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IXGT40N120B2D1 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IXGT40N120B2D1
部品説明 High Voltage IGBTs
メーカ IXYS
ロゴ IXYS ロゴ 



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IXGT40N120B2D1 Datasheet, IXGT40N120B2D1 PDF,ピン配置, 機能
High Voltage IGBTs
w/Diode
IXGH40N120B2D1
IXGT40N120B2D1
VCES = 1200V
IC110 = 40A
VCE(sat) 3.5V
tfi(typ) = 140ns
Symbol
VCES
VCGR
VGES
VGEM
IICC12150
IF110
ICM
SSOA
(RBSOA)
PC
TJ
TJM
Tstg
TTLSOLD
Md
Weight
Test Conditions
TC = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1MΩ
Continuous
Transient
TTCC
=
=
25°C (Limited
110°C
by
Lead)
TC = 110°C
TC = 25°C, 1ms
VGE = 15V, TVJ = 125°C, RG = 2Ω
Clamped Inductive Load
TC = 25°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10 seconds
Mounting Torque (TO-247)
TO-247
TO-268
Maximum Ratings
1200
1200
± 20
± 30
75
40
25
200
V
V
V
V
A
A
A
A
ICM = 80
@ 0.8 VCES
380
-55 ... +150
150
-55 ... +150
300
260
1.13/10
A
V
W
°C
°C
°C
°C
°C
Nm/lb.in.
6g
4g
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
VGE(th)
IC = 250μA, VCE = VGE
ICES VCE = VCES, VGE = 0V
IGES
VCE(sat)
VCE = 0V, VGE = ± 20V
IC = 40A, VGE = 15V, Note 1
Characteristic Values
Min. Typ. Max.
3.0 5.0 V
TJ = 125°C
100 μA
3 mA
±100 nA
2.9 3.5 V
TO-247 (IXGH)
G
CE
TO-268 (IXGT)
C (TAB)
GE
C (TAB)
G = Gate C = Collector
E = Emitter TAB = Collector
Features
z International Standard Packages
z IGBT and Anti-Parallel FRED for
Resonant Power Supplies
- Induction Heating
- Rice Cookers
z Square RBSOA
z Fast Recovery Expitaxial Diode
(FRED)
- Soft Recovery with Low IRM
Advantages
z High Power Density
z Low Gate Drive Requirement
© 2009 IXYS CORPORATION, All RrightsRreserved
DS99555B(02/09)

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