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PDF IXGK50N60B2D1 Data sheet ( Hoja de datos )
| Número de pieza | IXGK50N60B2D1 | |
| Descripción | IGBT | |
| Fabricantes | IXYS | |
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Advance Technical Data
HiPerFASTTM
IGBT with Diode
IXGK 50N60B2D1
IXGX 50N60B2D1
B2-Class High Speed IGBTs
V
CES
IC25
VCE(sat)
t
fi(typ)
= 600 V
= 75 A
= 2.0 V
= 65 ns
Symbol
Test Conditions
VCES
V
CGR
VGES
VGEM
TJ = 25°C to 150°C
T
J
=
25°C
to
150°C;
R
GE
=
1
MΩ
Continuous
Transient
IC25 TC = 25°C (limited by leads)
IC110
TC = 110°C
IF110 TC = 110°C (50N60B2D1 Diode)
ICM TC = 25°C, 1 ms
SSOA
(RBSOA)
P
C
TJ
TJM
Tstg
Md
Weight
VGE = 15 V, TVJ = 125°C, RG = 10 Ω
Clamped inductive load @ VCE ≤ 600 V
T
C
= 25°C
Mounting torque, TO-264
TO-264
PLUS247
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Ratings
600 V
600 V
±20 V
±30 V
75 A
50 A
38 A
200 A
ICM = 80
A
400 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
1.13/10 Nm/lb.in.
10 g
6g
300 °C
Symbol
Test Conditions
V
GE(th)
I
CES
IGES
V
CE(sat)
I
C
=
250
µA,
V
CE
=
V
GE
V =V
CE CES
VGE = 0 V
VCE = 0 V, VGE = ±20 V
I = 40 A, V = 15 V
C GE
Note 1
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
3.0 5.0 V
T=
J
25°C
TJ = 125°C
600 µA
5 mA
±100 nA
TJ = 125°C
1.6 2.0
1.5
V
V
TO-264
(IXGK)
G
C
E
PLUS247
(IXGX)
(TAB)
G = Gate
E = Emitter
C
E
C = Collector
Tab = Collector
(TAB)
Features
• High frequency IGBT and
anti-parallel FRED in one package
• High current handling capability
• MOS Gate turn-on for drive simplicity
• Fast Recovery Epitaxial Diode (FRED)
with soft recovery and low IRM
Applications
• Switch-mode and resonant-mode
power supplies
• Uninterruptible power supplies (UPS)
• DC choppers
• AC motor speed control
• DC servo and robot drives
Advantages
• Space savings (two devices in one
package)
• Easy to mount with 1 screw
© 2004 IXYS All rights reserved
DS99146A(03/04)
1 page  
IXGK 50N60B2D1
IXGX 50N60B2D1
Fig. 13. De pendence of Turn-Off
Sw itching Tim e on Te m perature
350
300
td(off)
tfi - - - - - -
RG = 5Ω
250
VGE = 15V
VCE = 480V
200
IC = 20A
IC = 40A
150 IC = 80A
100
50
0
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
90
80
70
60
50
40
30
20
10
0
100
Fig. 14. Reverse -Bias
Safe Operating Are a
TJ = 125º C
RG = 10Ω
dV/dT < 10V/ns
200 300 400 500
V C E - Volts
600
Fig. 15. Gate Charge
16
VCE = 300V
14 IC = 40A
IG = 10mA
12
10
10000
1000
Fig. 16. Capacitance
f = 1 MHz
Cies
8
6 100 Coes
4
2
0
0 30 60 90 120 150
Q G - nanoCoulombs
10
0
Cres
5 10 15 20 25 30 35 40
VC E - Volts
Fig. 17. Maxim um Transient Therm al Resistance
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
1
10
Pulse Width - milliseconds
100
1000
© 2004 IXYS All rights reserved
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet IXGK50N60B2D1.PDF ] | |
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