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IXDN55N120D1 の電気的特性と機能

IXDN55N120D1のメーカーはIXYSです、この部品の機能は「High Voltage IGBT」です。


製品の詳細 ( Datasheet PDF )

部品番号 IXDN55N120D1
部品説明 High Voltage IGBT
メーカ IXYS
ロゴ IXYS ロゴ 




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IXDN55N120D1 Datasheet, IXDN55N120D1 PDF,ピン配置, 機能
IXDN 55N120 D1
High Voltage IGBT
with optional Diode
Short Circuit SOA Capability
Square RBSOA
VCES = 1200 V
IC25 = 100 A
V =CE(sat) typ 2.3 V
C miniBLOC, SOT-227 B
E153432
E
GG
Symbol
VCES
VCGR
VGES
VGEM
IC25
IC90
ICM
RBSOA
tSC
(SCSOA)
PC
VISOL
TJ
Tstg
Md
Weight
Symbol
V(BR)CES
VGE(th)
I
CES
I
GES
VCE(sat)
E
Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 20 kΩ
Continuous
Transient
TC = 25°C
TC = 90°C
TC = 90°C, tp = 1 ms
VGE = ±15 V, TJ = 125°C, RG = 22 Ω
Clamped inductive load, L = 30 µH
VGE = ±15 V, VCE = VCES, TJ = 125°C
RG = 22 Ω, non repetitive
TC = 25°C
IGBT
Diode
50/60 Hz; IISOL 1 mA
Mounting torque
Terminal connection torque (M4)
Maximum Ratings
1200
1200
V
V
±20 V
±30 V
100 A
62 A
124 A
ICM = 100
VCEK < VCES
10
A
µs
450 W
220 W
2500
V~
-40 ... +150
-40 ... +150
°C
°C
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
30 g
Conditions
Characteristic Values
(T = 25°C, unless otherwise specified)
J
min. typ. max.
VGE = 0 V
IC = 2 mA, VCE = VGE
V =V
CE CES
T = 25°C
J
TJ = 125°C
V = 0 V, V = ± 20 V
CE GE
IC = 55 A, VGE = 15 V
1200
V
4.5 6.5 V
3.8 mA
6 mA
± 500 nA
2.3 2.8 V
E
C
E = Emitter , C = Collector
G = Gate,
E = Emitter
Either Emitter terminal can be used as
Main or Kelvin Emitter
Features
NPT IGBT technology
low saturation voltage
low switching losses
square RBSOA, no latch up
high short circuit capability
positive temperature coefficient for
easy paralleling
MOS input, voltage controlled
optional ultra fast diode
International standard package
miniBLOC
Advantages
Space savings
Easy to mount with 2 screws
High power density
Typical Applications
AC motor speed control
DC servo and robot drives
DC choppers
Uninteruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
© 2002 IXYS All rights reserved
1-4

1 Page





IXDN55N120D1 pdf, ピン配列
120
A TJ = 25°C
100
IC
80
60
VGE=17V
15V
13V
11V
40
9V
20
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 V
VCE
Fig. 1 Typ. output characteristics
120
A
100
VCE = 20V
TJ = 25°C
IC 80
60
40
20
0
56
Fig. 3
7 8 9 10 11 V
VGE
Typ. transfer characteristics
20
V
VGE 15
VCE = 600V
IC = 50A
10
5
0
0 50 100 150 200 250 nC
QG
Fig. 5 Typ. turn on gate charge
© 2002 IXYS All rights reserved
IXDN 55N120 D1
120
A TJ = 125°C
100
IC
80
60
VGE=17V
15V
13V
11V
40 9V
20
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 V
VCE
Fig. 2 Typ. output characteristics
180
1A50
IF 120
TJ = 125°C
TJ = 25°C
90
60
30
0
0 1 2 3 V4
VF
Fig. 4 Typ. forward characteristics of
free wheeling diode
120
A
IRM
80
trr
300
ns
trr
200
40
IRM
TJ = 125°C
VR = 600V
IF = 50A
100
0 0IXDN55N120
0 200 400 600 8A00/μs 1000
-di/dt
Fig. 6 Typ. turn off characteristics of
free wheeling diode
3-4


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部品番号部品説明メーカ
IXDN55N120D1

High Voltage IGBT

IXYS
IXYS


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