|
|
PDF IXGT32N90B2D1 Data sheet ( Hoja de datos )
| Número de pieza | IXGT32N90B2D1 | |
| Descripción | IGBT | |
| Fabricantes | IXYS | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de IXGT32N90B2D1 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
|
No Preview Available !
Advance Technical Information
HiPerFASTTM IGBT
with Fast Diode
B2-Class
High Speed IGBTs with
Ultrafast Diode
IXGH 32N90B2D1
IXGT 32N90B2D1
V
I CES
VC25
t CE(sat)
fi typ
= 900 V
= 64 A
= 2.7 V
= 150 ns
Symbol
Test Conditions
VCES
VCGR
VGES
VGEM
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 MW
Continuous
Transient
IC25
IC110
ICM
SSOA
(RBSOA)
TC = 25°C
TC = 110°C
TC = 25°C, 1 ms
VGE= 15 V, TVJ = 125°C, RG = 10 Ω
Clamped inductive load: VCL < 600V
PC TC = 25°C
TJ
TJM
Tstg
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Md
Weight
Mounting torque (TO-247)
Maximum Ratings
900 V
900 V
±20 V
±30 V
64 A
32 A
200 A
ICM = 64
A
300
-55 ... +150
150
-55 ... +150
300
W
°C
°C
°C
°C
TO-247
TO-268
1.13/10 Nm/lb.in.
6g
4g
Symbol
VGE(th)
ICES
IGES
VCE(sat)
Test Conditions
IC = 250 mA, VCE = VGE
VCE = VCES
VGE = 0 V
VCE = 0 V, VGE = ± 20 V
IC = IC110, VGE = 15 V
Characteristic Values
(TJ
=
25°C
unless otherwise specified)
min. typ. max.
3.0 5.0 V
TJ = 150°C
TJ = 125°C
300 μA
1.5 mA
± 100 nA
2.2 2.7 V
2.1 V
TO-247 (IXGH)
G
CE
TO-268 (IXGT)
G
E
C (TAB)
C (TAB)
G = Gate
E = Emitter
C = Collector
TAB = Collector
Features
• High frequency IGBT
• High current handling capability
• MOS Gate turn-on
- drive simplicity
Applications
• PFC circuits
• Uninterruptible power supplies (UPS)
• Switched-mode and resonant-mode
power supplies
• AC motor speed control
• DC servo and robot drives
• DC choppers
Advantages
• High power density
• Very fast switching speeds for high
frequency applications
© 2005 IXYS All rights reserved
DS99392(12/05)
1 page  
Fig. 12. Dependence of Turn-off
Energy Loss on Gate Resistance
18
16
14 IC = 64A
12 TJ = 125º C
10 VGE = 15V
8 VCE = 720V
6
IC = 32A
4
2
0
0
IC = 16A
5 10 15 20 25 30 35 40 45 50
R G - Ohms
Fig. 14. Dependence of Turn-off
Energy Loss on Collector Current
16
14 RG =5Ω
VGE = 15V
12 VCE = 720V
10
TJ = 125ºC
8
6
4 TJ = 25ºC
2
0
10 20 30 40 50 60 70
I C - Amperes
Fig. 16. Dependence of Turn-off
Energy Loss on Tem perature
16
14 RG =5Ω
VGE = 15V
12 VCE = 720V
10
IC = 64A
8
6 IC = 32A
4
2
IC = 16A
0
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
© 2005 IXYS All rights reserved
IXGH 32N90B2D1
IXGT 32N90B2D1
Fig. 13. Dependence of Turn-on
Energy Loss on Gate Resistance
16
14
TJ = 125º C
12
VGE = 15V
10 VCE = 720V
8
IC = 64A
6
4
2
0
0
IC = 32A
IC = 16A
5 10 15 20 25 30 35 40 45 50
R G - Ohms
Fig. 15. Dependence of Turn-on
Energy Loss on Collector Current
9
8 RG =5Ω
TJ = 125ºC
7 VGE = 15V
VCE = 720V
6
5
4
TJ = 25ºC
3
2
1
0
10 20 30 40 50 60 70
I C - Amperes
Fig. 17. Dependence of Turn-on
Energy Loss on Tem perature
10
9 RG = 5Ω
8 VGE = 15V
7 VCE = 720V
IC = 64A
6
5
4 IC = 32A
3
2
1 IC = 16A
0
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet IXGT32N90B2D1.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| IXGT32N90B2D1 | IGBT | IXYS |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |