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IXGN80N60A2 の電気的特性と機能

IXGN80N60A2のメーカーはIXYSです、この部品の機能は「IGBT ( Insulated Gate Bipolar Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IXGN80N60A2
部品説明 IGBT ( Insulated Gate Bipolar Transistor )
メーカ IXYS
ロゴ IXYS ロゴ 




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IXGN80N60A2 Datasheet, IXGN80N60A2 PDF,ピン配置, 機能
Advanced Technical Data
IGBT
Optimized for Switching
up to 5 kHz
IXGN 80N60A2
IXGN 80N60A2D1
VCES =
IC25 =
VCE(sat) =
600 V
160 A
1.35 V
Symbol
Test Conditions
VCES
VCGR
TJ
TJ
VGES
VGEM
IC25
IC110
IF110
ICM
SSOA
(RBSOA)
= 25°C to 150°C
= 25°C to 150°C; RGE = 1 M
Continuous
Transient
TC = 25°C
TC = 110°C
TC = 110°C
TC = 25°C, 1 ms
IXGN80N60A2D1
VGE = 15 V, TVJ = 125°C, RG = 2.0
Clamped inductive load
PC
TJ
TJM
Tstg
VISOL
Md
TC = 25°C
50/60 Hz
IISOL 1 mA
t = 1 min
t=1s
Mounting torque
Terminal connection torque (M4)
Weight
E D1
Maximum Ratings
600 V
600 V
±20 V
±30 V
160 A
80 A
60 A
320 A
ICM = 160
@ 0.8 VCES
625
A
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
2500
3000
V~
V~
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
30 g
Symbol
VGE(th)
ICES
IGES
VCE(sat)
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IC = 1 mA, VCE = VGE
VCE = VCES, VGE = 0 V
Note 3
80N60A2
80N60A2D1
VCE = 0 V, VGE = ±20 V
IC = IC110, VGE = 15 V, Note 1
2.5 5.5
25
650
±400
1.2 1.35
V
µA
µA
nA
V
SOT-227B, miniBLOC
E153432 E
G
E
C
G = Gate, C = Collector, E = Emitter
either emitter terminal can be used as
Main or Kelvin Emitter
Features
International standard package
miniBLOC
UL recognized
Aluminium nitride isolation
- high power dissipation
Isolation voltage 3000 V~
Very high current IGBT
Low VCE(sat) for minimum on-state
conduction losses
MOS Gate turn-on
- drive simplicity
Low collector-to-case capacitance
(< 50 pF)
Low package inductance (< 5 nH)
- easy to drive and to protect
Applications
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
Advantages
Easy to mount with 2 screws
Space savings
High power density
© 2004 IXYS All rights reserved
DS99180(05/04)

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部品番号部品説明メーカ
IXGN80N60A2

IGBT ( Insulated Gate Bipolar Transistor )

IXYS
IXYS
IXGN80N60A2D1

IGBT ( Insulated Gate Bipolar Transistor )

IXYS
IXYS


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