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IXLF19N250A の電気的特性と機能

IXLF19N250AのメーカーはIXYSです、この部品の機能は「High Voltage IGBT」です。


製品の詳細 ( Datasheet PDF )

部品番号 IXLF19N250A
部品説明 High Voltage IGBT
メーカ IXYS
ロゴ IXYS ロゴ 




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IXLF19N250A Datasheet, IXLF19N250A PDF,ピン配置, 機能
High Voltage IGBT
in High Voltage
ISOPLUS i4-PACTM
IXLF 19N250A
IC25 = 32 A
VCES = 2500 V
VCE(sat) = 3.2 V
tf = 250 ns
5
IGBT
Symbol
VCES
VGES
IC25
IC90
ICM
VCEK
Ptot
Symbol
VCE(sat)
VGE(th)
ICES
IGES
td(on)
tr
td(off)
tf
Eon
Eoff
Cies
Coes
Cres
QGon
RthJC
1
1
2
5
2
Conditions
TVJ = 25°C to 150°C
TC = 25°C
TC = 90°C
VGE = ±15 V; RG = 47 ; TVJ = 125°C
RBSOA, Clamped inductive load; L = 100 µH
TC = 25°C
Maximum Ratings
2500
V
± 20 V
32 A
19 A
70
1200
A
V
250 W
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
IC = 19 A; VGE = 15 V; TVJ = 25°C
TVJ = 125°C
IC = 1 mA; VGE = VCE
VCE = VCES; VGE = 0 V; TVJ = 25°C
TVJ = 125°C
VCE = 0 V; VGE = ± 20 V
Inductive load, TVJ = 125°C
VCE = 1500 V; IC = 19 A
VGE = ±15 V; RG = 47
3.2 3.9 V
4.7 V
5 8V
0.15 mA
0.2 mA
500 nA
100 ns
50 ns
600 ns
250 ns
15 mJ
30 mJ
VCE = 25 V; VGE = 0 V; f = 1 MHz
VCE = 1500V; VGE = 15 V; IC = 19 A
2.28 nF
103 pF
43 pF
142 nC
0.5 K/W
Features
High Voltage IGBT
- substitute for high voltage MOSFETs
with significantly lower voltage drop
and comparable switching speed
- substitute for high voltage thyristors
with voltage control of turn on & turn off
- substitute for electromechanical trigger
and discharge relays
ISOPLUS i4-PACTM
high voltage package
- isolated back surface
- enlarged creepage towards heatsink
- enlarged creepage between high
voltage pins
- application friendly pinout
- high reliability
- industry standard outline
- UL registered E72873
Applications
switched mode power supplies
DC-DC converters
resonant converters
laser generators, x ray generators
discharge circuits
IXYS reserves the right to change limits, test conditions and dimensions.
© 2005 IXYS All rights reserved
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IXLF19N250A pdf, ピン配列
100
A
80
IC
TJ = 25°C
60
VGE = 17 V
15 V
13 V
40
11 V
20
9V
0
0 1 2 3 4 5 6 7 8 9V
VCE
Fig. 1 Typ. Output Characteristics
80
VCE = 20 V
7A0
60
IC
50
40
30
TJ = 125°C
20
10
TJ = 25°C
0
6 7 8 9 10 11 12 13 14 V 15
VGE
Fig. 3 Typ. Transfer Characteristics
IXLF 19N250A
50
A TJ = 125°C
IC 40
30
VGE = 17 V
15 V
13 V
11 V
20
10 9 V
0
0 1 2 3 4 5 6 7 8 9V
VCE
Fig. 2 Typ. Output Characteristics
10000
pF
f = 1 Mhz
1000
Cies
100
Coes
10
0
10 20 30
VCE
Fig. 4 Capacitance curves
Cres
V 40
20
V
15
VGE
10
5
VCE = 1500 V
IC = 19 A
TJ = 25°C
80
A
ICM 60
40
20
RG = 47
TJ = 125°C
VCEK < VCES
0
0 50 100 150 nC
QG
Fig. 5 Typ. Gate Charge characteristics
IXYS reserves the right to change limits, test conditions and dimensions.
© 2005 IXYS All rights reserved
0
0 400 800 1200 1600 2000 2400 V
VCE
Fig. 6 Reverse Biased Safe Operating Area
RBSOA
3-4


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部品番号部品説明メーカ
IXLF19N250A

High Voltage IGBT

IXYS
IXYS


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