DataSheet.jp

IXGT32N90B2D1 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IXGT32N90B2D1
部品説明 IGBT
メーカ IXYS
ロゴ IXYS ロゴ 



Total 7 pages
		

No Preview Available !

IXGT32N90B2D1 Datasheet, IXGT32N90B2D1 PDF,ピン配置, 機能
Advance Technical Information
HiPerFASTTM IGBT
with Fast Diode
B2-Class
High Speed IGBTs with
Ultrafast Diode
IXGH 32N90B2D1
IXGT 32N90B2D1
V
I CES
VC25
t CE(sat)
fi typ
= 900 V
= 64 A
= 2.7 V
= 150 ns
Symbol
Test Conditions
VCES
VCGR
VGES
VGEM
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 MW
Continuous
Transient
IC25
IC110
ICM
SSOA
(RBSOA)
TC = 25°C
TC = 110°C
TC = 25°C, 1 ms
VGE= 15 V, TVJ = 125°C, RG = 10 Ω
Clamped inductive load: VCL < 600V
PC TC = 25°C
TJ
TJM
Tstg
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Md
Weight
Mounting torque (TO-247)
Maximum Ratings
900 V
900 V
±20 V
±30 V
64 A
32 A
200 A
ICM = 64
A
300
-55 ... +150
150
-55 ... +150
300
W
°C
°C
°C
°C
TO-247
TO-268
1.13/10 Nm/lb.in.
6g
4g
Symbol
VGE(th)
ICES
IGES
VCE(sat)
Test Conditions
IC = 250 mA, VCE = VGE
VCE = VCES
VGE = 0 V
VCE = 0 V, VGE = ± 20 V
IC = IC110, VGE = 15 V
Characteristic Values
(TJ
=
25°C
unless otherwise specified)
min. typ. max.
3.0 5.0 V
TJ = 150°C
TJ = 125°C
300 μA
1.5 mA
± 100 nA
2.2 2.7 V
2.1 V
TO-247 (IXGH)
G
CE
TO-268 (IXGT)
G
E
C (TAB)
C (TAB)
G = Gate
E = Emitter
C = Collector
TAB = Collector
Features
High frequency IGBT
High current handling capability
MOS Gate turn-on
- drive simplicity
Applications
PFC circuits
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
AC motor speed control
DC servo and robot drives
DC choppers
Advantages
High power density
Very fast switching speeds for high
frequency applications
© 2005 IXYS All rights reserved
DS99392(12/05)

1 Page





ページ 合計 : 7 ページ
PDF
ダウンロード
[ IXGT32N90B2D1.PDF ]

共有リンク

Link :

おすすめデータシート

部品番号部品説明メーカ
IXGT32N90B2D1

IGBT

IXYS
IXYS

www.DataSheet.jp    |   2019   |  メール    |   最新    |   Sitemap