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PDF IXGP20N120BD1 Data sheet ( Hoja de datos )
| Número de pieza | IXGP20N120BD1 | |
| Descripción | High Voltage IGBT | |
| Fabricantes | IXYS | |
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High Voltage IGBT with Diode
IXGP 20N120B
IXGP 20N120BD1
Preliminary Data Sheet
VCES
IC25
VCE(sat)
tfi(typ)
= 1200 V
= 40 A
= 3.4 V
= 160 ns
Symbol
Test Conditions
VCES
VCGR
VGES
VGEM
IC25
IC110
ICM
SSOA
(RBSOA)
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 MΩ
Continuous
Transient
TC = 25°C
TC = 110°C
TC = 25°C, 1 ms
VGE = 15 V, TJ = 125°C, RG = 10 Ω
Clamped inductive load
PC TC = 25°C
TJ
TJM
Tstg
Md Mounting torque (M3.5 screw)
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum tab temperature
soldering SMD devices for 10s
Weight
D1
Maximum Ratings
1200
1200
V
V
±20 V
±30 V
40 A
20 A
100 A
ICM = 40
@0.8 VCES
190
A
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
0.55/5 Nm/lb.in.
300 °C
260 °C
4g
TO-220 (IXGP)
GC E
C (TAB)
G = Gate
E = Emitter
C = Collector
TAB = Collector
Features
z International standard package
z IGBT and anti-parallel FRED for
resonant power supplies
- Induction heating
- Rice cookers
z MOS Gate turn-on
- drive simplicity
z Fast Recovery Expitaxial Diode (FRED)
- soft recovery with low IRM
Advantages
z Saves space (two devices in one
package)
z Easy to mount with 1 screw
z Reduces assembly time and cost
Symbol
VGE(th)
ICES
IGES
VCE(sat)
Test Conditions
IC = 250 µA, VCE = VGE
VCE = VCES
VGE = 0 V
VCE = 0 V, VGE = ±20 V
IC = 20A, VGE = 15 V
Note 2
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
20N120B
20N120BD1
2.5
5.0 V
50 µA
150 µA
TJ=125°C
±100 nA
2.9 3.4 V
2.8 V
© 2003 IXYS All rights reserved
DS99138(12/03)
1 page  
30
A
25
IF 20
15
10
5
TVJ=150°C
TVJ=100°C
TVJ= 25°C
1.4
nC
1.2
TVJ= 100°C
VR = 300V
Qr 1.0
0.8
0.6
IF= 20A
IF= 10A
IF= 5A
0.4
0.2
IXGP 20N120B
IXGP 20N120BD1
40 TVJ= 100°C
A VR = 300V
IRM 30
20
IIIFFF===
20A
10A
5A
10
0
0.0 0.5 1.0 1.5 2.0 V 2.5
VF
Fig. 13. Forward current IF versus VF
2.0
1.5
Kf
1.0
IRM
0.0
100 A/µs 1000
-diF/dt
Fig. 14. Reverse recovery charge Qr
versus -diF/dt
120
ns
110
trr
100
90
TVJ= 100°C
VR = 300V
IF= 20A
IF= 10A
IF= 5A
0
0 200 400 600 A8/0µ0s 1000
-diF/dt
Fig. 15. Peak reverse current IRM
versus -diF/dt
20 1.2
V
VFR
15
tfr
VFR µs
0.9
tfr
10 0.6
0.5
Qr
0.0
0
40 80 120 °C 160
TVJ
Fig. 16.
Dynamic parameters
versus TVJ
Qr,
IRM
80
70
0 200 400 600 A8/0µ0s 1000
-diF/dt
Fig. 17. Recovery time trr versus -diF/dt
5 0.3
TVJ= 100°C
IF = 10A
0 0.0
0 200 400 600 A80/µ0s 1000
diF/dt
Fig. 18
Peak forward
tf versus diF/dt
voltage
VFR
and
10
K/W
1
ZthJC
0.1
Constants for ZthJC calculation:
i
Rthi (K/W)
ti (s)
1 1.449
0.0052
2
0.5578
0.0003
3
0.4931
0.0169
0.01
0.001
0.00001
0.0001
0.001
0.01
Fig. 19. Transient thermal resistance junction to case
NOTE: Fig. 2 to Fig. 6 shows typical values
© 2003 IXYS All rights reserved
DSEP 8-06A/DSEC16-06A
0.1 s
t
1
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