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Número de pieza | IXGN400N30A3 | |
Descripción | 300V IGBT | |
Fabricantes | IXYS | |
Logotipo | ||
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No Preview Available ! GenX3TM 300V IGBT
IXGN400N30A3
Ultra-Low-Vsat PT IGBT for
up to 10kHz Switching
Symbol
VCES
VCGR
VGES
VGEM
IC25
IC110
ILRMS
ICM
SSOA
(RBSOA)
PC
TJ
TJM
Tstg
VISOL
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1MΩ
Continuous
Transient
TC = 25°C (Chip Capability)
TC = 110°C
Terminal Current Limit
TC = 25°C, 1ms
VGE= 15V, TVJ = 125°C, RG = 1Ω
Clamped Inductive Load
TC = 25°C
50/60Hz
t = 1min
IISOL ≤ 1mA
t = 1s
Mounting Torque
Terminal Connection Torque (M4)
E
Maximum Ratings
300 V
300 V
±20 V
±30 V
400
200
200
1200
A
A
A
A
ICM = 400
@ 0.8 • VCES
735
A
V
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
2500
3000
V~
V~
1.5/13
1.3/11.5
Nm/lb.in.
Nm/lb.in.
30 g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVCES
IC = 1mA, VGE = 0V
VGE(th)
IC = 4mA, VCE = VGE
ICES VCE = VCES, VGE = 0V
IGES VCE = 0V, VGE = ±20V
TJ = 125°C
VCE(sat)
IC = 100A, VGE = 15V, Note 1
IC = 400A
Characteristic Values
Min. Typ. Max.
300 V
3.0 5.0 V
50 μA
2 mA
±400 nA
1.15 V
1.70 V
VCES =
IC25 =
VCE(sat) ≤
300V
400A
1.15V
SOT-227B, miniBLOC
E153432
Ec
G
Ec
C
G = Gate, C = Collector, E = Emitter
cEither Emitter Terminal Can Be Used
as Main or Kelvin Emitter
Features
z Optimized for Low Conduction Losses
z High Current Capability
z International Standard Package
z miniBLOC, with Aluminium Nitride
Isolation
Advantages
z High Power Density
z Low Gate Drive Requirement
Applications
z Power Inverters
z UPS
z Motor Drives
z SMPS
z PFC Circuits
z Battery Chargers
z Welding Machines
z Lamp Ballasts
z Inrush Current Protection Circuits
© 2009 IXYS CORPORATION, All Rights Reserved
DS99592B(7/09)
1 page IXGN400N30A3
Fig. 11. Resistive Turn-on Rise Time
vs. Junction Temperature
56
54
RG = 1Ω , VGE = 15V
VCE = 240V
I C = 300A, 200A, 100A
52
50
48
46
44
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
130
120
110
100
90
80
70
60
50
40
30
1
Fig. 13. Resistive Turn-on Switching Times
vs. Gate Resistance
t r td(on) - - - -
TJ = 125ºC, VGE = 15V
VCE = 240V
I C = 200A, 100A
23456789
RG - Ohms
80
76
72
68
64
60
56
52
48
44
40
10
380
360
340
320
300
280
260
240
220
200
180
1
Fig. 15. Resistive Turn-off Switching Times
vs. Gate Resistance
t f td(off) - - - -
TJ = 125ºC, VGE = 15V
VCE = 240V
I C = 200A, 300A
I C = 100A
23456789
RG - Ohms
1100
1000
900
800
700
600
500
400
300
200
100
10
Fig. 12. Resistive Turn-on Rise Time
vs. Collector Current
56
54
52 RG = 1Ω , VGE = 15V
VCE = 240V
50
TJ = 125ºC
48
TJ = 25ºC
46
44
100 120 140 160 180 200 220 240 260 280 300
IC - Amperes
Fig. 14. Resistive Turn-off Switching Times
vs. Junction Temperature
400
t f td(off) - - - -
350 RG = 1Ω, VGE = 15V
300 VCE = 240V
250
240
230
250
200 I C = 300A, 200A, 100A
220
210
150 200
100 190
50 180
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 16. Resistive Turn-off Switching Times
vs. Collector Current
350 240
300
t f td(off) - - - -
230
RG = 1Ω, VGE = 15V
VCE = 240V
250 220
TJ = 125ºC
200
210
150
TJ = 25ºC
100
200
190
50 180
100 120 140 160 180 200 220 240 260 280 300
IC - Amperes
© 2009 IXYS CORPORATION, All Rights Reserved
IXYS REF: G_400N30A3(96)11-18-08-A
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet IXGN400N30A3.PDF ] |
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