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IXGT40N120B2D1 の電気的特性と機能

IXGT40N120B2D1のメーカーはIXYSです、この部品の機能は「High Voltage IGBTs」です。


製品の詳細 ( Datasheet PDF )

部品番号 IXGT40N120B2D1
部品説明 High Voltage IGBTs
メーカ IXYS
ロゴ IXYS ロゴ 




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IXGT40N120B2D1 Datasheet, IXGT40N120B2D1 PDF,ピン配置, 機能
High Voltage IGBTs
w/Diode
IXGH40N120B2D1
IXGT40N120B2D1
VCES = 1200V
IC110 = 40A
VCE(sat) 3.5V
tfi(typ) = 140ns
Symbol
VCES
VCGR
VGES
VGEM
IICC12150
IF110
ICM
SSOA
(RBSOA)
PC
TJ
TJM
Tstg
TTLSOLD
Md
Weight
Test Conditions
TC = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1MΩ
Continuous
Transient
TTCC
=
=
25°C (Limited
110°C
by
Lead)
TC = 110°C
TC = 25°C, 1ms
VGE = 15V, TVJ = 125°C, RG = 2Ω
Clamped Inductive Load
TC = 25°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10 seconds
Mounting Torque (TO-247)
TO-247
TO-268
Maximum Ratings
1200
1200
± 20
± 30
75
40
25
200
V
V
V
V
A
A
A
A
ICM = 80
@ 0.8 VCES
380
-55 ... +150
150
-55 ... +150
300
260
1.13/10
A
V
W
°C
°C
°C
°C
°C
Nm/lb.in.
6g
4g
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
VGE(th)
IC = 250μA, VCE = VGE
ICES VCE = VCES, VGE = 0V
IGES
VCE(sat)
VCE = 0V, VGE = ± 20V
IC = 40A, VGE = 15V, Note 1
Characteristic Values
Min. Typ. Max.
3.0 5.0 V
TJ = 125°C
100 μA
3 mA
±100 nA
2.9 3.5 V
TO-247 (IXGH)
G
CE
TO-268 (IXGT)
C (TAB)
GE
C (TAB)
G = Gate C = Collector
E = Emitter TAB = Collector
Features
z International Standard Packages
z IGBT and Anti-Parallel FRED for
Resonant Power Supplies
- Induction Heating
- Rice Cookers
z Square RBSOA
z Fast Recovery Expitaxial Diode
(FRED)
- Soft Recovery with Low IRM
Advantages
z High Power Density
z Low Gate Drive Requirement
© 2009 IXYS CORPORATION, All RrightsRreserved
DS99555B(02/09)

1 Page





IXGT40N120B2D1 pdf, ピン配列
80
70
60
50
40
30
20
10
0
0.0
Fig. 1. Output Characteristics
@ 25ºC
VGE = 15V
13V
11V
9V
7V
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VCE - Volts
4.5
Fig. 3. Output Characteristics
@ 125ºC
80
VGE = 15V
70 13V
11V
60
50 9V
40
7V
30
20
10 5V
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
VCE - Volts
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter Voltage
7
TJ = 25ºC
6
I C = 80A
40A
5 20A
4
3
2
5 6 7 8 9 10 11 12 13 14 15
VGE - Volts
IXGH40N120B2D1
IXGT40N120B2D1
250
225
200
175
150
125
100
75
50
25
0
0
Fig. 2. Extended Output Characteristics
@ 25ºC
VGE = 15V
13V
11V
9V
7V
2 4 6 8 10 12 14 16 18 20
VCE - Volts
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
VGE = 15V
I C = 80A
I C = 40A
I C = 20A
-25 0 25 50 75 100 125 150
TJ - Degrees Centigrade
Fig. 6. Input Admittance
120
100
80
60
40 TJ = 125ºC
25ºC
20 - 40ºC
0
4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0
VGE - Volts
© 2009 IXYS CORPORATION, All RrightsRreserved


3Pages


IXGT40N120B2D1 電子部品, 半導体
Fig. 18. Inductive Turn-on Switching Times
vs. Gate Resistance
130 30
120 29
110
100 t r
td(on) - - - -
90 TJ = 125ºC, VGE = 15V
VCE = 960V
80
70
I C = 80A
I C = 40A
28
27
26
25
24
60 23
50 22
40 21
30
I C = 20A
20
20 19
2 3 4 5 6 7 8 9 10
RG - Ohms
Fig. 20. Inductive Turn-on Switching Times
vs. Collector Current
120
110 t r
td(on) - - - -
RG = 2, VGE = 15V
100 25ºC < TJ < 125ºC
90 VCE = 960V
24
23
80 22
70
60 21
50
40 20
30
20 19
20 25 30 35 40 45 50 55 60 65 70 75 80
IC - Amperes
IXGH40N120B2D1
IXGT40N120B2D1
Fig. 19. Inductive Turn-on Switching Times
vs. Junction Temperature
120 24
110
100
90 t r
td(on) - - - -
80 RG = 2, VGE = 15V
70 VCE = 960V
60
I C = 80A
23
22
I C = 40A
21
50
40 20
30
I C = 20A
20 19
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXYS REF: G_40N120B2(6ZC) 3-30-06

6 Page



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部品番号部品説明メーカ
IXGT40N120B2D1

High Voltage IGBTs

IXYS
IXYS


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