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IXGY2N120 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IXGY2N120
部品説明 High Voltage IGBT
メーカ IXYS
ロゴ IXYS ロゴ 



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IXGY2N120 Datasheet, IXGY2N120 PDF,ピン配置, 機能
Preliminary Data Sheet
High Voltage IGBT
IXGY 2N120
VCES
1200 V
IC90
2.0 A
VCE(SAT)
3V
Symbol
VCES
VCGR
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 M
VGES
VGEM
IC25
IC90
ICM
SSOA
(RBSOA)
Continuous
Transient
TC = 25°C
TC = 90°C
TC = 25°C, 1 ms
VGE = 15 V, TJ = 125°C, RG = 150
Clamped inductive load
PC
TJ
TJM
TSTG
Weight
TC = 25°C
Max. Lead Temperature for
Soldering (1.6mm from case for 10s)
Maximum Ratings
1200
V
1200
V
±20 V
±30 V
5
2
8
ICM = 6
@ 0.8 VCES
25
-55 ... +150
150
-55 ... +150
0.8
300
A
A
A
A
W
°C
°C
°C
g
°C
TO-252 AA (IXGY)
G
E
G = Gate
E = Emitter
C (TAB)
C = Collector
TAB = Collector
Features
International standard package
Low VCE(sat)
- for low on-state conduction losses
High current handling capability
MOS Gate turn-on
- drive simplicity
Applications
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
Characteristic Values
Min. Typ. Max.
BVCES
VGE(th)
ICES
IGES
VCE(sat)
IC = 25µA, VGE = 0 V
IC = 25µA, VCE = VGE
VCE = 0.8 VCES
VGE = 0 V
VCE = 0 V, VGE = ±20 V
IC = IC90, VGE = 15 V
IC = IC25, VGE = 15 V
1200
2.5
TJ = 25°C
TJ = 125°C
2.5
3.8
V
5.0 V
10 µA
200 µA
± 50 nA
3.0 V
4.5 V
IC = IC25, T = 125oC
4.5 V
Capacitor discharge
Anode triggering of thyristors
DC choppers
Switched-mode and resonant-mode
power supplies.
© 2002 IXYS All rights reserved
DS 98959 (10/02)

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