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IXGX50N60B2D1 の電気的特性と機能

IXGX50N60B2D1のメーカーはIXYSです、この部品の機能は「IGBT ( Insulated Gate Bipolar Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IXGX50N60B2D1
部品説明 IGBT ( Insulated Gate Bipolar Transistor )
メーカ IXYS
ロゴ IXYS ロゴ 




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IXGX50N60B2D1 Datasheet, IXGX50N60B2D1 PDF,ピン配置, 機能
Advance Technical Data
HiPerFASTTM
IGBT with Diode
IXGK 50N60B2D1
IXGX 50N60B2D1
B2-Class High Speed IGBTs
V
CES
IC25
VCE(sat)
t
fi(typ)
= 600 V
= 75 A
= 2.0 V
= 65 ns
Symbol
Test Conditions
VCES
V
CGR
VGES
VGEM
TJ = 25°C to 150°C
T
J
=
25°C
to
150°C;
R
GE
=
1
M
Continuous
Transient
IC25 TC = 25°C (limited by leads)
IC110
TC = 110°C
IF110 TC = 110°C (50N60B2D1 Diode)
ICM TC = 25°C, 1 ms
SSOA
(RBSOA)
P
C
TJ
TJM
Tstg
Md
Weight
VGE = 15 V, TVJ = 125°C, RG = 10
Clamped inductive load @ VCE 600 V
T
C
= 25°C
Mounting torque, TO-264
TO-264
PLUS247
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Ratings
600 V
600 V
±20 V
±30 V
75 A
50 A
38 A
200 A
ICM = 80
A
400 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
1.13/10 Nm/lb.in.
10 g
6g
300 °C
Symbol
Test Conditions
V
GE(th)
I
CES
IGES
V
CE(sat)
I
C
=
250
µA,
V
CE
=
V
GE
V =V
CE CES
VGE = 0 V
VCE = 0 V, VGE = ±20 V
I = 40 A, V = 15 V
C GE
Note 1
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
3.0 5.0 V
T=
J
25°C
TJ = 125°C
600 µA
5 mA
±100 nA
TJ = 125°C
1.6 2.0
1.5
V
V
TO-264
(IXGK)
G
C
E
PLUS247
(IXGX)
(TAB)
G = Gate
E = Emitter
C
E
C = Collector
Tab = Collector
(TAB)
Features
High frequency IGBT and
anti-parallel FRED in one package
High current handling capability
MOS Gate turn-on for drive simplicity
Fast Recovery Epitaxial Diode (FRED)
with soft recovery and low IRM
Applications
Switch-mode and resonant-mode
power supplies
Uninterruptible power supplies (UPS)
DC choppers
AC motor speed control
DC servo and robot drives
Advantages
Space savings (two devices in one
package)
Easy to mount with 1 screw
© 2004 IXYS All rights reserved
DS99146A(03/04)

1 Page





IXGX50N60B2D1 pdf, ピン配列
Fig. 1. Output Characte ristics
@ 25 Deg. C
80
VGE = 15V
9V
70 13V
11V
60
7V
50
40
30
6V
20
10
0
0.5
5V
1 1.5 2
VC E - Volts
2.5
3
Fig. 3. Output Characteristics
@ 125 Deg. C
80
VGE = 15V
9V
70 13V
11V
60 7V
50
40 6V
30
20
10 5V
0
0.5 1 1.5 2 2.5 3
VCE - Volts
Fig. 5. Collector-to-Em itter Voltage
vs. Gate-to-Em itter voltage
3.7
TJ = 25ºC
3.4
3.1
IC = 80A
2.8 40A
20A
2.5
2.2
1.9
1.6
1.3
5 6 7 8 9 10 11 12 13 14 15 16 17
VG E - Volts
© 2004 IXYS All rights reserved
IXGK 50N60B2D1
IXGX 50N60B2D1
Fig. 2. Extended Output Characte ristics
@ 25 de g. C
320
VGE = 15V
11V
280 13V
240
200 9V
160
120
7V
80
40
5V
0
0 1 2 3 45 6 7 8
VC E - Volts
Fig. 4. De pende nce of VCE(sat) on
Tem perature
1.4
VGE = 15V
1.3
1.2 IC = 80A
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25
IC = 40A
IC = 20A
0 25 50 75 100 125 150
TJ - Degrees Centigrade
Fig. 6. Input Adm ittance
200
180
160
140
120
100
80
60 TJ = 125ºC
25ºC
40 -40ºC
20
0
4 4.5 5 5.5 6 6.5 7 7.5 8 8.5
VG E - Volts


3Pages


IXGX50N60B2D1 電子部品, 半導体
IXGK 50N60B2D1
IXGX 50N60B2D1
160
A
140
120
IF
100
80
60
TVJ= 25°C
TVJ=100°C
TVJ=150°C
40
20
0
0 1 2V
VF
Fig. 18. Forward current IF versus VF
2.0
1.5
Kf
1.0
0.5
IRM
Qr
4000
TVJ= 100°C
nC VR = 300V
3000
Qr
2000
IF=120A
IF= 60A
IF= 30A
1000
0
100 A/µs 1000
-diF/dt
Fig. 19. Reverse recovery charge Qr
versus -diF/dt
140
ns
130
trr
120
110
TVJ= 100°C
VR = 300V
IF=120A
IF= 60A
IF= 30A
100
90
0.0
0
40 80 120 °C 160
TVJ
Fig. 21. Dynamic parameters Qr, IRM
versus TVJ
1
K/W
0.1
ZthJC
0.01
80
0 200 400 600 A8/0µ0s 1000
-diF/dt
Fig. 22. Recovery time trr versus -diF/dt
80
TVJ= 100°C
A VR = 300V
60
IRM
40
IF=120A
IF= 60A
IF= 30A
20
0
0 200 400 600 A8/0µ0s 1000
-diF/dt
Fig. 20. Peak reverse current IRM
versus -diF/dt
20 1.6
V
VFR
15
tfr
µs
tfr
1.2
VFR
10 0.8
5 0.4
TVJ= 100°C
IF = 60A
0
0 200 400
0.0
600 A80/µ0s 1000
diF/dt
Fig. 23. Peak forward voltage VFR and
tfr
versus diF/dt
Constants for ZthJC calculation:
i
Rthi (K/W)
ti (s)
1 0.324
2 0.125
3 0.201
0.0052
0.0003
0.0385
Note: Fig. 18 through Fig. 23 show
typical values
0.001
0.0001
0.00001
0.0001
0.001
0.01
Fig. 24. Transient thermal resistance junction to case
0.1
DSEP 60-06A
s1
t
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more 4,850,072 4,931,844 5,034,796 5,063,307
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961
5,237,481 5,381,025
5,187,117 5,486,715
6,404,065B1 6,162,665 6,534,343 6,583,505
6,306,728B1 6,259,123B1 6,306,728B1 6,683,344

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部品番号部品説明メーカ
IXGX50N60B2D1

IGBT ( Insulated Gate Bipolar Transistor )

IXYS
IXYS


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