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IXLF19N250A PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IXLF19N250A
部品説明 High Voltage IGBT
メーカ IXYS
ロゴ IXYS ロゴ 



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IXLF19N250A Datasheet, IXLF19N250A PDF,ピン配置, 機能
High Voltage IGBT
in High Voltage
ISOPLUS i4-PACTM
IXLF 19N250A
IC25 = 32 A
VCES = 2500 V
VCE(sat) = 3.2 V
tf = 250 ns
5
IGBT
Symbol
VCES
VGES
IC25
IC90
ICM
VCEK
Ptot
Symbol
VCE(sat)
VGE(th)
ICES
IGES
td(on)
tr
td(off)
tf
Eon
Eoff
Cies
Coes
Cres
QGon
RthJC
1
1
2
5
2
Conditions
TVJ = 25°C to 150°C
TC = 25°C
TC = 90°C
VGE = ±15 V; RG = 47 ; TVJ = 125°C
RBSOA, Clamped inductive load; L = 100 µH
TC = 25°C
Maximum Ratings
2500
V
± 20 V
32 A
19 A
70
1200
A
V
250 W
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
IC = 19 A; VGE = 15 V; TVJ = 25°C
TVJ = 125°C
IC = 1 mA; VGE = VCE
VCE = VCES; VGE = 0 V; TVJ = 25°C
TVJ = 125°C
VCE = 0 V; VGE = ± 20 V
Inductive load, TVJ = 125°C
VCE = 1500 V; IC = 19 A
VGE = ±15 V; RG = 47
3.2 3.9 V
4.7 V
5 8V
0.15 mA
0.2 mA
500 nA
100 ns
50 ns
600 ns
250 ns
15 mJ
30 mJ
VCE = 25 V; VGE = 0 V; f = 1 MHz
VCE = 1500V; VGE = 15 V; IC = 19 A
2.28 nF
103 pF
43 pF
142 nC
0.5 K/W
Features
High Voltage IGBT
- substitute for high voltage MOSFETs
with significantly lower voltage drop
and comparable switching speed
- substitute for high voltage thyristors
with voltage control of turn on & turn off
- substitute for electromechanical trigger
and discharge relays
ISOPLUS i4-PACTM
high voltage package
- isolated back surface
- enlarged creepage towards heatsink
- enlarged creepage between high
voltage pins
- application friendly pinout
- high reliability
- industry standard outline
- UL registered E72873
Applications
switched mode power supplies
DC-DC converters
resonant converters
laser generators, x ray generators
discharge circuits
IXYS reserves the right to change limits, test conditions and dimensions.
© 2005 IXYS All rights reserved
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