IXGH50N60C2 Datasheet PDF - IXYS
| Part Number | IXGH50N60C2 | |
| Description | IGBT ( Insulated Gate Bipolar Transistor ) | |
| Manufacturers | IXYS | |
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HiPerFASTTM
High Speed IGBT
C2-Class
IXGH50N60C2
IXGT50N60C2
VCES = 600V
IC110 = 50A
VCE(sat) 2.7V
tfi(typ) = 48ns
Symbol
VCES
VCGR
VGES
VGEM
IICC12150
ICM
SSOA
(RBSOA)
PC
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1M
Continuous
Transient
TTCC
= 25°C (Limited by Leads)
= 110°C
TC = 25°C, 1ms
VGE = 15V, TVJ = 125°C, RG = 10
Clamped Inductive Load
TC = 25°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque
TO-268
TO-247
Maximum Ratings
600 V
600 V
±20 V
±30 V
75 A
50 A
300 A
ICM = 80
@VCE VCES
400
A
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300 °C
260 °C
1.13/10 Nm/lb.in
4g
6g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVCES
IC = 250A, VGE = 0V
VGE(th)
IC = 250A, VCE = VGE
ICES VCE = VCES, VGE = 0V
TJ = 125C
IGES VCE = 0V, VGE = 20V
VCE(sat)
IC = 40A, VGE = 15V, Note 1
TJ = 125C
Characteristic Values
Min. Typ. Max.
600 V
3.0 5.5 V
50 A
1 mA
100 nA
2.7 V
1.8 V
TO-268 (IXGT)
G
E
C (Tab)
TO-247 (IXGH)
GCE
C (Tab)
G = Gate
E = Emitter
C = Collector
Tab = Collector
Features
Very High Frequency IGBT
Square RBSOA
High Current Handling Capability
International Standard Packages
Advantages
High Power Density
Low Gate Drive Requirement
Applications
Switch-Mode and Resonant-Mode
Power Supplies
Uninterruptible Power Supplies (UPS)
PFC Circuits
AC Motor Drives
DC Servo & Robot Drives
DC Choppers
© 2014 IXYS CORPORATION, All Rights Reserved
DS99147A(02/14)
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Fig. 13. Dependence of Turn-Off Sw itching
Tim e on Tem perature
200
180
td(off)
tfi - - - - -
160 RG = 2Ω
140
VGE = 15V
VCE = 480V
IC = 20A
120 IC = 80A
100
80 IC = 40A
60
40
20
25
IC = 20A
50 75 100
TJ - Degrees Centigrade
125
IXGH50N60C2
IXGT50N60C2
Fig. 14. Reverse-Bias
Safe Operating Area
90
80
70
60
50
40
30
20
TJ = 125ºC
RG = 10Ω
10 dv/dt <
0
100 200 300 400
V C E - Volts
500
600
16
14
12
10
8
6
4
2
0
0
Fig. 15. Gate Charge
VCE = 300V
IC = 40A
IG = 10mA
30 60 90
Q G - nanoCoulombs
120
150
10000
1000
Fig. 16. Capacitance
f = 1 MHz
Cies
100 Coes
Cres
10
0 5 10 15 20 25 30 35 40
VC E - Volts
Fig. 17. Maxim um Transient Therm al Resistance
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
1
10
Pulse Width - milliseconds
100
1000
© 2014 IXYS CORPORATION, All Rights Reserved
IXYS REF: IXG_50N60C2(62) 02-18-04
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| Part Number | Description | MFRS |
| IXGH50N60C2 | The function is IGBT ( Insulated Gate Bipolar Transistor ). IXYS | |
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