 15 V
Note 1
Characteristic Values
(TJ
=
25°C
unless
Min.
otherwise specified)
Typ. Max.
3.0 5.0 V
TJ = 25°C
TJ = 125°C
650 μA
5 mA
±100 nA
TJ = 25°C
TJ = 125°C
2.1 2.5
1.8
V
V
TO-264 AA
(IXGK)
G
CE
PLUS247
(IXGX)
(TAB)
G = Gate C = Collector
E = Emitter Tab = Collector
(TAB)
Features
Very high frequency IGBT and
anti-parallel FRED in one package
Square RBSOA
High current handling capability
MOS Gate turn-on for drive simplicity
Fast Recovery Epitaxial Diode (FRED)
with soft recovery and low IRM
Applications
Switch-mode and resonant-mode
power supplies
Uninterruptible power supplies (UPS)
DC choppers
AC motor speed control
DC servo and robot drives
Advantages
Space savings (two devices in one
package)
Easy to mount with 1 screw
© 2006 IXYS All rights reserved
DS99044B(11/05)

1 Page





IXGX60N60C2D1 pdf, ピン配列
100
90
80
70
60
50
40
30
20
10
0
0
Fig. 1. Output Characteristics
@ 25ºC
VGE = 15V
13V
11V
9V
7V
5V
0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7
VCE - Volts
3
100
90
80
70
60
50
40
30
20
10
0
0
Fig. 3. Output Characteristics
@ 125ºC
VGE = 15V
13V
11V
9V
7V
5V
0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7
VCE - Volts
3
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter Voltage
5.0
4.5 TJ = 25ºC
4.0
I C = 100A
50A
3.5 25A
3.0
2.5
2.0
1.5
5 6 7 8 9 10 11 12 13 14 15
VGE - Volts
© 2006 IXYS All rights reserved
IXGK 60N60C2D1
IXGX 60N60C2D1
Fig. 2. Exteded Output Characteristics
@ 25ºC
300
270 VGE = 15V
13V
240
210
11V
180
150
9V
120
90
60
30 7V
0
0 2 4 6 8 10 12 14
VCE - Volts
16
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
-50
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
VGE = 15V
I C = 100A
I C = 50A
I C = 25A
-25 0 25 50 75 100 125 150
TJ - Degrees Centigrade
Fig. 6. Input Admittance
200
180
160
140
120
100
80 TJ = 125ºC
60 25ºC
- 40ºC
40
20
0
4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 9 9.5
VGE - Volts


3Pages


IXGX60N60C2D1 電子部品, 半導体
Fig. 19. Reverse-Bias Safe Operating Area
110
100
90
80
70
60
50
40
30 TJ = 125ºC
20 RG = 10Ω
dV / dT < 10V / ns
10
0
100 150 200 250 300 350 400 450 500 550 600 650
VCE - Volts
IXGK 60N60C2D1
IXGX 60N60C2D1
Fig. 20. Maximum Transient Thermal
Resistance
1.00
0.10
0.01
0.0001
0.001
0.01 0.1
Pulse Width- Seconds
1
10
IXYS reserves the right to change limits, test conditions, and dimensions.

6 Page



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部品番号部品説明メーカ
IXGX60N60C2D1

IGBT ( Insulated Gate Bipolar Transistor )

IXYS
IXYS


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