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IXGX120N60C2 の電気的特性と機能

IXGX120N60C2のメーカーはIXYSです、この部品の機能は「IGBT ( Insulated Gate Bipolar Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IXGX120N60C2
部品説明 IGBT ( Insulated Gate Bipolar Transistor )
メーカ IXYS
ロゴ IXYS ロゴ 




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IXGX120N60C2 Datasheet, IXGX120N60C2 PDF,ピン配置, 機能
Preliminary Technical Information
HiPerFASTTM IGBT IXGK120N60C2
Lightspeed 2TM Series
IXGX120N60C2
VCES = 600V
IC110 = 120A
VCE(sat) 2.5V
tfi(typ) = 80ns
Symbol
VCES
VCGR
VGES
VGEM
IC25
IC110
ICM
SSOA
(RBSOA)
PC
TJ
TJM
Tstg
Md
FC
TL
TSOLD
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1MΩ
Continuous
Transient
TC = 25°C (limited by leads)
TC = 110°C (chip capability)
TC = 25°C, 1ms
VGE = 15V, TVJ = 125°C, RG = 1Ω
Clamped inductive load @ VCE 600V
TC = 25°C
Mounting torque (TO-264)
Mounting force (PLUS247)
Maximum lead temperature for soldering
Plastic body for 10 seconds
TO-264
PLUS247
Maximum Ratings
600
600
± 20
± 30
75
120
500
ICM = 200
V
V
V
V
A
A
A
A
830
-55 ... +150
150
-55 ... +150
1.13 / 10
20..120/4.5..27
300
260
10
6
W
°C
°C
°C
Nm/lb.in
N/lb
°C
°C
g
g
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
BVCES
VGE(th)
IC = 1mA, VGE = 0V
IC = 500μA, VCE = VGE
ICES
VCE = VCES
VGE = 0V
TJ = 125°C
IGES VCE = 0V, VGE = ± 20V
VCE(sat)
IC = 100A, VGE = 15V, Note 1
TJ = 125°C
Characteristic Values
Min. Typ. Max.
600 V
3.0 5.5 V
100 μA
2 mA
± 200 nA
2.1 2.5 V
1.6 V
TO-264(IXGK)
G
CE
PLUS247(IXGX)
(TAB)
G
CE
(TAB)
G = Gate
C = Collector
E = Emitter TAB = Collector
Features
z Very high frequency IGBT
z Square RBSOA
z High current handling capability
z MOS Gate turn-on
- drive simplicity
Applications
z Uninterruptible power supplies (UPS)
z Switched-mode and resonant-mode
power supplies
z AC motor speed control
z DC servo and robot drives
z DC choppers
Advantages
z High power density
z Very fast switching speeds for high
frequency applications
z High power surface mountable
packages
© 2007 IXYS CORPORATION,All rights reserved
DS99515A(11/07)

1 Page





IXGX120N60C2 pdf, ピン配列
200
180
160
140
120
100
80
60
40
20
0
0
Fig. 1. Output Characteristics
@ 25ºC
VGE = 15V
13V
11V
9V
8V
7V
0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7
VCE - Volts
3
Fig. 3. Output Characteristics
@ 125ºC
200
180
VGE = 15V
13V
160 11V
140 9V
120
100 8V
80
60
40 7V
20
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6
VCE - Volts
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter Voltage
4.5
TJ = 25ºC
4.0
3.5
3.0
I C = 200A
2.5
100A
2.0
50A
1.5
7 8 9 10 11 12 13 14 15
VGE - Volts
IXGK120N60C2
IXGX120N60C2
350
300
250
200
150
100
50
0
0
Fig. 2. Extended Output Characteristics
@ 25ºC
VGE = 15V
13V
11V
9V
8V
7V
1 2 3 4 5 6 7 8 9 10
VCE - Volts
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-50
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
VGE = 15V
I C = 200A
I C = 100A
I C = 50A
-25 0
25 50 75 100 125 150
TJ - Degrees Centigrade
Fig. 6. Input Admittance
140
120
TJ = 125ºC
100 25ºC
- 40ºC
80
60
40
20
0
4.5 5 5.5 6 6.5 7 7.5 8 8.5 9
VGE - Volts
© 2007 IXYS CORPORATION,All rights reserved


3Pages


IXGX120N60C2 電子部品, 半導体
Fig. 18. Inductive Turn-on
Switching Times vs. Gate Resistance
180
t r td(on) - - - -
160 TJ = 125ºC, VGE = 15V
140
VCE = 400V
I C = 120A
100
90
80
120 70
100
I C = 80A
60
80 50
60 40
40 30
1 2 3 4 5 6 7 8 9 10
RG - Ohms
Fig. 20. Inductive Turn-on
Switching Times vs. Junction Temperature
120 50
110 48
100
tr
td(on) - - - -
90 RG = 1Ω , VGE = 15V
VCE = 400V
80
I C = 120A
46
44
42
70 40
60 38
I C = 80A
50 36
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
IXGK120N60C2
IXGX120N60C2
Fig. 19. Inductive Turn-on
Switching Times vs. Collector Current
120
52
110 t r
td(on) - - - -
100
90
RG = 1Ω , VGE = 15V
VCE = 400V
50
48
46
80 44
70 TJ = 25ºC
60
42
40
50 38
40
TJ = 125ºC
36
30 34
20 32
40 50 60 70 80 90 100 110 120
IC - Amperes
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS REF: G_120N60C2(9D)11-06-07

6 Page



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部品番号部品説明メーカ
IXGX120N60C2

IGBT ( Insulated Gate Bipolar Transistor )

IXYS
IXYS


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