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IXSH45N120 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IXSH45N120
部品説明 High Voltage IGBT
メーカ IXYS
ロゴ IXYS ロゴ 



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IXSH45N120 Datasheet, IXSH45N120 PDF,ピン配置, 機能
High Voltage,
Low VCE(sat) IGBT
Short Circuit SOA Capability
IXSH 45N120
VCES
IC25
VCE(sat)
= 1200 V
= 75 A
= 3V
Symbol
Test Conditions
V
CES
VCGR
VGES
VGEM
IC25
I
C90
ICM
SSOA
(RBSOA)
T
J
= 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 MW
Continuous
Transient
TC = 25°C, limited by leads
T
C
= 90°C
TC = 25°C, 1 ms
VGE= 15 V, TJ = 125°C, RG = 2.7 W
Clamped inductive load, L = 30 mH
tSC
(SCSOA)
PC
TJ
TJM
Tstg
M
d
Weight
VGE= 15 V, VCE = 0.6 • VCES, TJ = 125°C
RG = 22 W, non repetitive
TC = 25°C
Mounting torque
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Ratings
1200
1200
±20
±30
75
45
180
ICM = 90
@ 0.8 V
CES
10
V
V
V
V
A
A
A
A
ms
300 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
1.13/10 Nm/lb.in.
6g
300 °C
Symbol
BV
CES
VGE(th)
ICES
I
GES
VCE(sat)
Test Conditions
I = 3 mA, V = 0 V
C GE
IC = 4 mA, VCE = VGE
VCE = 0.8 • VCES
VGE = 0 V
V
CE
=
0
V,
V
GE
=
±20
V
IC = IC90, VGE = 15 V
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
1200
4
6
V
8V
TJ = 25°C
TJ = 125°C
400 mA
1.2 mA
±100 nA
3V
TO-247 AD
G
C
E
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Features
q International standard package
JEDEC TO-247
q High frequency IGBT with guaranteed
Short Circuit SOA capability
q Fast Fall Time for switching speeds
up to 20 kHz
q 2nd generation HDMOSTM process
q Low V
CE(sat)
- for minimum on-state conduction
losses
q MOS Gate turn-on
- drive simplicity
Applications
q AC motor speed control
q DC servo and robot drive
q Uninterruptible power supplies (UPS)
q Switch-mode and resonant-mode
power supplies
q Welding
Advantages
q Easy to mount with 1 screw
(isolated mounting screw hole)
q High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
92773F (7/00)
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