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IXGX50N60B2D1 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IXGX50N60B2D1
部品説明 IGBT
メーカ IXYS
ロゴ IXYS ロゴ 



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IXGX50N60B2D1 Datasheet, IXGX50N60B2D1 PDF,ピン配置, 機能
Advance Technical Data
HiPerFASTTM
IGBT with Diode
IXGK 50N60B2D1
IXGX 50N60B2D1
B2-Class High Speed IGBTs
V
CES
IC25
VCE(sat)
t
fi(typ)
= 600 V
= 75 A
= 2.0 V
= 65 ns
Symbol
Test Conditions
VCES
V
CGR
VGES
VGEM
TJ = 25°C to 150°C
T
J
=
25°C
to
150°C;
R
GE
=
1
M
Continuous
Transient
IC25 TC = 25°C (limited by leads)
IC110
TC = 110°C
IF110 TC = 110°C (50N60B2D1 Diode)
ICM TC = 25°C, 1 ms
SSOA
(RBSOA)
P
C
TJ
TJM
Tstg
Md
Weight
VGE = 15 V, TVJ = 125°C, RG = 10
Clamped inductive load @ VCE 600 V
T
C
= 25°C
Mounting torque, TO-264
TO-264
PLUS247
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Ratings
600 V
600 V
±20 V
±30 V
75 A
50 A
38 A
200 A
ICM = 80
A
400 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
1.13/10 Nm/lb.in.
10 g
6g
300 °C
Symbol
Test Conditions
V
GE(th)
I
CES
IGES
V
CE(sat)
I
C
=
250
µA,
V
CE
=
V
GE
V =V
CE CES
VGE = 0 V
VCE = 0 V, VGE = ±20 V
I = 40 A, V = 15 V
C GE
Note 1
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
3.0 5.0 V
T=
J
25°C
TJ = 125°C
600 µA
5 mA
±100 nA
TJ = 125°C
1.6 2.0
1.5
V
V
TO-264
(IXGK)
G
C
E
PLUS247
(IXGX)
(TAB)
G = Gate
E = Emitter
C
E
C = Collector
Tab = Collector
(TAB)
Features
High frequency IGBT and
anti-parallel FRED in one package
High current handling capability
MOS Gate turn-on for drive simplicity
Fast Recovery Epitaxial Diode (FRED)
with soft recovery and low IRM
Applications
Switch-mode and resonant-mode
power supplies
Uninterruptible power supplies (UPS)
DC choppers
AC motor speed control
DC servo and robot drives
Advantages
Space savings (two devices in one
package)
Easy to mount with 1 screw
© 2004 IXYS All rights reserved
DS99146A(03/04)

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