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PDF IXGR32N90B2D1 Data sheet ( Hoja de datos )
| Número de pieza | IXGR32N90B2D1 | |
| Descripción | IGBT | |
| Fabricantes | IXYS | |
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Advance Technical Information
HiPerFASTTM IGBT IXGR 32N90B2D1
with Fast Diode
Electrically Isolated Base
V
I CES
VC25
t CE(sat)
fi typ
= 900 V
= 47 A
= 2.9 V
= 150 ns
Symbol
Test Conditions
VCES
VCGR
TJ = 25OC to 150OC
TJ = 25OC to 150OC; RGE = 1 MΩ
VGES
VGEM
Continuous
Transient
IC25
IC110
ICM
TC = 25OC
TC = 110OC
TC = 25OC, 1 ms
SSOA
(RBSOA)
PC
VGE= 15 V, TVJ = 125OC, RG = 10 Ω
Clamped inductive load: VCL < 600V
TC = 25OC
TJ
TJM
Tstg
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
VISOL
FC
Weight
50/60Hz, RMS, T= I minute
Iisol < 1mA
Mounting force
Maximum Ratings
900 V
900 V
±20 V
±30 V
47 A
22 A
200 A
ICM = 64
A
160
-55 ... +150
150
-55 ... +150
300
W
OC
OC
OC
OC
2500
3000
20..120/4.5..26
5
V~
V~
N/lb
g
Symbol
VGE(th)
ICES
IGES
VCE(sat)
Test Conditions
Characteristic Values
(TJ
=
25OC
unless otherwise specified)
min. typ. max.
IC = 250 μA, VCE = VGE
VCE = VCES
VGE = 0 V
VCE = 0 V, VGE = ± 20 V
IC = IT, VGE = 15 V, Note 1
TJ = 150OC
TJ = 125OC
3.0 5.0 V
300 μA
1.5 mA
±100 nA
2.9 V
2.1 V
ISOPLUS247 (IXGR)
E153432
G
CE
G = Gate
E = Emitter
Features
ISOLATED TAB
C = Collector
y Electrically isolated mounting tab
y High frequency IGBT
y High current handling capability
y MOS Gate turn-on
- drive simplicity
Applications
y PFC circuits
y Uninterruptible power supplies (UPS)
y Switched-mode and resonant-mode
power supplies
y AC motor speed control
y DC servo and robot drives
y DC choppers
Advantages
y High power density
y Very fast switching speeds for high
frequency applications
© 2005 IXYS All rights reserved
DS99457(12/05)
1 page  
Fig. 12. Dependence of Turn-off
Energy Loss on Gate Resistance
18
16
14 IC = 64A
12 TJ = 125º C
10 VGE = 15V
8 VCE = 720V
6
IC = 32A
4
2
0
0
IC = 16A
5 10 15 20 25 30 35 40 45 50
R G - Ohms
Fig. 14. Dependence of Turn-off
Energy Loss on Collector Current
16
14 RG =5Ω
VGE = 15V
12 VCE = 720V
10
TJ = 125ºC
8
6
4 TJ = 25ºC
2
0
10 20 30 40 50 60 70
I C - Amperes
Fig. 16. Dependence of Turn-off
Energy Loss on Tem perature
16
14 RG =5Ω
VGE = 15V
12 VCE = 720V
10
IC = 64A
8
6 IC = 32A
4
2
IC = 16A
0
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
© 2005 IXYS All rights reserved
IXGR 32N90B2D1
Fig. 13. Dependence of Turn-on
Energy Loss on Gate Resistance
16
14
TJ = 125º C
12
VGE = 15V
10 VCE = 720V
8
IC = 64A
6
4
2
0
0
IC = 32A
IC = 16A
5 10 15 20 25 30 35 40 45 50
R G - Ohms
Fig. 15. Dependence of Turn-on
Energy Loss on Collector Current
9
8 RG =5Ω
TJ = 125ºC
7 VGE = 15V
VCE = 720V
6
5
4
TJ = 25ºC
3
2
1
0
10 20 30 40 50 60
I C - Amperes
70
Fig. 17. Dependence of Turn-on
Energy Loss on Tem perature
10
9 RG = 5Ω
8 VGE = 15V
7 VCE = 720V
IC = 64A
6
5
4 IC = 32A
3
2
1 IC = 16A
0
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
5 Page | ||
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| PDF Descargar | [ Datasheet IXGR32N90B2D1.PDF ] | |
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